The LTC6227 are very fast, low noise rail-to-rail output, unity gain stable single/dual op amps, with a gainbandwidth product of 420MHz and a slew rate of 180V/?s. The low input referred voltage noise of only 1nV/?Hz and low distortion of less than ?90dBC for 4VP-P signals at 1MHz makes them ideal for applications that require high dynamic range and deal with very fast signals, such as driving A/D converters.The combination of low offset, low offset drift, high gain (139dB) and high CMRR (114dB) make these excellent devices for high dynamic range applications.The LTC6226 family maintains excellent performance for supply voltages of 2.8V to 11.75V and the devices are fully specified at supplies of 3V, 5V and 10V (?5V).With an input range extending to the negative rail and rail-to-rail output stage, the operational amplifier can accommodate wide swinging signals, and true single supply operation.For space constrained applications, the amplifiers come in 2mm ? 2mm DFN (single) and 3mm ? 3mm DFN (dual) packages. The devices are also available in 8-lead SOIC,TSOT-23 and MS8E.These amplifiers can be used as replacements for many high speed op amps to improve speed, noise and dynamic range.?Applications Optical Electronics: Fast AC-Coupled Transimpedance Amplifiers Driving High Dynamic Range A/D Converters Active Filters Video Amplifiers Low Voltage Low Distortion Amplification

Other Development Tools EVAL-SDP-CS1Z

The SSM2375 is a fully integrated, high efficiency, Class-D audioamplifier. It is designed to maximize performance for mobilephone applications. The application circuit requires a minimumof external components and operates from a single 2.5 V to 5.5 Vsupply. It is capable of delivering 3 W of continuous output powerwith 100 dB.Spread-spectrum pulse density modulation (PDM) is used toprovide lower EMI-radiated emissions compared with otherClass-D architectures. The inherent randomized nature ofspread-spectrum PDM eliminates the clock intermodulation(beating effect) of several amplifiers in close proximity.The SSM2375 includes an optional modulation select pin(ultralow EMI emissions mode) that significantly reduces theradiated emissions at the Class-D outputs, particularly above100 MHz. In ultralow EMI emissions mode, the SSM2375can pass FCC Class B radiated emission testing with 50 cm,unshielded speaker cable without any external filtering.The device also includes a highly flexible gain select pin thatallows the user to select a gain of 0 dB, 3 dB, 6 dB, 9 dB, or12 dB. The gain selection feature improves gain matchingbetween multiple SSM2375 devices within a single applicationas compared to using external resistors to set the gain.The SSM2375 has a micropower shutdown mode with a typicalshutdown current of 20 nA. Shutdown is enabled by applyinga logic low to the SD pin.The device also includes pop-and-click suppression circuitry.This suppression circuitry minimizes voltage glitches at theoutput during turn-on and turn-off, reducing audible noiseon activation and deactivation.Other features that simplify system-level integration of theSSM2375 include input low-pass filtering to suppress out-of-bandDAC noise interference to the PDM modulator and fixed-inputimpedance to simplify component selection across multipleplatform production builds.The SSM2375 is specified over the industrial temperature rangeof ?40?C to +85?C. It has built-in thermal shutdown and outputshort-circuit protection. It is available in a halide-free, 9-ball,1.5 mm ? 1.5 mm wafer level chip scale package (WLCSP).Applications Mobile phones MP3 players Portable electronics

The SSM4321 is a fully integrated, high efficiency, Class-Daudio amplifier with digitized output of output voltage, outputcurrent, and the PVDD supply voltage. It is designed to maximize performance for mobile phone applications. The application circuit requires a minimum of external components and operates from a 2.5 V to 5.5 V supply for the amplifier and a 1.42 V to 3.6 V supply for input/output. The SSM4321 is capable of delivering 2.2 W of continuous output power with 100 dB.The SSM4321 includes circuitry to sense output current, output voltage, and the PVDD supply voltage. Current sense is performedusing an external sense resistor that is connected between anoutput pin and the load. The output current and voltage are sentto ADCs with 16-bit resolution; the PVDD supply voltage is sent to an ADC with 8-bit resolution.The outputs of these ADCs are available on the TDM or I2S output serial port. The SLOT pin is used to determine which of four possible output slots is used on the TDM interface. A stereo I2S interface can be selected by reversing the pin connections forBCLK and FSYNC. Also, a direct PDM bit stream of voltage andcurrent data can be selected via the SLOT pin.Spread-spectrum pulse density modulation (PDM) is used to provide lower EMI-radiated emissions compared with other Class-D architectures. The inherent randomized nature of spread-spectrum PDM eliminates the clock intermodulation (beating effect) of several amplifiers in close proximity.The SSM4321 produces ultralow EMI emissions that significantlyreduce the radiated emissions at the Class-D outputs, particularly above 100 MHz. The ultralow EMI emissions of the SSM4321 arealso helpful for antenna and RF sensitivity problems.The device includes a highly flexible gain select pin that requiresonly one series resistor to select a gain setting of 0 dB, 3 dB, 6 dB, 9 dB, or 12 dB. Input impedance is fixed at 80 k?, independent of the selected gain.The SSM4321 has a shutdown mode with a typical shutdowncurrent of <1 ?A. Shutdown is enabled by removing the BCLK input. A clock must be present on the BCLK pin for the part to operate. The device also includes pop-and-click suppression circuitry, which minimizes voltage glitches at the output during turn-on and turn-off, reducing audible noise on activation and deactivation.The SSM4321 is specified over the industrial temperature rangeof ?40?C to +85?C. It has built-in thermal shutdown and output short-circuit protection. It is available in a halide-free, 16-ball, 0.4 mm pitch, 1.74 mm ? 1.74 mm wafer level chip scale package (WLCSP).Applications Mobile phones MP3 players Portable electronics

The ADRF8800/ADRF8850 are low power, integrated systems on chip (SoC) that include a 2.4 GHz (industrial scientific medical) ISM band radio and an embedded microcontroller unit (MCU) subsystem.The ADRF8800/ADRF8850 provide wireless communications between the battery cell monitoring chip and the battery management system (BMS) controller. In the wireless battery management system (wBMS), the ADRF8800 nodes reside at the battery cells and take sensor data from the battery cell monitors. The nodes send the data over the air to an ADRF8850 network manager, and the manager provides the data to the BMS controller. The ADRF8850 network manager configures the network of nodes and manages the communications protocol.The embedded MCUs integrate static random access memory (SRAM), embedded flash memory, one-time programmable (OTP) memory, and an analog subsystem that provides clocking and reset.The ADRF8800/ADRF8850 has a rich set of peripherals, including serial peripheral interface (SPI), general-purpose input and output (GPIOs) ports, universal asynchronous receiver/transmitter (UART), and Joint Test Action Group (JTAG) port, as well as an analog-to-digital converter (ADC) and temperature sensor.The ADRF8800/ADRF8850 provide secure boot using software stored in read only memory (ROM) that authenticates the next boot stage using a hardware accelerated 256-bit elliptic curve cryptography (ECC-256) engine. Other hardware accelerated cryptographic features include the 128-bit advanced encryption standard (AES-128), 256-bit advanced encryption standard (AES-256), and Secure Hash Algorithm 256 (SHA-256). The ADRF8800/ADRF8850 have protected key storage with a root encrypted key generated on-chip that is only accessible to the on-chip hardware. The devices incorporate a true random number generator (TRNG) that is used to seed a National Institute of Standards and Technology (NIST) certified deterministic random bit generator (DRBG). The ADRF8800/ADRF8850 also include support for secure firmware updates with rollback protection. The in-field OTP memory is included to enforce the access control of debug ports and memory access once a device is ready for deployment.The ADRF8800/ADRF8850 feature on-chip, low dropout (LDO) regulators that allow the devices to be powered by a single 3.3 V nominal supply, provided by an external power management IC (PMIC) either stepping down from a high voltage bus or a 12 V battery.Each ADRF8800/ADRF8850 uses a single 40 MHz crystal to provide precision timing for the system.The ADRF8800/ADRF8850 are available in a 7 mm ? 7 mm body size, 48-lead LQFP_EP package, measuring 9 mm ? 9 mm when leads are included.APPLICATIONS Wireless Battery Management Systems

The ADL5315 is a wide input current range precision high-side current mirror featuring a stable and user-adjustable input voltage. It is optimized for use with PIN photodiodes, but its flexibility and wide operating range make it suitable for a broad array of additional applications. The part provides a compact solution for the common and often challenging problem of interfacing an optical power monitoring device (such as a log amp) to the cathode-side of a PIN photodiode. The ADL5315 mirrors the current at the cathode at a 1:1 ratio over a six-decade range, producing an output exactly proportional to the reference current monitored. Competing optical current monitors have much higher mirror ratios over narrower dynamic ranges, rendering proportional outputs at very low input currents impossible, while discrete solutions are more tedious to implement and may require significantly more board space.

The ADL5317 is a high-voltage, wide dynamic range biasing and current monitoring device optimized for use with avalanche photodiodes. With the provision of a stable high-voltage supply up to 80 V, the bias voltage at the VAPD pin can be varied from 6 V to 75 V using the 3 V compatible VSET pin. The current sourced from the VAPD pin, over a range of 5 nA to 5 mA, is accurately mirrored with an attenuation of 5 and sourced from the IPDM monitor output. In a typical application, the monitor output drives a current-input logarithmic amplifier to produce an output representing the optical power incident upon the photodiode. The photodiode anode may be connected to a high-speed transimpedance amplifier for the extraction of the data stream.A signal of 0.2 V to 2.5 V with respect to ground applied at the VSET pin is amplified by a fixed gain of 30 to produce the 6 V to 75 V bias at Pin VAPD. The accuracy of the bias control interface of the ADL5317 allows for straightforward calibration, thereby maintaining a constant avalanche multiplication factor of the photodiode over temperature. The current monitor output, IPDM, maintains its high linearity vs. photodiode current over the full?range of APD bias voltage. The current ratio of 5:1 remains constant as VSET and VPHV are varied.The ADL5317 also offers a supply tracking mode compatible with adjustable high voltage supplies. The VAPD pin accurately follows 2.0 V below the VPHV supply pin when VSET is tied to a voltage from 3.0 V to 5.5 V (or higher with a current limiting resistor), and the VCLH pin is open.Protection from excessive input current at VAPD as well as excessive die temperature is provided. The voltage at VAPD falls rapidly from its setpoint when the input current exceeds 18 mA nominally. A die temperature in excess of 140?C will cause the bias controller and monitor to shut down until the temperature falls below 120?C. Either overstress condition will trigger a logic low at the FALT pin, an open collector output loaded by an external pull-up to an appropriate logic supply (1 mA max).The ADL5317 is available in a 16-lead LFCSP package and is specified for operation from ?40?C to +85?C.APPLICATIONS Optical power monitoring and biasing in APD systems Wide dynamic range voltage sourcing and current monitoring in high voltage systems

The ADL5320 incorporates a dynamically adjustable biasing circuit that allows for the customization of OIP3 and P1dB performance from 3.3 V to 5 V without the need for an external bias resistor. This feature gives the designer the ability to tailor driver amplifier performance to the specific needs of the design. This feature also creates the opportunity for dynamic biasing of the driver amplifier, where a variable supply is used to allow for full 5 V biasing under large signal conditions and then can reduce the supply voltage when signal levels are smaller and lower power consumption is desirable. This scalability reduces the need to evaluate and inventory multiple driver amplifiers for different output power requirements from 22 dBm to 26 dBm output power levels.The ADL5320 is also rated to operate across the wide temperature range of ?40?C to +105?C for reliable performance in designs that experience higher temperatures, such as power amplifiers. The 1?4 watt driver amplifier also covers the 400 MHz to 2700 MHz wide frequency range and only requires a few external components to be tuned to a specific band within that wide range. This high performance, broadband RF driver amplifier is well suited for a variety of wired and wireless applications including cellular infrastructure, ISM band power amplifiers, defense equipment, and instrumentation equipment. A fully populated evaluation board is available.The ADL5320 also delivers excellent adjacent channel power ratio (ACPR) vs. output power and bias voltage. The driver can deliver greater than 17 dBm of output power at 2140 MHz while achieving an ACPR of ?55 dBc at 5 V. If the bias is reduced to 3.3 V, the ?55 dBc ACPR output power reduces to 9 dBm.Applications Wireless infrastructure Automated test equipment ISM/AMR applications

The ADL5321 is a broadband, linear driver RF amplifier that operates at frequencies from 2.3 GHz to 4.0 GHz. The device can be used in a wide variety of wired and wireless applications, including ISM, WLL, PCS, GSM, CDMA, and W-CDMA.The ADL5321 operates with a 5 V supply voltage and a supply current of 90 mA.The ADL5321 is fabricated on the GaAs HBT process. The device is packaged in a low cost SOT-89 that uses an exposed paddle for excellent thermal impedance. It operates from ?40?C to +105?C, and a fully populated evaluation board is available.The ADL5320 is a companion part to the ADL5321 that operates at similar performance from 400 MHz to 2700 MHz.

The ADL5372 is a member of the fixed-gain quadrature modulator(F-MOD) family designed for use from 1500 MHz to 2500 MHz.Its excellent phase accuracy and amplitude balance enable highperformance intermediate frequency or direct radio frequencymodulation for communication systems.The ADL5372 provides a >500 MHz, 3 dB baseband bandwidth,making it ideally suited for use in broadband zero IF or lowIF-to-RF applications and in broadband digital predistortiontransmitters. The ADL5372 accepts two differential baseband inputs and asingle-ended, local oscillator (LO) and generates a single-endedoutput.The ADL5372 is fabricated using the Analog Devices, Inc.,advanced silicon-germanium bipolar process. It is available ina 24-lead, exposed-paddle, RoHS compliant, LFCSP. Performanceis specified over a ?40?C to +85?C temperature range. A RoHScompliant evaluation board is available. Applications Cellular communication systems:?CDMA2000/GSM/WCDMA WiMAX/broadband wireless access systems Satellite modems