The HMC574AMS8E is low-cost SPDT switchin 8-lead MSOP packages for use in transmit/receive applications which requires very lowdistortion at high incident power levels. Thedevice can control signals from DC to 3 GHz andis especially suited for Cellular/3G infrastructure,WiMAX and WiBro applications with only 0.3 dBtypical insertion loss. The design provides 5 wattpower handling performance and +63 dBm thirdorder intercept at +8 Volt bias. RF1 and RF2 arereflective shorts when ?Off.?Applications Cellular/3G infrastructure Private mobile radio handsets WLAN, WiMAX and WiBro Automotive telematics Test equipment

The HMC618ALP3E is a GaAs pHEMT MMIC Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 1.2 - 2.2 GHz. The amplifier has been optimized to provide 0.75 dB noise figure, 19 dB gain and +36 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC618ALP3E shares the same package and pinout with the HMC617LP3E 0.55 - 1.2 GHz LNA. The HMC618ALP3E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. The HMC618ALP3E offers improved noise figure versus the previously released HMC375LP3(E) and the HMC382LP3(E).Applications Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femto Cells Public Safety Radio

The HMC641ALC4 is a broadband non-reflective GaAs pHEMT SP4T switch in a compact 4x4 mm ceramic package. Covering DC to 20 GHz, this switch offers high isolation, low insertion loss and on-chip termination of isolated ports. This switch also includes an on board binary decoder circuit which reduces the number of required logic control lines from four to two. The HMC641ALC4 is controlled with 0/ -5V logic, exhibits fast switching speed and consumes much less DC current than pin diode based solutions.APPLICATIONS Telecom Infrastructure Microwave Radio & VSAT Military & Space Hybrids Test Instrumentation SATCOM & Sensors

The HMC7885 is a 32 W gallium nitride (GaN), monolithicmicrowave integrated circuit (MMIC) power amplifier (PA)module that operates between 2 GHz and 6 GHz, and is providedin an 18-lead hermetically sealed module. The amplifier typicallyprovides 21 dB of small signal gain and 45 dBm of saturated radiofrequency (RF) output power. The amplifier draws 2200 mA ofquiescent current (IDD) from a 28 V dc supply. The RF input andoutput are dc blocked and matched to 50 ? for ease of use.Applications Test and measurement equipment Communications Electronic warfare (EW) Military Traveling wave tube (TWT) replacements SATCOM Commercial and military radars

The HMC797APM5E is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between DC and 22 GHz. The amplifier provides 15 dB of gain, +29 dBm of output power at 1 dB gain compression, +31 dBm of saturated output power, and 25% PAE while requiring 400 mA from a +10 V supply. With up to +41 dBm of output IP3, the HMC797APM5E is ideal for high linearity applications in military and space as well as test equipment where high order modulations are used. This versatile PA exhibits a positive gain slope from 2 to 20 GHz making it ideal for EW, ECM, Radar and test equipment applications. The HMC797APM5E amplifier I/Os are internally matched to 50 ? facilitating integration into mutli-chip-modules (MCMs), is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.Applications Test Instrumentation Military & Space Fiber Optics

The HMC802ALP3E is a broadband bidirectional 1-bitGaAs IC digital attenuator in a low cost leadless sur-face mount package. This single positive control linedigital attenuator utilizes off chip AC ground capac-itors for near DC operation, making it suitable for awide variety of RF and IF applications. Covering DCto 10 GHz, the insertion loss is less than 3 dB typicaland attenuation accuracy is excellent at ?0.6 dB typ-ical. The attenuator also features a high IIP3 of +55dBm. One TTL/CMOS control input is used to selectthe attenuation state and a single Vdd bias of +5V isrequired. Applications Test equipment and sensors ISM, MMDS, WLAN,?WiMAX, WiBro Microwave radio & VSAT Cellular infrastructure

The HMC8205BF10 is a gallium nitride (GaN) broadband power amplifier delivering 45.5 dBm (35 W) with 38% power added efficiency (PAE) across an instantaneous bandwidth of 0.3 GHz to 6 GHz. No external matching is required to achieve full band operation. Additionally, no external inductor is required to bias the amplifier. Also, dc blocking capacitors for the RFIN and RFOUT pins are integrated into the HMC8205BF10.The HMC8205BF10 is ideal for pulsed or continuous wave(CW) applications, such as military jammers, wirelessinfrastructure, radar, and general-purpose amplification.The HMC8205BF10 amplifier is a 10-lead ceramic leaded chip carrier (LDCC).The HMC8205BCHIPS is a gallium nitride (GaN), broadbandpower amplifier that delivers 45.5 dBm (35 W) with 40% poweradded efficiency (PAE) across an instantaneous bandwidth of0.4 GHz to 6 GHz. No external matching is required to achievefull band operation. No external inductor is required to bias theamplifier. In addition, dc blocking capacitors for the RFIN andRFOUT pins are integrated into the HMC8205BCHIPS.The HMC8205BCHIPS is ideal for pulsed or continuous wave(CW) applications, such as military jammers, wirelessinfrastructure, radar, and general-purpose amplification.APPLICATIONS Military jammers Commercial and military radar Power amplifier stage for wireless infrastructure? Test and measurement equipment

The HMC832A is a 3.3 V, high performance, wideband, fractional-N, phase-locked loop (PLL) that features an integrated voltage controlled oscillator (VCO) with a fundamental frequency of 1500 MHz to 3000 MHz and an integrated VCO output divider (divide by 1, 2, 4, 6, ? 62) that enables the HMC832A to generate continuous frequencies from 25 MHz to 3000 MHz. The integrated phase detector (PD) and ?-? modulator, capable of operating at up to 100 MHz, permit wider loop bandwidths and faster frequency tuning with excellent spectral performance.Industry leading phase noise and spurious performance, across all frequencies, enable the HMC832A to minimize blocker effects, and to improve receiver sensitivity and transmitter spectral purity. A low noise floor (?160 dBc/Hz) eliminates any contribution to modulator/mixer noise floor in transmitter applications.The HMC832A is footprint compatible to the market leading HMC830 PLL with an integrated VCO. It features 3.3 V supply and an innovative programmable performance technology that enables the HMC832A to tailor current consumption and corresponding noise floor performance to individual applications by selecting either a low current consumption mode or a high performance mode for an improved noise floor performance.Additional features of the HMC832A include 12 dB of RF output gain control in 1 dB steps; an output mute function to automatically mute the output during frequency changes when the device is not locked; selectable output return loss; programmable differential or single-ended outputs, with the ability to select either output in single-ended mode; and a ?-? modulator exact frequency mode that enables users to generate output frequencies with 0 Hz frequency error; and a register configurable 3.3 V or 1.8 V serial port interface (SPI).Applications Cellular infrastructure Microwave radios WiMax, WiFi Communications test equipment CATV equipment DDS replacement Military Tunable reference sources for spurious-free performance

The HMC8415LP6GE is a gallium nitride (GaN), power amplifier, delivering 40 W (46 dBm) with more than 37.5% power added efficiency (PAE) across a bandwidth of 9 GHz to 10.5 GHz.The HMC8415LP6GE is ideal for pulsed applications, such as wireless weather, marine, and military radar applications.APPLICATIONS Weather radars Marine radars Military radars

The HMC8500PM5E is a gallium nitride (GaN), broadbandpower amplifier delivering 10 W (40 dBm), typical, with up to 55% power added efficiency (PAE) across an instantaneousbandwidth of 0.01 GHz to 2.8 GHz, at an input power of 30 dBm. The typical gain flatness is 3 dB at small signal levels.The HMC8500PM5E is ideal for pulsed or continuous wave(CW) applications, such as wireless infrastructure, radars,public mobile radios, and general-purpose amplification.The HMC8500PM5E amplifier is externally tuned using lowcost, surface-mount components and is available in a compactLFCSP package.Note that, throughout this data sheet, multifunction pins, such as RFIN/VGG, are referred to either by the entire pin name or by a single function of the pin, for example, RFIN, when only that function is relevantAPPLICATIONS Extended battery operation for public mobile radios Power amplifier stage for wireless infrastructures Test and measurement equipment Commercial and military radars General-purpose transmitter amplification