The HMC472ALP4E are broadband 6-bit GaAs IC digital attenuators in low cost leadless surface mount packages. This single positive control line per bit digital attenuator incorporates off chip AC ground capacitors for near DC operation, making it suitable for a wide variety of RF and IF applications. Covering DC to 3.8 GHz, the insertion loss is less than 2.0 dB typical. The attenuator bit values are 0.5 (LSB), 1, 2, 4, 8, and 16 dB for a total attenuation of 31.5 dB. Attenuation accuracy is excellent at ? 0.25 dB typical step error with an IIP3 of +54 dBm. Six TTL/CMOS control inputs are used to select each attenuation state. A single Vdd bias of +5V is required.APPLICATIONSThe HMC472ALP4E is ideal for: 3G Infrastructure & access points? Cellular/3G, LTE & UMB WiMAX, WiBN & Fixed Wireless? Test Equipment and Sensors GSM, WCDMA & TD-SCDMA

The HMC454ST89(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1?2 watt MMIC amplifier operating between 0.4 and 2.5 GHz. Packaged in a low cost industry standard SOT89, the amplifier gain is typically 17.8 dB from 0.8 to 1.0 GHz and 12.5 dB from 1.8 to 2.2 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +40 dBm at 0.9 GHz or +42 dBm at 2.0 GHz. The high output IP3 and PAE makes the HMC454ST89(E) an ideal driver amplifier for Cellular/PCS/3G, WLL, ISM and Fixed Wireless applications.Applications GSM, GPRS & EDGE? CDMA & W-CDMA? CATV/Cable Modem? Fixed Wireless & WLL

The HMC356LP3(E) is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifier is ideal for GSM & CDMA cellular basestation and Mobile Radio front-end receivers operating between 350 and 550 MHz. This LNA has been optimized to provide 1 dB noise figure, 17 dB gain and +38 dBm output IP3 from a single supply of +5V @ 104 mA. Input and output return losses are 15 dB typical, with the LNA requiring only four external components to optimize the RF input match, RF ground and DC bias.Applications GSM 450 & GSM 480 CDMA 450 Private Land Mobile Radio

The HMC368LP4(E) is a miniature amp-doubler-amps utilizing GaAs PHEMT technology in 4 ? 4 mm leadless surface mount package. When driven by a +2 dBm signal, the multiplier provides +15 dBm typical output power from 9 to 16 GHz. The Fo and the 3Fo isolations are 18 dB typical. The low additive SSB phase noise of ?140 dBc/Hz at 100 kHz offset helps the user maintain good system noise performance. The HMC368LP4(E) is ideal for use in LO multiplier chains allowing reduced parts count vs. traditional approaches.APPLICATIONS Microwave Radios & VSAT Fiber Optic Infrastructure Military Communications & Radar

The HMC453QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1.6 watt MMIC power amplifier operating between 0.4 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 21.5 dB at 0.4 GHz and 8 dB at 2.1 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +47 dBm at 0.4 GHz or +51 dBm at 2.1 GHz. The power control (VPD) can be used for full power down or RF output power/current control. The high output IP3 and PAE make the HMC453QS16G(E) ideal power amplifier for Cellular/ PCS/3G, WLL, ISM and Fixed Wireless applications.Applications GSM, GPRS & EDGE? CDMA & W-CDMA? CATV/Cable Modem? Fixed Wireless & WLL

The HMC374(E) is a general purpose broad band Low Noise Amplifier (LNA) for use in the 0.3 - 3.0 GHz frequency range. The LNA provides 15 dB of gain and a 1.5 dB noise figure from a single positive supply of +2.75 to +5.5V. The low noise figure coupled with a high P1dB (22 dBm) and high OIP3 (37 dBm) make this part ideal for cellular applications. The compact LNA design utilizes on-chip matching for repeatable gain and noise figure performance. To minimize board area the design is offered in a low cost SOT26 package that occupies only 0.118? x 0.118?.Applications Cellular/PCS/3G? WCS, MMDS & ISM? Fixed Wireless & WLAN? Private Land Mobile Radio

The ADF4196 frequency synthesizer can be used to implement local oscillators (LO) in the upconversion and downconversion sections of wireless receivers and transmitters. Its architecture isspecifically designed to meet the GSM/EDGE lock time requirements for base stations, and the fast settling feature makes theADF4196 suitable for pulse Doppler radar applications.The ADF4196 consists of a low noise, digital phase frequency detector (PFD) and a precision differential charge pump. A differential amplifier converts the differential charge pump output to a single-ended voltage for the external voltage controlled oscillator (VCO). The sigma-delta (?-?) based fractional interpolator, working with the N divider, allows programmable modulus fractional-N division. Additionally, the 4-bit reference (R) counter and on-chip frequency doubler allow selectable reference signal (REFIN) frequencies at the PFD input.A complete phase-locked loop (PLL) can be implemented if the synthesizer is used with an external loop filter and a VCO. The switching architecture ensures that the PLL settles within the GSM time slot guard period, removing the need for a second PLL and associated isolation switches. This decreases the cost, complexity, PCB area, shielding, and characterization found on previous ping-pong GSM PLL architectures.Applications GSM/EDGE base stations PHS base stations Pulsed Doppler radar Instrumentation and test equipment Beam-forming/phased array systems

The ADF4355 allows implementation of fractional-N or integer-N phase-locked loop (PLL) frequency synthesizers when used with an external loop filter and an external reference frequency. A series of frequency dividers permits operation from 54 MHz to 6800 MHz.The ADF4355 has an integrated VCO with a fundamental output frequency ranging from 3400 MHz to 6800 MHz. In addition, the VCO frequency is connected to divide by 1, 2, 4, 8, 16, 32, or 64 circuits that allow the user to generate radio frequency (RF) output frequencies as low as 54 MHz. For applications that require isolation, the RF output stage can be muted. The mute function is both pin and software controllable.Control of all on-chip registers is through a simple 3-wire interface. The ADF4355 operates with analog and digital power supplies ranging from 3.15 V to 3.45 V, with charge pump and VCO supplies from 4.75 V to 5.25 V. The ADF4355 also contains hardware and software power-down modes.Applications Wireless infrastructure (W-CDMA, TD-SCDMA, WiMAX, GSM, PCS, DCS, DECT) Point to point/point to multipoint microwave links Satellites/VSATs Test equipment/instrumentation Clock generation

The ADF4360-3 is a fully integrated integer-N synthesizer andvoltage controlled oscillator (VCO). The ADF4360-3 is designedfor a center frequency of 1750 MHz. In addition, there is adivide-by-2 option available, whereby the user gets an RF output of between 800 MHz and 975 MHz. Control of all the on-chip registers is through a simple 3-wire interface. The device operates with a power supply ranging from 3.0 V to 3.6 V and can be powered down when not in use.?

The ADF4360-8 is an integrated integer-N synthesizer and voltagecontrolled oscillator (VCO). The ADF4360-8 center frequencyis set by external inductors. This allows a frequencyrange of between 65 MHz to 400 MHz. Control of all the on-chip registers is through a simple 3-wire interface. The device operates with a power supply ranging from 3.0 V to 3.6 V and can be powered down when not in use.?