The HMC8205BF10 is a gallium nitride (GaN) broadband power amplifier delivering 45.5 dBm (35 W) with 38% power added efficiency (PAE) across an instantaneous bandwidth of 0.3 GHz to 6 GHz. No external matching is required to achieve full band operation. Additionally, no external inductor is required to bias the amplifier. Also, dc blocking capacitors for the RFIN and RFOUT pins are integrated into the HMC8205BF10.The HMC8205BF10 is ideal for pulsed or continuous wave(CW) applications, such as military jammers, wirelessinfrastructure, radar, and general-purpose amplification.The HMC8205BF10 amplifier is a 10-lead ceramic leaded chip carrier (LDCC).The HMC8205BCHIPS is a gallium nitride (GaN), broadbandpower amplifier that delivers 45.5 dBm (35 W) with 40% poweradded efficiency (PAE) across an instantaneous bandwidth of0.4 GHz to 6 GHz. No external matching is required to achievefull band operation. No external inductor is required to bias theamplifier. In addition, dc blocking capacitors for the RFIN andRFOUT pins are integrated into the HMC8205BCHIPS.The HMC8205BCHIPS is ideal for pulsed or continuous wave(CW) applications, such as military jammers, wirelessinfrastructure, radar, and general-purpose amplification.APPLICATIONS Military jammers Commercial and military radar Power amplifier stage for wireless infrastructure? Test and measurement equipment

The HMC832A is a 3.3 V, high performance, wideband, fractional-N, phase-locked loop (PLL) that features an integrated voltage controlled oscillator (VCO) with a fundamental frequency of 1500 MHz to 3000 MHz and an integrated VCO output divider (divide by 1, 2, 4, 6, ? 62) that enables the HMC832A to generate continuous frequencies from 25 MHz to 3000 MHz. The integrated phase detector (PD) and ?-? modulator, capable of operating at up to 100 MHz, permit wider loop bandwidths and faster frequency tuning with excellent spectral performance.Industry leading phase noise and spurious performance, across all frequencies, enable the HMC832A to minimize blocker effects, and to improve receiver sensitivity and transmitter spectral purity. A low noise floor (?160 dBc/Hz) eliminates any contribution to modulator/mixer noise floor in transmitter applications.The HMC832A is footprint compatible to the market leading HMC830 PLL with an integrated VCO. It features 3.3 V supply and an innovative programmable performance technology that enables the HMC832A to tailor current consumption and corresponding noise floor performance to individual applications by selecting either a low current consumption mode or a high performance mode for an improved noise floor performance.Additional features of the HMC832A include 12 dB of RF output gain control in 1 dB steps; an output mute function to automatically mute the output during frequency changes when the device is not locked; selectable output return loss; programmable differential or single-ended outputs, with the ability to select either output in single-ended mode; and a ?-? modulator exact frequency mode that enables users to generate output frequencies with 0 Hz frequency error; and a register configurable 3.3 V or 1.8 V serial port interface (SPI).Applications Cellular infrastructure Microwave radios WiMax, WiFi Communications test equipment CATV equipment DDS replacement Military Tunable reference sources for spurious-free performance

The HMC8415LP6GE is a gallium nitride (GaN), power amplifier, delivering 40 W (46 dBm) with more than 37.5% power added efficiency (PAE) across a bandwidth of 9 GHz to 10.5 GHz.The HMC8415LP6GE is ideal for pulsed applications, such as wireless weather, marine, and military radar applications.APPLICATIONS Weather radars Marine radars Military radars

The HMC8500PM5E is a gallium nitride (GaN), broadbandpower amplifier delivering 10 W (40 dBm), typical, with up to 55% power added efficiency (PAE) across an instantaneousbandwidth of 0.01 GHz to 2.8 GHz, at an input power of 30 dBm. The typical gain flatness is 3 dB at small signal levels.The HMC8500PM5E is ideal for pulsed or continuous wave(CW) applications, such as wireless infrastructure, radars,public mobile radios, and general-purpose amplification.The HMC8500PM5E amplifier is externally tuned using lowcost, surface-mount components and is available in a compactLFCSP package.Note that, throughout this data sheet, multifunction pins, such as RFIN/VGG, are referred to either by the entire pin name or by a single function of the pin, for example, RFIN, when only that function is relevantAPPLICATIONS Extended battery operation for public mobile radios Power amplifier stage for wireless infrastructures Test and measurement equipment Commercial and military radars General-purpose transmitter amplification

The HMC881A is a monolithic microwave integrated circuit (MMIC) low-pass filter that features a user-selectable cutoff frequency. The cutoff frequency can be varied from 2.4 GHz to 4 GHz by applying a single analog tuning voltage between 0 V and 14 V. This low-pass filter provides a low 3 dB insertion loss, 16.5 dB return loss, and 1.35 ? f3dB stopband attenuation of >20 dB. This tunable filter can be used as a much smaller alternative to physically large switched filter banks and cavity tuned filters. The HMC881A has excellent microphonics due to the monolithic design, and provides a dynamically adjustable solution in advanced communications applications. The low-pass tunable filter is packaged in a RoHS compliant 5 mm ? 5 mm LFCSP package.Applications Testing and measurement equipment Military radar and electronic warfare/electronic countermeasures (ECMs) Satellite communication and space Industrial and medical equipment

The HMC892ALP5E is a tunable band-pass filter that features auser selectable pass-band frequency. The 3 dB filter bandwidth isapproximately 8.7%. The 20 dB filter bandwidth is approximately23.8%. The center frequency can be varied between 3.45 GHzand 6.25 GHz by applying an analog tuning voltage between 0 Vand 14 V.This tunable filter can be used as a smaller alternative tophysically large switched filter banks and cavity tuned filters.The HMC892ALP5E has excellent microphonics due to themonolithic design and provides a dynamically adjustablesolution in advanced communications applications. Applications Test and measurement equipment Military radar and electronic warfare (EW)/electronic countermeasures (ECM) Satellite communications (SATCOM) and space Industrial and medical equipment

The HMC908A is a compact, gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), inphase/quadrature (I/Q) downconverter in a leadless, RoHS compliant ceramic leadless chip carrier. This device provides a small signal conversion gain of 11 dB with a noise figure of 2 dB and 25 dB of image rejection at 100 MHz. The HMC908A utilizes a low noise amplifier (LNA) followed by an image rejection mixer that is driven by a local oscillator (LO) buffer amplifier. The image rejection mixer eliminates the need for a filter following the LNA, and removes thermal noise at the image frequency. I and Q mixer outputs are provided and an external 90? hybrid is needed to select the required sideband. The HMC908A is a much smaller alternative to hybrid style image rejection mixer downconverter assemblies, and it eliminates the need for wire bonding by allowing the use of surface-mount manufacturing techniques.Applications Point to point radios Point to multipoint radios and very small aperture terminals (VSATs) Test equipment and sensors Military end use

The HMC951A is a compact gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), in-phase quadrature (I/Q) downconverter in a RoHS compliant package that operates from 5.6 GHz to 8.6 GHz. This device provides a small signal conversion gain of 13 dB with a noise figure of 2 dB and an image rejection of 32 dBc. The HMC951A uses a low noise amplifier (LNA) followed by an image mixer that is driven by a local oscillator (LO) buffer amplifier. The image reject mixer eliminates the need for a filter following the LNA and removes thermal noise at the image frequency. The IF1 and IF2 mixer outputs are provided and an external 90? hybrid is needed to select the required sideband. The I/Q mixer topology reduces the need for filtering of unwanted sideband. The HMC951A is a smaller alternative to hybrid style, single sideband (SSB) downconverter assemblies, and it eliminates the need for wire bonding by allowing the use of surface-mount manufacturing techniques.The HMC951A is available in 4 mm ? 4 mm, 24-lead lead frame chip scale package (LFCSP) and operates over the ?40?C to +85?C temperature range. An evaluation board for the HMC951A is also available upon request. Applications Point to point and point to multipoint radios Military radars, electronic warfare, and electronic intelligence Satellite communications Sensors

The HMC973ALP3E is an absorptive Voltage VariableAttenuator (VVA) which operates from 0.5 to 5 GHzand is ideal in designs where an analog DC controlsignal must be used to control RF signal levels overa 26 dB amplitude range. It features a shunt-typeattenuator controlled by an analog voltage, Vctrl.The HMC973ALP3E is an unidirectional device withoptimum linearity performance achieved when the RFinput signal is applied to the RFIN package lead. TheHMC973ALP3E is housed in a RoHS compliant 3x3mm QFN leadless package.Applications Point-to-point radio Cellular/3G & WiMAX/4G infrastructure Test instrumentation Microwave sensors? Military, ECM & radar

The EV-21569-SOM with low-cost evaluation and rapid prototyping of the ADSP-2156× Family (ADSP-21562/21563/21565/21566/21567/21569) of SHARC+ audio processors. It features the processor, memory, and power portions of the design and provides an easy-to-use plug-n-play reference design with all the key interfaces made available on three connectors for marrying to either the EV-SOMCRR-EZKIT carrier board or a custom carrier board. The EV-21569-SOM and EV-SOMCRR-EZKIT boards may be purchased as a bundle (EV-21569-EZKIT), providing fast and easy evaluation of the processor core and system peripherals/interfaces. The EV-21569-SOM module requires the CrossCore® Embedded Studio (CCES) development tools to enable developers to achieve faster time to market. The development environment aids advanced application code development and debug, such as: Create, compile, assemble, and link application programs written in C++, C, and assembly Load, run, step, halt, and set breakpoints in application programs Read and write data and program memory Read and write core and peripheral registers When used without the EV-SOMCRR-EZKIT carrier board, the EV-21569-SOM board requires an external in-circuit emulator (ICE-1000 or ICE-2000) be connected to the JTAG header.