Attenuators 5 dB LSB 6-Bit dig atten SMT

RF Switch ICs GaAs MMIC SP4T Non-Reflective, DC-20

Digital to Analog Converters - DAC CMOS CONVERTER IC

RF Amplifier Low Noise Amplifier, LNA

The HMC407MS8G & HMC407MS8GE are high?efficiency GaAs InGaP Heterojunction Bipolar?Transistor (HBT) MMIC Power amplifiers which?operate between 5 and 7 GHz. The amplifier requires?no external matching to achieve operation and is?thus truly 50 Ohm matched at input and output. The?amplifier is packaged in a low cost, surface mount?8 leaded package with an exposed base for improved?RF and thermal performance. The amplifier?provides 15 dB of gain, +29 dBm of saturated power?at 28% PAE from a +5V supply voltage. Power down?capability is available to conserve current consumption?when the amplifier is not in use.Applications UNII HiperLAN

The HMC384LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with integrated resonator, negative resistance device, varactor diode, and buffer amplifier. The VCO?s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator?s monolithic structure. Power output is 3.5 dBm typical from a 3V supply voltage. The voltage controlled oscillator is packaged in a low cost leadless QFN 4x4 mm surface mount package.APPLICATIONS Wireless Infrastructure Industrial Controls Test Equipment Military

The HMC390LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering 3.55 to 3.9 GHz, the VCO?s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator?s monolithic structure. Power output is 4.7 dBm typical from a single supply of 3V @ 42 mA. The voltage controlled oscillator is packaged in a low cost leadless QFN 4?4 mm surface mount package.APPLICATIONS Wireless Local Loop (WLL) VSAT & Microwave Radio Test Equipment & Industrial Controls Military

The HMC429LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with an integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering 4.45 to 5.0 GHz, the VCO?s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator?s monolithic structure. Power output is 4 dBm typical from a single supply of 3V @ 30mA. The voltage controlled oscillator is packaged in a low cost leadless QFN 4x4 mm surface mount package.APPLICATIONS 802.11a, HiperLAN WLAN VSAT, UNII & Microwave Radio Test Equipment & Industrial Controls Military

The HMC505LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with an integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering 6.8 to 7.4 GHz, the VCO?s phase noise performance is excellent over temperature, shock and vibration due to the oscillator?s monolithic structure. Power output is +11 dBm typical from a single supply of +3V @ 80 mA. The voltage controlled oscillator is packaged in a leadless QFN 4x4 mm surface mount package.APPLICATIONS VSAT & Microwave Radio Test Equipment & Industrial Controls Military

The HMC439QS16G(E) is a digital phase-frequency detector intended for use in low noise phase-locked loop applications for inputs from 10 to 1300 MHz. Its combination of high frequency of operation along with its ultra low phase noise floor make possible synthesizers with wide loop bandwidth and low N resulting in fast switching and very low phase noise. When used in conjunction with a differential loop amplifier, the HMC439QS16G(E) generate output voltages that can be used to phase lock a VCO to a reference oscillator. The device is packaged in a low cost, surface mount 16 lead QSOP package with an exposed base for improved RF and thermal performance.APPLICATIONS Point-to-Point Radios Satellite Communication Systems Military Applications Sonet Clock Generation