The HMC8100LP6JE is a highly integrated IF receiver chip that converts radio frequency (RF) input signals ranging from 800 MHz to 4000 MHz down to a single ended intermediate frequency (IF) signal of 140 MHz at its output. The IF receiver chip is housed in a compact 6 mm x 6 mm LFCSP package and supports complex modulations up to 1024 QAM. The HMC8100LP6JE device includes two VGAs, three power detectors, a programmable AGC block, and selected integrated bandpass filters with 14 MHz, 28 MHz, 56 MHz, and 112 MHz bandwidth. The HMC8100LP6JE also supports baseband IQ interfaces after the mixer so that the chips can be used in the full ODU configuration.The HMC8100LP6JE supports all of the standard microwave frequency bands from 6 to 42 GHz.Applications Point to point communications Satellite communications Wireless microwave backhaul systemsPlease also view complimentary product HMC8200, Intermediate Frequency Transmitter 800 MHz - 4000 MHz.

The HMC833LP6GE is a low noise, wide band, Fractional-N Phase-Locked-Loop (PLL) that features an integrated Voltage Controlled Oscillator (VCO) with a fundamental frequency of 1500 MHz - 3000 MHz, and an integrated VCO Output Divider (divide by 1/2/4/6.../60/62) and doubler, that together allow the HMC833LP6GE to generate frequencies from 25 MHz to 6000 MHz. The integrated Phase Detector (PD) and delta-sigma modulator, capable of operating at up to 100 MHz, permit wider loop-bandwidths with excellent spectral performance.The HMC833LP6GE features industry leading phase noise and spurious performance, across all frequencies, that enable it to minimize blocker effects, and improve receiver sensitivity and transmitter spectral purity. The superior noise floor (< -170 dBc/Hz) makes the HMC833LP6GE an ideal source for a variety of applications - such as; LO for RF mixers, a clock source for high-frequency data-converters, or a tunable reference source for ultra-low spurious applications.Additional features of the HMC833LP6GE include RF output power control from 0 to 9 dB (3 dB steps), output Mute function, and a delta-sigma modulator Exact Frequency Mode which enables users to generate output frequencies with 0 Hz frequency error.Applications Cellular Infrastructure Microwave Radio WiMax, WiFi Communications Test Equipment CATV Equipment DDS Replacement Military Tunable Reference Source for?Spurious- Free Performance

The HMC1019ALP4E is a broadband 5-bit GaAs IC digital attenuator in a low cost leadless surface mount package. Covering 0.1 to 30.0 GHz, the insertion loss is less than 4.0 dB typical. The attenuator bit values are 0.5 (LS B), 1, 2, 4, 8 for a total attenuation of 15.5 dB. Attenuation accuracy is excellent at ?0.3 dB typical step error with an IIP3 of +45 dBm. The control interface is CMOS/TTL compatible and accepts a three wire serial input. The HMC1019ALP4E features a user selectable power up state and a serial output port for cascading other Analog Devices serial controlled components.APPLICATIONS Fiber Optics & Broadband Telecom Microwave Radio & VSAT Military Radios, Radar & ECM Space Applications Sensors Test & Measurement Equipment

The HMC345ALP3E is a broadband non-reflective GaAs MESFET SP4T switch in a low cost leadless surface mount packages. Covering DC to 8 GHz, this switch offers high isolation and low insertion loss. This switch also includes an on board binary decoder circuit which reduces the required logic control lines to two. The switch operates using a positive control voltage of 0/+5V, and requires a fixed bias of +5V.* Blocking capacitors are required at ports RFC and RF1, 2, 3, & 4. Their value will determine the lowest transmission frequency.APPLICATIONSThis switch is suitable for usage in DC - 8.0 GHz 50-Ohm or 75-Ohm systems: Broadband Fiber Optics Switched Filter Banks Wireless below 8 GHz

The HMC3716LP4E is a digital phase frequency detector which operates from 10 to 1300MHz. It is intended for usein low phase noise synthesizer applications.The combination of high frequency of operation along with its ultra low phase noise floor make possible synthesizerswith wide loop bandwidth and low N resulting in fast switching and very low phase noise. When used in conjunctionwith a differential loop amplifier, the HMC3716LP4E generates output voltages that can be used to phase lock a VCOto a reference oscillator.The device is packaged in a 24-pin, 4 x 4mm leadless QFN surface mount package with an exposed ground paddlefor improved RF and thermal performance.Applications Point-to-point radios Satellite communication systems Military applications Sonet clock generation

The HMC539ALP3/539ALP3E is a broadband5-bit GaAs IC digital attenuator in a low cost leadless surface mount package. This single positive control line per bit digital attenuator utilizes an offchip AC ground capacitor for near DC operation,making it suitable for a wide variety of RF and IFapplications. Covering DC to 4 GHz, the insertion loss is less than 0.7 dB typical. The attenuatorbit values are 0.25 (LSB), 0.5, 1, 2, and 4 dB for atotal attenuation of 7.75 dB. Attenuation accuracy isexcellent at ? 0.05 dB typical step error. The attenu-ator also features a high IIP3 of +62 dBm. Five TTL/CMOS control inputs are used to select each attenuation state. A single Vdd bias of +3V to +5V is required.Applications Cellular infrastructure ISM, MMDS, WLAN, WiMAX, WiBro Microwave radio and VSAT Test equipment and sensors

The HMC540SLP3E is a broadband 4-bit Silicon IC digital attenuator in a low cost leadless surface mount package. This single positive control line per bit digital attenuator utilizes off chip AC ground capacitors for near DC operation, making it suitable for a wide variety of RF and IF applications. Covering 0.1 to 8 GHz, the insertion loss is less than 1 dB typical. The attenuator bit values are 1 (LSB), 2, 4 and 8 dB for a total attenuation of 15 dB. Attenuation accuracy is excellent at ? 0.2 dB typical step error. The attenuator also features a IIP3 of +56dBm. Four TTL/CMOS control inputs are used to select each attenuation state. It can operate with a single Vdd ranging from +3.3V to 5V.APPLICATIONS Cellular Infrastructure ISM, MMDS, WLAN, WiMAX, WiBro Microwave Radio & VSAT Test Equipment and Sensors

The HMC618ALP3E is a GaAs pHEMT MMIC Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 1.2 - 2.2 GHz. The amplifier has been optimized to provide 0.75 dB noise figure, 19 dB gain and +36 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC618ALP3E shares the same package and pinout with the HMC617LP3E 0.55 - 1.2 GHz LNA. The HMC618ALP3E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. The HMC618ALP3E offers improved noise figure versus the previously released HMC375LP3(E) and the HMC382LP3(E).Applications Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femto Cells Public Safety Radio

The HMC7357 is a three-stage GaAs pHEMT MMIC Medium Power Amplifier that operates between 5.5 and 8.5 GHz. The amplifier provides 29 dB of gain and +35 dBm of saturated output power at 34% PAE from a +8V supply. With an excellent Output IP3 of +41.5 dBm, the HMC7357 is ideal for linear applications such as high capacity point-to-point and point-to-multi-point radios or VSAT/SATCOM applications demanding +35 dBm of efficient saturated output power. The RF I/Os are internally matched to 50 Ohms for ease of use. The HMC7357 is packaged in a leadless 5x5 mm plastic surface mount package and is compatible with surface mount manufacturing techniques.Applications Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM

The HMC7885 is a 32 W gallium nitride (GaN), monolithicmicrowave integrated circuit (MMIC) power amplifier (PA)module that operates between 2 GHz and 6 GHz, and is providedin an 18-lead hermetically sealed module. The amplifier typicallyprovides 21 dB of small signal gain and 45 dBm of saturated radiofrequency (RF) output power. The amplifier draws 2200 mA ofquiescent current (IDD) from a 28 V dc supply. The RF input andoutput are dc blocked and matched to 50 ? for ease of use.Applications Test and measurement equipment Communications Electronic warfare (EW) Military Traveling wave tube (TWT) replacements SATCOM Commercial and military radars