The HMC345ALP3E is a broadband non-reflective GaAs MESFET SP4T switch in a low cost leadless surface mount packages. Covering DC to 8 GHz, this switch offers high isolation and low insertion loss. This switch also includes an on board binary decoder circuit which reduces the required logic control lines to two. The switch operates using a positive control voltage of 0/+5V, and requires a fixed bias of +5V.* Blocking capacitors are required at ports RFC and RF1, 2, 3, & 4. Their value will determine the lowest transmission frequency.APPLICATIONSThis switch is suitable for usage in DC - 8.0 GHz 50-Ohm or 75-Ohm systems: Broadband Fiber Optics Switched Filter Banks Wireless below 8 GHz

The HMC3716LP4E is a digital phase frequency detector which operates from 10 to 1300MHz. It is intended for usein low phase noise synthesizer applications.The combination of high frequency of operation along with its ultra low phase noise floor make possible synthesizerswith wide loop bandwidth and low N resulting in fast switching and very low phase noise. When used in conjunctionwith a differential loop amplifier, the HMC3716LP4E generates output voltages that can be used to phase lock a VCOto a reference oscillator.The device is packaged in a 24-pin, 4 x 4mm leadless QFN surface mount package with an exposed ground paddlefor improved RF and thermal performance.Applications Point-to-point radios Satellite communication systems Military applications Sonet clock generation

The HMC539ALP3/539ALP3E is a broadband5-bit GaAs IC digital attenuator in a low cost leadless surface mount package. This single positive control line per bit digital attenuator utilizes an offchip AC ground capacitor for near DC operation,making it suitable for a wide variety of RF and IFapplications. Covering DC to 4 GHz, the insertion loss is less than 0.7 dB typical. The attenuatorbit values are 0.25 (LSB), 0.5, 1, 2, and 4 dB for atotal attenuation of 7.75 dB. Attenuation accuracy isexcellent at ? 0.05 dB typical step error. The attenu-ator also features a high IIP3 of +62 dBm. Five TTL/CMOS control inputs are used to select each attenuation state. A single Vdd bias of +3V to +5V is required.Applications Cellular infrastructure ISM, MMDS, WLAN, WiMAX, WiBro Microwave radio and VSAT Test equipment and sensors

The HMC540SLP3E is a broadband 4-bit Silicon IC digital attenuator in a low cost leadless surface mount package. This single positive control line per bit digital attenuator utilizes off chip AC ground capacitors for near DC operation, making it suitable for a wide variety of RF and IF applications. Covering 0.1 to 8 GHz, the insertion loss is less than 1 dB typical. The attenuator bit values are 1 (LSB), 2, 4 and 8 dB for a total attenuation of 15 dB. Attenuation accuracy is excellent at ? 0.2 dB typical step error. The attenuator also features a IIP3 of +56dBm. Four TTL/CMOS control inputs are used to select each attenuation state. It can operate with a single Vdd ranging from +3.3V to 5V.APPLICATIONS Cellular Infrastructure ISM, MMDS, WLAN, WiMAX, WiBro Microwave Radio & VSAT Test Equipment and Sensors

The HMC574AMS8E is low-cost SPDT switchin 8-lead MSOP packages for use in transmit/receive applications which requires very lowdistortion at high incident power levels. Thedevice can control signals from DC to 3 GHz andis especially suited for Cellular/3G infrastructure,WiMAX and WiBro applications with only 0.3 dBtypical insertion loss. The design provides 5 wattpower handling performance and +63 dBm thirdorder intercept at +8 Volt bias. RF1 and RF2 arereflective shorts when ?Off.?Applications Cellular/3G infrastructure Private mobile radio handsets WLAN, WiMAX and WiBro Automotive telematics Test equipment

The HMC618ALP3E is a GaAs pHEMT MMIC Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 1.2 - 2.2 GHz. The amplifier has been optimized to provide 0.75 dB noise figure, 19 dB gain and +36 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC618ALP3E shares the same package and pinout with the HMC617LP3E 0.55 - 1.2 GHz LNA. The HMC618ALP3E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. The HMC618ALP3E offers improved noise figure versus the previously released HMC375LP3(E) and the HMC382LP3(E).Applications Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femto Cells Public Safety Radio

The HMC641ALC4 is a broadband non-reflective GaAs pHEMT SP4T switch in a compact 4x4 mm ceramic package. Covering DC to 20 GHz, this switch offers high isolation, low insertion loss and on-chip termination of isolated ports. This switch also includes an on board binary decoder circuit which reduces the number of required logic control lines from four to two. The HMC641ALC4 is controlled with 0/ -5V logic, exhibits fast switching speed and consumes much less DC current than pin diode based solutions.APPLICATIONS Telecom Infrastructure Microwave Radio & VSAT Military & Space Hybrids Test Instrumentation SATCOM & Sensors

The HMC7357 is a three-stage GaAs pHEMT MMIC Medium Power Amplifier that operates between 5.5 and 8.5 GHz. The amplifier provides 29 dB of gain and +35 dBm of saturated output power at 34% PAE from a +8V supply. With an excellent Output IP3 of +41.5 dBm, the HMC7357 is ideal for linear applications such as high capacity point-to-point and point-to-multi-point radios or VSAT/SATCOM applications demanding +35 dBm of efficient saturated output power. The RF I/Os are internally matched to 50 Ohms for ease of use. The HMC7357 is packaged in a leadless 5x5 mm plastic surface mount package and is compatible with surface mount manufacturing techniques.Applications Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM

The HMC7885 is a 32 W gallium nitride (GaN), monolithicmicrowave integrated circuit (MMIC) power amplifier (PA)module that operates between 2 GHz and 6 GHz, and is providedin an 18-lead hermetically sealed module. The amplifier typicallyprovides 21 dB of small signal gain and 45 dBm of saturated radiofrequency (RF) output power. The amplifier draws 2200 mA ofquiescent current (IDD) from a 28 V dc supply. The RF input andoutput are dc blocked and matched to 50 ? for ease of use.Applications Test and measurement equipment Communications Electronic warfare (EW) Military Traveling wave tube (TWT) replacements SATCOM Commercial and military radars

The HMC797APM5E is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between DC and 22 GHz. The amplifier provides 15 dB of gain, +29 dBm of output power at 1 dB gain compression, +31 dBm of saturated output power, and 25% PAE while requiring 400 mA from a +10 V supply. With up to +41 dBm of output IP3, the HMC797APM5E is ideal for high linearity applications in military and space as well as test equipment where high order modulations are used. This versatile PA exhibits a positive gain slope from 2 to 20 GHz making it ideal for EW, ECM, Radar and test equipment applications. The HMC797APM5E amplifier I/Os are internally matched to 50 ? facilitating integration into mutli-chip-modules (MCMs), is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.Applications Test Instrumentation Military & Space Fiber Optics