The HMC835LP6GE is a low noise, wide band, Fractional-N PLL that features an integrated VCO with a fundamental frequency of 2020 to 4100 MHz, and an integrated VCO Output Divider (divide by 2/4/6/.../60/62) that together enable the HMC835LP6GE to generate frequencies from 33 MHz to 4100 MHz. Integrated Phase Detector (PD) and a deltasigma modulator capable of operating at up to 100 MHz enable wider loop-bandwidths, faster frequency changes along with excellent spectral performance.Two independent RF outputs, with independent gain control, enable the HMC835LP6GE to distribute identical frequency and phase signals to multiple destinations, at optimal signal levels tailored to each output.External VCO input, allows the HMC835LP6GE to lock external VCOs, and enables cascaded LO architectures for MIMO radio applications. Two separate Charge Pump (CP) outputs enable separate loop filters optimized for both integrated and external VCOs, and seamless switching between integrated or external VCOs during operation. Programmable RF output phase feature can further phase adjust and synchronize multiple HMC835LP6GEs enabling scalable MIMO and beam-forming radio architectures.Additional features include configurable output mute function that mutes RF outputs during frequency changes, Exact Frequency Mode that enables the HMC835LP6GE to generate fractional frequencies with 0 Hz frequency error, and the ability to synchronously change frequencies without changing the phase of the output signal.Applications MIMO Radio Architectures Cellular Infrastructure Cellular backhaul Communications Test Equipment CATV Equipment Phased Array Applications? DDS Replacement

The HMC1019ALP4E is a broadband 5-bit GaAs IC digital attenuator in a low cost leadless surface mount package. Covering 0.1 to 30.0 GHz, the insertion loss is less than 4.0 dB typical. The attenuator bit values are 0.5 (LS B), 1, 2, 4, 8 for a total attenuation of 15.5 dB. Attenuation accuracy is excellent at ?0.3 dB typical step error with an IIP3 of +45 dBm. The control interface is CMOS/TTL compatible and accepts a three wire serial input. The HMC1019ALP4E features a user selectable power up state and a serial output port for cascading other Analog Devices serial controlled components.APPLICATIONS Fiber Optics & Broadband Telecom Microwave Radio & VSAT Military Radios, Radar & ECM Space Applications Sensors Test & Measurement Equipment

The HMC1082CHIP is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), driver amplifier that operates from 5.5 GHz to 18 GHz. The HMC1082CHIP provides a typical gain of 24 dB, 36 dBm output IP3, and 25.5 dBm of output power for 1 dB compression, requiring only 220 mA from a 5 V supply voltage. The saturated output power (PSAT) is 26 dBm with 24% power added efficiency (PAE).The HMC1082CHIP is an ideal driver amplifier for a wide range of applications including point to point radios from 5.5 GHz to 18 GHz and marine radars at 9 GHz. The HMC1082CHIP can also be used for 6 GHz to 18 GHz EW and ECM applications.APPLICATIONS Software defined radios Electronics warfare (EW) Radar applications Electronic countermeasures (ECMs)

The HMC1162 is a monolithic microwave integrated circuit (MMIC), voltage controlled oscillator (VCO) that integrates the resonator, a negative resistance device, and varactor diodes, and features a half frequency output.Because of the monolithic construction of the oscillator, the output power and phase noise performance are excellent over temperature.The power output is 11 dBm typical from a 5 V supply voltage. The VCO is housed in a RoHS-compliant, 32-lead LFCSP and requires no external matching components.APPLICATIONS Point to point and multipoint radios Test equipment and industrial controls Very small aperture terminals (VSATs)

The HMC213BMS8E is an ultraminiature double balanced mixer in a plastic, 8-lead mini small outline package (MSOP). This passive monolithic microwave integrated circuit (MMIC) mixer is constructed of gallium arsenide (GaAs) Schottky diodes and novel planar transformer baluns on the chip. The device can be used as an upconverter, downconverter, biphase demodulator or modulator, or phase comparator. The consistent MMIC performance improves system operation and ensures regulatory compliance.Applications Base stations Personal Computer Memory Card International Association (PCMCIA) transceivers Wireless local loops

The HMC270AMS8GE are broad-band non-reflectiveGaAs SPDT switches in 8 lead MSOP grounded basesurface mount plastic packages. Covering DC to 8GHz, the switch offers excellent isolation from 70 to35 dB. The negative control voltage of -5 volts allowsoperation down to DC. If positive control is requiredalong with high isolation, see the DC to 3.5 GHzHMC284AMS8GE non-reflective SPDT.APPLICATIONSThe HMC270AMS8GE is ideal for DC - 8.0 GHz applications: CATV MMDS and wireless LAN Wireless local loop

The HMC345ALP3E is a broadband non-reflective GaAs MESFET SP4T switch in a low cost leadless surface mount packages. Covering DC to 8 GHz, this switch offers high isolation and low insertion loss. This switch also includes an on board binary decoder circuit which reduces the required logic control lines to two. The switch operates using a positive control voltage of 0/+5V, and requires a fixed bias of +5V.* Blocking capacitors are required at ports RFC and RF1, 2, 3, & 4. Their value will determine the lowest transmission frequency.APPLICATIONSThis switch is suitable for usage in DC - 8.0 GHz 50-Ohm or 75-Ohm systems: Broadband Fiber Optics Switched Filter Banks Wireless below 8 GHz

The HMC3716LP4E is a digital phase frequency detector which operates from 10 to 1300MHz. It is intended for usein low phase noise synthesizer applications.The combination of high frequency of operation along with its ultra low phase noise floor make possible synthesizerswith wide loop bandwidth and low N resulting in fast switching and very low phase noise. When used in conjunctionwith a differential loop amplifier, the HMC3716LP4E generates output voltages that can be used to phase lock a VCOto a reference oscillator.The device is packaged in a 24-pin, 4 x 4mm leadless QFN surface mount package with an exposed ground paddlefor improved RF and thermal performance.Applications Point-to-point radios Satellite communication systems Military applications Sonet clock generation

The HMC539ALP3/539ALP3E is a broadband5-bit GaAs IC digital attenuator in a low cost leadless surface mount package. This single positive control line per bit digital attenuator utilizes an offchip AC ground capacitor for near DC operation,making it suitable for a wide variety of RF and IFapplications. Covering DC to 4 GHz, the insertion loss is less than 0.7 dB typical. The attenuatorbit values are 0.25 (LSB), 0.5, 1, 2, and 4 dB for atotal attenuation of 7.75 dB. Attenuation accuracy isexcellent at ? 0.05 dB typical step error. The attenu-ator also features a high IIP3 of +62 dBm. Five TTL/CMOS control inputs are used to select each attenuation state. A single Vdd bias of +3V to +5V is required.Applications Cellular infrastructure ISM, MMDS, WLAN, WiMAX, WiBro Microwave radio and VSAT Test equipment and sensors

The HMC540SLP3E is a broadband 4-bit Silicon IC digital attenuator in a low cost leadless surface mount package. This single positive control line per bit digital attenuator utilizes off chip AC ground capacitors for near DC operation, making it suitable for a wide variety of RF and IF applications. Covering 0.1 to 8 GHz, the insertion loss is less than 1 dB typical. The attenuator bit values are 1 (LSB), 2, 4 and 8 dB for a total attenuation of 15 dB. Attenuation accuracy is excellent at ? 0.2 dB typical step error. The attenuator also features a IIP3 of +56dBm. Four TTL/CMOS control inputs are used to select each attenuation state. It can operate with a single Vdd ranging from +3.3V to 5V.APPLICATIONS Cellular Infrastructure ISM, MMDS, WLAN, WiMAX, WiBro Microwave Radio & VSAT Test Equipment and Sensors