The LT1939 is a current mode PWM step-down DC/DC converter with an internal 2.3A switch. The wide input range of 3V to 25V makes the LT1939 suitable for regulating power from a wide variety of sources, including automotive batteries, industrial supplies and unregulated wall adapters.Resistor-programmable 250kHz to 2.2MHz frequency range and synchronization capability enable optimization between efficiency and external component size. Cycle-by-cycle current limit, frequency foldback and thermal shutdown provide protection against a shorted output. The soft-start feature controls the ramp rate of the output voltage, eliminating input current surge during start-up, and also provides output tracking.The LT1939 contains an internal NPN transistor with feedback control which can be con?gured as a linear regulator or as a linear regulator controller.The LT1939?s low current shutdown mode (<12?A) enables easy power management in battery-powered systems.Applications Automotive Battery Regulation Industrial Control Wall Transformer Regulation Distributed Power Regulation

The HMC596LP4(E) is a low-cost 4x2 switch matrix in a leadless QFN 4x4 mm surface mount package for use in Satellite/DBS, LNBs and multiswitches from 200 to 3000 MHz. A positive voltage controlled 4 bit decoder is integrated on the switch. The switches may be used in either 75 ohm or 50 ohm systems.Both switch outputs (OP1 & OP2) can independently select any of the four inputs (HH, HL, VH, VL) or simultaneously select the same inputs. Note that the switch is bi-directional and input/output functionality may be interchanged. All data presented was measured in a 50 ohm (input/output) system.APPLICATIONS DBS LNBs & Multiswitches Cable Modem/CATV Cellular Systems

The HMC326MS8G & HMC326MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers which operate between 3.0 and 4.5 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifier provides 21 dBof gain and +26 dBm of saturated power from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use. Internal circuit matching was optimized to provide greater than 40% PAE.Applications Microwave Radios Broadband Radio Systems Wireless Local Loop Driver Amplifier

The HMC414MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 2.2 and 2.8 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +30 dBm of saturated power at 32% PAE from a +5V supply voltage. The amplifier can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/ current control.Applications BLUETOOTH MMDS

The HMC385LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering 2.25 to 2.5 GHz, the VCO?s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator?s monolithic structure. Power output is 4.5 dBm typical from a single supply of 3V @ 35mA. The voltage controlled oscillator is packaged in a low cost leadless QFN 4x4 mm surface mount package.APPLICATIONS Wireless Infrastructure Industrial Controls Test Equipment Military

The HMC386LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with integrated resonator, negative resistance device, varactor diode, and buffer amplifiers. Covering 2.6 to 2.8 GHz, the VCO?s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator?s monolithic structure. Power output is 5 dBm typical from a single supply of 3V @ 35mA. The voltage controlled oscillator is packaged in a low cost leadless QFN 4x4 mm surface mount package.APPLICATIONS Wireless Infrastructure Industrial Controls Test Equipment Military

The HMC437MS8G(E) is a low noise Divide-by-3 Static Divider utilizing InGaP GaAs HBT technology in a low cost 8 lead surface mount plastic package. This device operates from DC (with a square wave input) to 7 GHz input frequency from a single +5V DC supply. The low additive SSB phase noise of -153 dBc/Hz at 100 kHz offset helps the user maintain good system noise performance.APPLICATIONS UNII, Point-to-Point & VSAT Radios 802.11a & HiperLAN WLAN Fiber Optic Cellular/3G Infrastructure

The HMC440QS16G(E) is an integer-n synthesizer that incorporates a 10 to 1300 MHz digital Phase-Frequency Detector with 10 to 2800 MHz 5-Bit frequency counter (continuous division from 2 to 32) in miniature 16 lead QSOP plastic packages. It is intended for use in low phase noise offset-synthesizer app-lications.The HMC440QS16G(E) combines high frequency operation along with ultra low phase noise floor making possible synthesizers with wide loop bandwidth and low N resulting in fast settling and very low phase noise. When used in conjunction with a differential loop amplifier, the HMC440QS16G(E) generates an output voltage that can be used to phase lock a VCO to a reference oscillator.Applications Satellite Communication Systems? Point-to-Point Radios? Military Applications? Sonet Clock Generation Test Equipment

The HMC441LM1 is a broadband 7 to 15.5 GHz GaAs PHEMT MMIC Medium Power Amplifier in an SMT leadless chip carrier package. The amplifier provides 15 dB of gain, 21.5 dBm of saturated power at 27% PAE from a +5V supply voltage. An optional gate bias is provided to allow adjustment of gain, RF output power, and DC power dissipation. This 50 Ohm matched amplifier does not require any external components making it an ideal linear gain block or driver for HMC SMT mixers.Applications Point-to-Point Radios Point-to-Multi-Point Radios VSAT LO Driver for HMC Mixers Military EW & ECM

The HMC375LP3(E) is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifier are ideal for GSM & CDMA cellular basestation front- end receivers operating between 1.7 and 2.2 GHz. This LNA has been optimized to provide 0.9 dB noise figure, 17 dB gain and +33 dBm output IP3 from a single supply of +5V @ 136mA. Input and output return losses are 14 dB typical with the LNA requiring minimal external components to optimize the RF input match, RF ground and DC bias.Applications GSM, GPRS & EDGE CDMA & W-CDMA DECT