The ADPA1107 is a gallium nitride (GaN), broadband power amplifier, delivering 45.0 dBm (35 W) with 56.5% typical power added efficiency (PAE) across a bandwidth of 4.8 GHz to 6.0 GHz. The ADPA1107 provides ?0.5 dB gain flatness from 5.4 GHz to 6.0 GHz.The ADPA1107 is ideal for pulsed applications such as radar, public mobile radio, and general-purpose amplification.The ADPA1107 is housed in a 40-lead, 6 mm ? 6 mm, lead frame chip scale package (LFCSP).APPLICATIONSWeather radarsMarine radarsMilitary radars

ADPA7005AEHZThe ADPA7005 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), 32 dBm saturated output power (PSAT), >1 W, power amplifier, with an integrated temperature compensated, on-chip power detector that operates between 18 GHz and 44 GHz. The ADPA7005 provides 15.5 dB of small signal gain and approximately 32 dBm of PSAT at 32 GHz from a 5 V supply (see Figure 26 in the data sheet). The ADPA7005 has an output IP3 of 40 dBm between 24 GHz to 34 GHz and is ideal for linear applications such as electronic countermeasure and instrumentation applications requiring >30 dBm of efficient PSAT. The RF input and outputs are internally matched and dc blocked for ease of integration into higher level assemblies. The ADPA7005 is packaged in a 7 mm ? 7 mm, 18?terminal ceramic leadless chip carrier with heat sink (LCC_HS) that exhibits low thermal resistance and is compatible with surface-mount manufacturing techniques.ADPA7005CHIPThe ADPA7005CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 20 GHz to 44 GHz. The amplifier provides 17 dB of small signal gain, 31 dBm output power for 1 dB compression (P1dB), and a typical output third-order intercept (IP3) of 41 dBm. The ADPA7005CHIP requires 1200 mA from a 5 V supply on the supply voltage (VDD) and features inputs and outputs that are internally matched to 50 ?, facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm wire bonds that are at least 0.31 mm long.Applications Military and space Test instrumentation Communications

The ADRF5045 is a general-purpose, single-pole, four-throw (SP4T) switch manufactured using a silicon process. It comes in a 24-terminal land grid array (LGA) package and provides high isolation and low insertion loss from 9 kHz to 30 GHz.This broadband switch requires dual supply voltages, +3.3 V and ?3.3 V, and provides complementary metal-oxide semiconductor (CMOS)/low voltage transistor-transistor logic (LVTTL) logiccompatible control.Applications Test instrumentation Microwave radios and very small aperture terminals (VSATs) Military radios, radars, and electronic counter measures (ECMs) Broadband telecommunications systems

The ADRF5047 is a reflective, single-pole, four-throw (SP4T) switch manufactured in the silicon process.The ADRF5047 operates from 9 kHz to 44 GHz with an insertion loss of lower than 2.7 dB and an isolation of higher than 31 dB. The device has a radio frequency (RF) input power handling capability of 26.5 dBm for both through path and hot switching.The ADRF5047 draws a low current of 3 ?A on the positive supply of +3.3 V, and ?110 ?A on the negative supply of ?3.3 V. The device provides complementary metal-oxide semiconductor (CMOS)-/low voltage transistor-transistor logic (LVTTL)-compatible controls.The ADRF5047 is pin-compatible with the ADRF5046 fast switching version, which operates from 100 MHz to 44 GHz.The ADRF5047 comes in a 20-terminal, 3 mm ? 3 mm, RoHS-compliant, land grid array (LGA) package and operates from ?40?C to +105?C.Applications Industrial scanner Test instrumentation Cellular infrastructure?mmWave 5G Military radios, radars, and electronic counter measures (ECMs) Microwave radios and very small aperture terminals (VSATs)

The ADRF5141 is a reflective, single pole double-throw (SPDT) switch manufactured in the silicon process. It is used in transmit-receive (T/R) applications with an integrated power limiter at the receive side. The ADRF5141 operates from 8 GHz to 12 GHz. The RX arm with the integrated power limiter has a limiting capability of 18 dBm output power (TBC) with a low insertion loss of 1.3 dB at 10 GHz while the TX arm has an insertion loss of 0.9 dB at 10 GHz. The ADRF5141 draws a low current of 13 ?A on the positive supply of +3.3 V and 360 ?A on negative supply of ?3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible controls. The ADRF5141 requires no additional driver circuitry, making it an ideal alternative to GaN and PIN diode-based switches. The ADRF5141 comes in a 20-lead, 3.0 mm ? 3.0 mm, RoHS-compliant, land grid array (LGA) package and can operate from ?40?C to +85?.APPLICATIONSElectronic warfareMilitary radios, radars, and electronic counter measuresGaN and PIN diode replacement

The ADRF5300 is a reflective, SPDT switch manufactured in the silicon process.The ADRF5300 is developed for 5G applications ranging from 24 GHz to 32 GHz. The ADRF5300 has a low insertion loss of 1.1 dB, a high isolation of 38 dB, and an RF input power handling capability of 28 dBm average and 36 dBm peak.The ADRF5300 incorporates a negative voltage generator (NVG) to operate with a single positive supply of 3.3 V (VDD) applied to the VDD pin. The device employs CMOS- and low voltage transistor to transistor logic (LVTTL)-compatible controls.The ADRF5300 is packaged in a 20-terminal, 3 mm ? 3 mm, RoHS-compliant, land grid array (LGA) package and can operate from ?40?C to +105?C.APPLICATIONSIndustrial scannerTest instrumentationCellular infrastructure: 5G millimeter waveMilitary radios, radars, electronic counter measures (ECMs)Microwave radios and very small aperture terminals (VSATs)

The ADRF5301 is a reflective, single-pole, double-throw (SPDT) switch manufactured in the silicon process.The ADRF5301 was developed for 5G applications from 35 GHz to 44 GHz. This device has low insertion loss of 1.8 dB, high isolation of 28 dB, and radio frequency (RF) input power handling capability of 28 dBm average and 36 dBm peak.The ADRF5301 incorporates a negative voltage generator (NVG) to operate with a single positive supply of 3.3 V applied to the VDD pin. The devices employs complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible control.The ADRF5301 is pin-compatible with the ADRF5300, which operates from 24 GHz to 32 GHz.The ADRF5301 comes in a 20-terminal, 3 mm ? 3 mm, RoHS-compliant, land grid array (LGA) package and can operate from ?40?C to +105?C.Applications Industrial scanner Test instrumentation Cellular infrastructure mmWave 5G Military radios, radars, electronic counter measures (ECMs) Microwave radios and very small aperture terminals (VSATs) ?

The ADRF5547 is a dual-channel, integrated RF, front end multichip module designed for time division duplexing (TDD) applications that operates from 3.7 GHz to 5.3 GHz. The ADRF5547 is configured in dual channels with a cascading twostage low noise amplifier (LNA) and a high power silicon, single-pole, double-throw (SPDT) switch.In high gain mode, the cascaded, two-stage LNA and switch offer a low noise figure of 1.6 dB and high gain of 33 dB at 4.6 GHz with an output third order intercept point (OIP3) of 31 dBm (typical).In low gain mode, one stage of the two-stage LNAs is in bypass, providing 18 dB gain at lower current of 36 mA. In power-down mode, the LNAs are turned off and the device draws 12 mA.?In transmit operation, when RF inputs are connected to a termination pin (TERM-ChA or TERM-ChB), the switch provides a low insertion loss of 0.50 dB and handles long term evolution (LTE) average power (9 dB peak to average ratio (PAR)) of 40 dBm for full lifetime operation and 43 dBm for single event (<10 sec) LNA protection operation.The device comes in an RoHS compliant, compact, 40-lead, 6 mm ? 6 mm LFCSP.Applications? Wireless infrastructure TDD Massive Multiple input and Multiple Output (MIMO) and Active Antenna Systems TDD-based Communication Systems

The ADRF6650 is a highly integrated downconverter that integrates dual mixers, dual digital switched attenuators, dual digital variable gain amplifiers, a phase-locked loop (PLL), and voltage controlled oscillators (VCOs). In addition, the ADRF6650 integrates two radio frequency (RF) baluns, serial gain control (SGC) controls, and fast enable inputs for time division duplex (TDD) operation.The on-chip RF baluns enable the ADRF6650 to support 50 ? terminated RF inputs. The integrated passive mixer provides a highly linear downconversion for a 200 MHz, sliding, intermediate frequency (IF) window. The ADRF6650 uses broadband square wave limiting local oscillator (LO) amplifiers to achieve an RF bandwidth of 450 MHz to 2700 MHz. Unlike conventional narrow-band sine wave LO amplifier solutions, this amplifier permits the LO to be applied either above or below the RF input over an extremely wide bandwidth.The ADRF6650 offers two alternatives for generating the differential LO input signal: internally via the on-chip fractional-N synthesizer with low phase noise VCOs, or externally via a low phase noise LO signal. The integrated PLL/VCO enables continuous LO coverage from 450 MHz to 2900 MHz. The PLL referenceinput supports a wide frequency range and includes integrated reference dividers before the phase frequency detector (PFD).The ADRF6650 is fabricated using an advanced silicon-germanium (SiGe) bipolar complementary metal-oxide semiconductor(BiCMOS) process. It is available in a 56-lead, RoHS-compliant, 8 mm ? 8 mm, lead frame chip scale package (LFCSP) package with an exposed pad. Performance is specified over the ?40?C to +105?C maximum paddle temperature.Applications Multiband/multistandard cellular base station diversity receivers Wideband radio link diversity downconverters Multimode cellular extenders and picocells

The ADRF6780 is a silicon germanium (SiGe) design, wideband,microwave upconverter optimized for point to point microwaveradio designs operating in the 5.9 GHz to 23.6 GHz frequencyrange.The upconverter offers two modes of frequency translation. The device is capable of direct conversion to radio frequency (RF) from baseband I/Q input signals, as well as single sideband (SSB) upconversion from a real intermediate frequency (IF) input carrier frequency. The baseband inputs are high impedance and are generally terminated off chip with 100 ? differential back terminations. The baseband I/Q input path can be disabled and a modulated real IF signal anywhere from 0.8 GHz to 3.5 GHz can fed into the IF input path and upconverted to 5.9 GHz to 23.6 GHz while suppressing the unwanted sideband by typically better than 25 dBc. The serial port interface (SPI) allows tweaking of the quadrature phase adjustment to allow optimum sideband suppression. In addition, the SPI interface allows powering down the output power detector to reduce power consumption when power monitoring is not necessary.The ADRF6780 upconverter comes in a compact, thermallyenhanced, 5 mm ? 5 mm LFCSP package. The ADRF6780operates over the ?40?C to +85?C temperature range.APPLICATIONS Point to point microwave radios Radar, electronic warfare systems Instrumentation, automatic test equipment (ATE)