The HMC870LC5 is a GaAs MMIC pHEMT Distributed Driver Amplifier packaged in a leadless 5x5 mm surface mount package which operates between DC and 20 GHz. The amplifier provides 17 dB of gain, 8Vp-p saturated output swing and features output swing cross point adjustment. Gain flatness is excellent at ?0.5 dB as well as very low additive RMS jitter of 300 fs for 10 Gbps operation.The HMC870LC5 provides Metro and Long Haul designers with scalable power dissipation for varying output drive requirements. (<0.4W at VOUT = 3.6VP-P and <1W at VOUT = 8.5VP-P) The HMC870LC5 has a very wide supply (VDD) operating range from +3.3V to +7V, and the RF I/Os are internally matched to 50 Ohms.APPLICATIONS 10 Gbps NRZ MZ &?Low V Modulator Driver 10 Gbps RZ Transmission 40 Gbps DQPSK Broadband Gain Block for?Test & Measurement Equipment Military & Space

The HMC409LP4(E) is a high efficiency GaAs InGaP HBT MMIC Power amplifier operating from 3.3 to 3.8 GHz. The amplifier is packaged in a low cost, leadless SMT package. Utilizing a minimum of external components the amplifier provides 31 dB of gain and +32.5 dBm of saturated power from a +5V supply voltage. The power control (Vpd) can be used for full power down or RF output power/current control. For +22 dBm OFDM output power (64 QAM, 54 Mbps), the HMC409LP4(E) achieves an error vector magnitude (EVM) of 2%, meeting WiMAX 802.16 linearity requirements.Applications WiMAX 802.16 Fixed Wireless Access Wireless Local Loop

The HMC510LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC510LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is +13 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5?5 mm surface mount package, and requires no external matching components.APPLICATIONS Point-to-Point/Multi-Point Radio? Test Equipment & Industrial Controls? SATCOM? Military End-Use

The HMC512LP5(E) is a GaAs InGaP Herterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC512LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO's phase noise performance is excellent over temperature, shock and process due to the oscillator's monolithic structure. Power output is +9 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage cont-rolled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONS Point-to-Point Radios? Point-to-Multi-Point Radios Test Equipment & Industrial Controls? SATCOM Military End-Use

The HMC584LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC584LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is +10 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONS Point to Point/Multipoint Radio Test Equipment & Industrial Controls SATCOM Military End-Use

The HMC561LP3(E) is a x2 active broadband frequency multiplier utilizing GaAs PHEMT technology in a leadless RoHS compliant SMT package. When driven by a +5 dBm signal, the multiplier provides +14 dBm typical output power from 8 to 21 GHz and the Fo and 3Fo isolations are 15 dBc at 16 GHz. The HMC561LP3(E) is ideal for use in LO multiplier chains for Pt to Pt & VSAT Radios yielding reduced parts count vs. traditional approaches.The low additive SSB Phase Noise of -139 dBc/Hz at 100 kHz offset helps maintain good system noise performance. The RoHS packaged HMC561LP3(E) eliminates the need for wire bonding, and allows the use of surface mount manufacturing techniques.APPLICATIONS Clock Generation Applications:? SONET OC-192 & SDH STM-64? Point-to-Point & VSAT Radios? Test Instrumentation? Military & Space

The HMC678LC3C is a 2:1 Selector designed to support data transmission rates of up to 13 Gbps, and selector port operation of up to 13 GHz. The selector routes one of the two single-ended inputs to the differential output upon assertion of the proper select port. All single-ended input signals to the HMC678LC3C are terminated with 50 ohms to ground on-chip, and may be either AC or DC coupled.The outputs of the HMC678LC3C may be operated either differentially or single-ended. Outputs can be connected directly to a 50 ohm terminated system, while DC blocking capacitors may be used if the terminating system is 50 ohms to a non-ground DC voltage. The HMC678LC3C operates from a single -3.3V dc supply and is available in a ceramic RoHS compliant 3x3 mm SMT package.APPLICATIONS 2:1 Multiplexer up to 13 Gbps RF ATE Applications Broadband Test & Measurement Serial Data Transmission up to 13 Gbps Redundant Path Switching Built-in Test

The HMC727 is a D-type Flip Flop designed to support data transmission rates of up to 13 Gbps, and clock frequencies as high as 13 GHz. During normal operation, data is transferred to the outputs on the positive edge of the clock. Reversing the clock inputs allows for negative-edge triggered applications. All input signals to the HMC727 are terminated with 50 Ohms to ground on-chip, and maybe either AC or DC coupled.The differential outputs of the HMC727 may be either AC or DC coupled. Outputs can be connected directly to a 50 Ohm to ground terminated system, while DC blocking capacitors may be used if the terminating system is 50 Ohms to a nonground DC voltage. The HMC727 operates from a single -3.3V DC supply and is available in a ceramic RoHS compliant 3x3 mm SMT package.APPLICATIONS RF ATE Applications Broadband Test & Measurement Serial Data Transmission?up to 13 Gbps Digital Logic Systems up to 13 GHz

The HMC737 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC737 integrate a resonator, negative resistance device, varactor diode and feature half frequency output. The VCO's phase noise performance is excellent over temperature, shock, and process due to the oscillator's monolithic structure. Power output is +9 dBm typical from a +4.2V supply voltage. The voltage controlled oscillator is packaged in a leadless QFN 4x4 mm surface mount package, and requires no external matching components.APPLICATIONS Point-to-Multi-Point Radios Test Equipment & Industrial Controls SATCOM Military End-Use

The HMC740 is an InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifier covering 0.05 to 3 GHz. Packaged in an industry standard SOT89, the amplifier can be used as a cascadable 50 Ohm RF or IF gain stage as well as a PA or LO driver with up to +18 dBm output power. The HMC740 offers 15 dB of gain with a +40 dBm output IP3 at 100 MHz, and can operate directly from a +5V supply. The HMC740 exhibits excellent gain and output power stability over temperature, while requiring a minimal number of external bias components.Applications Cellular/3G & WiMAX/4G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment IF & RF Applications