Demonstration circuit 2350B features the LTC6813-1, 18-channel battery-stack monitor. Multiple boards can be linked through a 2-wire isolated serial interface (isoSPI™) to monitor a long series of cells in a stack. The DC2350B demo board also features reversible isoSPI enabling a redundant communication path. The PCB, components, and DuraClik connectors are optimized for low EMI susceptibility and emissions. The DC2350B can communicate to a PC by connecting a DC2792B dual master isoSPI together with DC2026C Linduino® One. The DC2026 must be loaded with the appropriate program (called a sketch) to control the battery-stack monitor IC and receive data through a USB serial port. The DC2026 provides a standard SPI interface which can be translated to isoSPI and then connected to a DC2350B isoSPI port (J4 or J5 connector). The DC2792B companion board provides two SPI-isoSPI channels for reversible operation.

RF Amplifier dig Variable-Gain

Data Acquisition ADCs/DACs - Specialised IC Var Resolution R/D Converter

RF Switch ICs GaAs MMIC SP4T Non-Reflective, DC-20

RF Amplifier upscreen part for Space

Digital to Analog Converters - DAC CMOS CONVERTER IC

RF Amplifier Low Noise Amplifier, LNA

The HMC407MS8G & HMC407MS8GE are high?efficiency GaAs InGaP Heterojunction Bipolar?Transistor (HBT) MMIC Power amplifiers which?operate between 5 and 7 GHz. The amplifier requires?no external matching to achieve operation and is?thus truly 50 Ohm matched at input and output. The?amplifier is packaged in a low cost, surface mount?8 leaded package with an exposed base for improved?RF and thermal performance. The amplifier?provides 15 dB of gain, +29 dBm of saturated power?at 28% PAE from a +5V supply voltage. Power down?capability is available to conserve current consumption?when the amplifier is not in use.Applications UNII HiperLAN

The HMC415LP3(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 4.9 and 5.9 GHz. The amplifier is packaged in a low cost, leadless surface mount package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +26 dBm of saturated power, and 34% PAE from a +3V supply voltage. Vpd can be used for full power down or RF output power/current control. For +15 dBm OFDM output power (64 QAM, 54 Mbps), the HMC415LP3(E) achieves an error vector magnitude (EVM) of 3.7% meeting 802.11a linearity requirements.Applications 802.11a WLAN HiperLAN WLAN Access Points UNII & ISM Radios

The HMC384LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with integrated resonator, negative resistance device, varactor diode, and buffer amplifier. The VCO?s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator?s monolithic structure. Power output is 3.5 dBm typical from a 3V supply voltage. The voltage controlled oscillator is packaged in a low cost leadless QFN 4x4 mm surface mount package.APPLICATIONS Wireless Infrastructure Industrial Controls Test Equipment Military