The LTC6430-20 is a differential gain block amplifier designed to drive high resolution, high speed ADCs with excellent linearity beyond 1000MHz and with low associated output noise. The LTC6430-20 operates from a single 5V power supply and consumes only 850mW.In its differential configuration, the LTC6430-20 can directly drive the differential inputs of an ADC. Using 1:2 baluns, the device makes an excellent 50? wideband balanced amplifier. While using 1:1.33 baluns, the device creates a high fidelity 40MHz to 1000MHz 75? CATV amplifier.The LTC6430-20 is designed for ease of use, requiring a minimum of support components. The device is internally matched to 100? differential source/load impedance. On-chip bias and temperature compensation ensure consistent performance over environmental changes.The LTC6430-20 uses a high performance SiGe BiCMOS process for excellent repeatability compared with similar GaAs amplifiers. All A-grade LTC6430-20 devices are tested and guaranteed for OIP3 at 380MHz. The LTC6430-20 is housed in a 4mm ? 4mm, 24-lead, QFN package with an exposed pad for thermal management and low inductance. A single-ended 50? IF gain block with similar performance is also available, see the related LTC6431-20.Applications Differential ADC Driver Differential IF Amplifier OFDM Signal Chain Amplifier 50? Balanced IF Amplifier 75? CATV Amplifier 700MHz to 800MHz LTE Amplifier Low Phase Noise Clock or LO Amplifier

Demonstration circuit 2085 supports the LTC2000 and LTC2000A, a high speed, high dynamic range family of DACs. It was specially designed for applications that require differential DC coupled outputs. DC2085 supports the complete family of the LTC2000 including 16, 14 and 11 bit parts. Companion Board : Stratix board

The LTC3880/LTC3880-1 are dual, PolyPhase DC/DC synchronous step-down switching regulator controllers with an I2C-based PMBus compliant serial interface. The controllers use a constant frequency, current mode architecture that is supported by LTpowerPlay? software development tool with graphical user interface (GUI).Switching frequency, output voltage, and device address can be programmed using external configuration resistors. Parameters can be set via the digital interface or stored in EEPROM. Voltage, current, internal/external temperature and fault status can be read back through the bus interface. The LTC3880 incorporates a 5V linear regulator while the LTC3880-1 uses an external 5V supply for minimum power loss. See comparison to LTC3887 below. VOUT Start-Up Time Max VOUT0/1 Fast ADC Mode for 1 Parameter LTC3887/LTC3887-1 35ms 5.5V/5.5V No LTC3880/LTC3880-1 120ms 4V/5.4V No Applications High Current Distributed Power Systems Telecom, Datacom and Storage Systems Intelligent Energy Efficient Power Regulation

DC208A-A: Demo Board for the LTC1559 Backup Battery Controller with Fixed Output.

RF Amplifier Low Noise Amplifier, LNA

The HMC407MS8G & HMC407MS8GE are high?efficiency GaAs InGaP Heterojunction Bipolar?Transistor (HBT) MMIC Power amplifiers which?operate between 5 and 7 GHz. The amplifier requires?no external matching to achieve operation and is?thus truly 50 Ohm matched at input and output. The?amplifier is packaged in a low cost, surface mount?8 leaded package with an exposed base for improved?RF and thermal performance. The amplifier?provides 15 dB of gain, +29 dBm of saturated power?at 28% PAE from a +5V supply voltage. Power down?capability is available to conserve current consumption?when the amplifier is not in use.Applications UNII HiperLAN

The HMC415LP3(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 4.9 and 5.9 GHz. The amplifier is packaged in a low cost, leadless surface mount package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +26 dBm of saturated power, and 34% PAE from a +3V supply voltage. Vpd can be used for full power down or RF output power/current control. For +15 dBm OFDM output power (64 QAM, 54 Mbps), the HMC415LP3(E) achieves an error vector magnitude (EVM) of 3.7% meeting 802.11a linearity requirements.Applications 802.11a WLAN HiperLAN WLAN Access Points UNII & ISM Radios

The HMC384LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with integrated resonator, negative resistance device, varactor diode, and buffer amplifier. The VCO?s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator?s monolithic structure. Power output is 3.5 dBm typical from a 3V supply voltage. The voltage controlled oscillator is packaged in a low cost leadless QFN 4x4 mm surface mount package.APPLICATIONS Wireless Infrastructure Industrial Controls Test Equipment Military

The HMC390LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering 3.55 to 3.9 GHz, the VCO?s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator?s monolithic structure. Power output is 4.7 dBm typical from a single supply of 3V @ 42 mA. The voltage controlled oscillator is packaged in a low cost leadless QFN 4?4 mm surface mount package.APPLICATIONS Wireless Local Loop (WLL) VSAT & Microwave Radio Test Equipment & Industrial Controls Military

The HMC429LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with an integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering 4.45 to 5.0 GHz, the VCO?s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator?s monolithic structure. Power output is 4 dBm typical from a single supply of 3V @ 30mA. The voltage controlled oscillator is packaged in a low cost leadless QFN 4x4 mm surface mount package.APPLICATIONS 802.11a, HiperLAN WLAN VSAT, UNII & Microwave Radio Test Equipment & Industrial Controls Military