The ADL6010 is a versatile, broadband envelope detector covering the microwave spectrum. It provides state-of-the-art accuracy with very low power consumption (8 mW) in a simple, easy to use 6-lead format. The output is a baseband voltage proportional to the instantaneous amplitude of the radio frequency (RF) input signal. It exhibits minimal slope variation of the RF input to envelope output transfer function from 0.5 GHz to 43.5 GHz.The detector cell uses a proprietary eight Schottky diode array followed by a novel linearizer circuit that creates a linear voltmeter with an overall scaling factor (or transfer gain) of nominally ?2.2 relative to the voltage amplitude of the input.Although the ADL6010 is not inherently a power responding device, it remains convenient to specify the input in this way. Thus, the permissible input power, relative to a 50 ? source input impedance, ranges from ?30 dBm to +15 dBm. The corresponding input voltage amplitudes of 11.2 mV to 1.8 V generate quasi-dc outputs from about 25 mV to 4 V above common (COMM).A subtle aspect of the balanced detector topology is that no even-order distortion, caused by nonlinear source loading, occurs at the input. This is an important benefit in applications where a low ratio coupler is used to extract a signal sample and is a significant improvement over traditional diode detectors.The power equivalent of a fluctuating RF input amplitude can be extracted by the addition of an rms-to-dc converter IC. Alternatively, the baseband output can be applied to a suitably fast analog-to-digital converter (ADC) and the rms value (and other signal metrics, such as peak to average ratio) calculated in the digital domain.The output response accuracy is insensitive to variation in the supply voltage, which can range from 4.75 V to 5.25 V. The ultralow power dissipation contributes to its long-term stability.The ADL6010ACPZN is specified for operation from ?40?C to +85?C, and the ADL6010SCPZN is specified for operation from ?55?C to +125?C. Both are available in a 6-lead, 2 mm ? 2 mm LFCSP package.Applications Microwave point to point links Microwave instrumentation Radar-based measurement systems

The ADL6317 is a transmit variable gain amplifier (VGA) that provides an interface from radio frequency digital-to-analog converters (RF DACs), transceivers, and systems on a chip (SoC) to power amplifiers. Integrated balun and hybrid couplers allow high performance RF capability in the frequency range of 1500 MHz to 3000 MHz.To optimize performance vs. power level, the ADL6317 includes a voltage variable attenuator (VVA), high linearity amplifiers, and a digital step attenuator (DSA). All of the devices integrated into the ADL6317 are programmable via a 4-wire serial port interface (SPI).The ADL6317 is manufactured on an advanced silicon germanium (SiGe), bipolar complementary metal oxide semiconductor (BiCMOS) process.Applications 2G/3G/4G/long-term evolution (LTE) in FDD/TDD broadband communication systems

The ADL8104 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise, wideband, high linearity amplifier that operates from 0.4 GHz to 7.5 GHz.The ADL8104 provides a typical gain of 15 dB at 0.6 GHz to 6 GHz, a 3.5 dB typical noise figure at 0.4 GHz to 6 GHz, a 20 dBm typical output power for 1 dB compression (OP1dB) at 0.6 GHz to 6 GHz, and a typical output third-order intercept (OIP3) of 32 dBm at 0.6 GHz to 6 GHz, requiring only 150 mA from a 5 V drain supply voltage. The low noise amplifier has a high output second-order intercept (OIP2) of 52 dBm typical at 0.6 GHz to 6 GHz, making the ADL8104 suitable for military and test instrumentation applications.The ADL8104 also features inputs and outputs that are internally matched to 50 ?. The RFIN and RFOUT pins are internally ac-coupled and the bias inductor is also integrated, making the ADL8104 ideal for surface-mounted technology (SMT)-based, high density applications.The ADL8104 is housed in an RoHS-compliant, 3 mm ? 3 mm, 16-lead LFCSP.APPLICATIONSTest instrumentationMilitary communications

The ADL8106 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), wideband low noise amplifier that operates from 20 GHz to 54 GHz. The ADL8106 provides a gain of 21.5 dB, an output power for 1 dB compression (OP1dB) of 14 dBm, and a typical output third-order intercept (OIP3) of 21.5 dBm at 30 GHz to 44 GHz. The ADL8106 requires 120 mA from a 3 V supply voltage (VDD) and features inputs and outputs that are internally matched to 50 ?, facilitating integration into multichip modules (MCMs). All data is taken with the RFIN and RFOUT pads connected via one 0.076 mm (3 mil) wide gold ribbon bond of 0.076 mm to 0.152 mm (3 mil to 6 mil) minimal length.

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