The HMC1061LC5 is a silicon germanium (SiGe), monolithic, fully differential, dual rank, track-and-hold amplifier that provides unprecedented bandwidth and dynamic range performance to wideband sampled signal systems. The track-and-hold amplifier offers precision signal sampling over an 18 GHz bandwidth, with 9-bit to 10-bit linearity from dc to beyond 5 GHz input frequency, 1.45 mV noise, and <70 fs random aperture jitter.The HMC1061LC5 can be clocked to 4 GSPS with minimal dynamic range loss. The track-and-hold amplifier can be used to expand the bandwidth and/or high frequency linearity of high speed analog to digital conversion and signal acquisition systems. Wideband data acquisition systems with multi GHz required bandwidth for a variety of applications, such as software defined radio, radar systems, electronic warfare (EW), electronic intelligence (ELINT), and automated test equipment (ATE).Applications RF ATE applications Digital sampling oscilloscopes RF demodulation systems Digital receiver systems High speed peak detectors Software defined radio Radar, electronic counter measures (ECM), and electronic intelligence systems High speed digital-to-analog converter (DAC) deglitching

The HMC1063LP3E is a compact I/Q MMIC mixer in a leadless ?Pb free? SMT package, which can be used as either an Image Reject Mixer or a Single Sideband Upconverter. The mixer utilizes two standard Hittite double balanced mixer cells and a 90 degree hybrid fabricated in a GaAs Schottky diode process. A low frequency quadrature hybrid was used to produce a 1000 MHz LSB IF output. This product is a much smaller alternative to hybrid style Image Reject Mixers and Single Sideband Upconverter assemblies. The HMC1063LP3E eliminates the need for wire bonding and allows the use of surface mount manufacturing techniques.APPLICATIONS Point-to-Point and Point-to-Multi-Point Radio Military Radar, EW & ELINT Satellite Communications Sensors

The HMC1065LP4E is a compact GaAs MMIC Image Reject Low Noise Converter in a leadless RoHS compliant SMT package. This device provides a small signal conversion gain of 13 dB with 17 dBc of image rejection, and -2 dBm Input IP3. The HMC1065LP4E utilizes an RF LNA followed by an I/Q mixer which is driven by an active X2 multiplier. IF1 and IF2 mixer outputs are provided and an external 90? hybrid is needed to select the required sideband. The I/Q mixer topology reduces the need for filtering of the unwanted sideband. The HMC1065LP4E is a much smaller alternative to hybrid style image reject downconverter assemblies and it eliminates the need for wire bonding by allowing the use of surface mount manufacturing techniques.APPLICATIONS Point-to-Point & Point-to-Multi-Point Radio Satellite Communications Sensors

The HMC7144LC4 is a broadband driver amplifier for electro-absorption modulated lasers (EML) and supports data-rates up to 28.3 Gbps to meet the 100Gb Ethernet system requirements. The part provides the module designers scalable power dissipation for varying drive voltage characteristics of different modulators and the power consumption of the module can be set as low as 0.12W to 0.5W at 1.5Vpp and 2.2Vpp outputs amplitudes, respectively. The HMC7144LC4 supports wide range of supply voltages from 3.5V to 6V and delivering excellent time domain performance. The driver incorporates the unique feature, peak-detector with reference, which enables the continuous output amplitude monitoring without the need for an external high-frequency circuitry. The output amplitude and cross-point can be adjusted via control pins. The input and output are 50 Ohms matched and used AC coupled. The HMC7144LC4 is in robust leadless 4x4mm ceramic surface mountable package.APPLICATIONS Operation up to 28.3 Gbps Low DC Power Dissipation: 0.12W for 1.5Vpp swing @ 3.5V supply 0.50W for 2.3Vpp swing @ 6V supply Adjustable Output Amplitude from 1.2Vpp to 2.3Vpp Integrated Peak Detector 24 Lead Ceramic 4x4mm SMT Package: 16 mm2

The HMC7229LS6 is a four stage, gallium arsenide (GaAs),pseudomorphic high electron mobility transfer (pHEMT),monolithic microwave integrated circuit (MMIC), 1 W poweramplifier, with an integrated temperature compensated on-chippower detector that operates between 37 GHz to 40 GHz. TheHMC7229LS6 provides 24 dB of gain and 32 dBm of saturatedoutput power at 18% PAE at 39 GHz from a 6 V supply. With anexcellent IP3 of 40 dBm, the HMC7229LS6 is ideal for linearapplications such as high capacity, point to point or multipointradios or VSAT/SATCOM applications demanding 32 dBm ofefficient saturated output power. The radio frequency (RF)input/outputs are internally matched and dc blocked for ease ofintegration into higher level assemblies. The HMC7229LS6 ishoused in a ceramic, 6 mm ? 6 mm, high frequency, air cavitypackage that exhibits low thermal resistance and is compatiblewith surface-mount manufacturing techniques.Applications Point to point radios Point to multipoint radios Very small aperture terminal (VSAT) and satellite communications (SATCOM)

The HMC760LC4B is a SiGe monolithic, fully differential, single rank, track-and-hold (T/H) that provides unprecedented bandwidth and dynamic-range performance to wideband sampled signal systems. The T/H offers precision signal sampling over 5 GHz bandwidth, with 9 to 10-bit linearity from DC to 5 GHz input frequency, 0.9 mV noise, and <70 fs random aperture jitter. The device can be clocked to 4 GS/s with minimal dynamic range loss. The T/H can be used to expand the bandwidth and/or high-frequency linearity of high-speed A/D conversion and signal acquisition systems.APPLICATIONS RF ATE Applications Digital Sampling Oscilloscopes RF Demodulation Systems Digital Receiver Systems High Speed Peak Detectors Software Defined Radio Radar, ECM & ELINT Systems High Speed DAC De-Glitching

The HMC835LP6GE is a low noise, wide band, Fractional-N PLL that features an integrated VCO with a fundamental frequency of 2020 to 4100 MHz, and an integrated VCO Output Divider (divide by 2/4/6/.../60/62) that together enable the HMC835LP6GE to generate frequencies from 33 MHz to 4100 MHz. Integrated Phase Detector (PD) and a deltasigma modulator capable of operating at up to 100 MHz enable wider loop-bandwidths, faster frequency changes along with excellent spectral performance.Two independent RF outputs, with independent gain control, enable the HMC835LP6GE to distribute identical frequency and phase signals to multiple destinations, at optimal signal levels tailored to each output.External VCO input, allows the HMC835LP6GE to lock external VCOs, and enables cascaded LO architectures for MIMO radio applications. Two separate Charge Pump (CP) outputs enable separate loop filters optimized for both integrated and external VCOs, and seamless switching between integrated or external VCOs during operation. Programmable RF output phase feature can further phase adjust and synchronize multiple HMC835LP6GEs enabling scalable MIMO and beam-forming radio architectures.Additional features include configurable output mute function that mutes RF outputs during frequency changes, Exact Frequency Mode that enables the HMC835LP6GE to generate fractional frequencies with 0 Hz frequency error, and the ability to synchronously change frequencies without changing the phase of the output signal.Applications MIMO Radio Architectures Cellular Infrastructure Cellular backhaul Communications Test Equipment CATV Equipment Phased Array Applications? DDS Replacement

The ADRF5021 is a general-purpose single-pole, double-throw (SPDT) switch manufactured using a silicon process. It comes in a 3 mm ? 3 mm, 20-terminal land grid array (LGA) package and provides high isolation and low insertion loss from 9 kHz to 30 GHz.This broadband switch requires dual supply voltages, +3.3 V and ?2.5 V, and provides CMOS/LVTTL logic-compatible control.Applications Test instrumentation Microwave radios and very small aperture terminals (VSATs) Military radios, radars, electronic counter measures (ECMs) Broadband telecommunications systems

The ADRF5024 is a reflective, single-pole double-throw (SPDT) switch manufactured in the silicon process.This switch operates from 100 MHz to 44 GHz with better than 1.7 dB of insertion loss and 35 dB of isolation. The ADRF5024 has an radio frequency (RF) input power handling capability of 27 dBm for both the through path and hot switching.The ADRF5024 draws a low current of 14 ?A on the positive supply of +3.3 V and 120 ?A on negative supply of ?3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)compatible controls.The ADRF5024 is pin-compatible with the ADRF5025, low frequency cutoff version, which operates from 9 kHz to 44 GHz.The ADRF5024 RF ports are designed to match a characteristic impedance of 50 ?. For ultrawideband products, impedance matching on the RF transmission lines can further optimize high frequency insertion loss and return loss characteristics. Refer to the Electrical Specifications section, Typical Performance Characteristics section, and Applications Information section for more details.The ADRF5024 comes in a 2.25 mm ? 2.25 mm, 12-terminal, RoHS-compliant, land grid array (LGA) package and can operate between ?40?C to +105?C.The ADRF5024-EP supports defense and aerospace applications (AQEC).Applications Industrial scanners Test and instrumentation Cellular infrastructure: 5G mmWave Military radios, radars, electronic counter measures (ECMs) Microwave radios and very small aperture terminals (VSATs)

The ADRF5025 is a reflective single-pole double-throw (SPDT) switch, manufactured in silicon process.This switch operates from 9 kHz to 44 GHz with better than 1.6 dB of insertion loss and 35 dB of isolation. The ADRF5025 has an radio frequency (RF) input power handling capability of 27 dBm for both the through path and hot switching.The ADRF5025 draws a low current of 14 ?A on the positive supply of +3.3 V and 120 ?A on negative supply of ?3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible controls.The ADRF5025 is pin compatible with the ADRF5024, low frequency cutoff version, which operates from 100 MHz to 44 GHz.The ADRF5025 RF ports are designed to match a characteristic impedance of 50 ?. For ultrawideband products, impedance matching on the RF transmission lines can further optimize high frequency insertion loss and return loss characteristics. Refer to the Electrical Specifications section, Typical Performance Characteristics section, and Applications Information section for more details.The ADRF5025 comes in a 2.25 mm ? 2.25 mm, 12-terminal, RoHS-compliant, land grid array (LGA) package and can operate from ?40?C to +105?C.Applications Industrial scanners Test and instrumentation Cellular infrastructure: 5G mmWave Military radios, radars, electronic counter measures (ECMs) Microwave radios and very small aperture terminals (VSATs)