The HMC596LP4(E) is a low-cost 4x2 switch matrix in a leadless QFN 4x4 mm surface mount package for use in Satellite/DBS, LNBs and multiswitches from 200 to 3000 MHz. A positive voltage controlled 4 bit decoder is integrated on the switch. The switches may be used in either 75 ohm or 50 ohm systems.Both switch outputs (OP1 & OP2) can independently select any of the four inputs (HH, HL, VH, VL) or simultaneously select the same inputs. Note that the switch is bi-directional and input/output functionality may be interchanged. All data presented was measured in a 50 ohm (input/output) system.APPLICATIONS DBS LNBs & Multiswitches Cable Modem/CATV Cellular Systems

The HMC326MS8G & HMC326MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers which operate between 3.0 and 4.5 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifier provides 21 dBof gain and +26 dBm of saturated power from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use. Internal circuit matching was optimized to provide greater than 40% PAE.Applications Microwave Radios Broadband Radio Systems Wireless Local Loop Driver Amplifier

The HMC414MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 2.2 and 2.8 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +30 dBm of saturated power at 32% PAE from a +5V supply voltage. The amplifier can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/ current control.Applications BLUETOOTH MMDS

The HMC385LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering 2.25 to 2.5 GHz, the VCO?s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator?s monolithic structure. Power output is 4.5 dBm typical from a single supply of 3V @ 35mA. The voltage controlled oscillator is packaged in a low cost leadless QFN 4x4 mm surface mount package.APPLICATIONS Wireless Infrastructure Industrial Controls Test Equipment Military

The HMC386LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with integrated resonator, negative resistance device, varactor diode, and buffer amplifiers. Covering 2.6 to 2.8 GHz, the VCO?s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator?s monolithic structure. Power output is 5 dBm typical from a single supply of 3V @ 35mA. The voltage controlled oscillator is packaged in a low cost leadless QFN 4x4 mm surface mount package.APPLICATIONS Wireless Infrastructure Industrial Controls Test Equipment Military

The HMC437MS8G(E) is a low noise Divide-by-3 Static Divider utilizing InGaP GaAs HBT technology in a low cost 8 lead surface mount plastic package. This device operates from DC (with a square wave input) to 7 GHz input frequency from a single +5V DC supply. The low additive SSB phase noise of -153 dBc/Hz at 100 kHz offset helps the user maintain good system noise performance.APPLICATIONS UNII, Point-to-Point & VSAT Radios 802.11a & HiperLAN WLAN Fiber Optic Cellular/3G Infrastructure

The HMC440QS16G(E) is an integer-n synthesizer that incorporates a 10 to 1300 MHz digital Phase-Frequency Detector with 10 to 2800 MHz 5-Bit frequency counter (continuous division from 2 to 32) in miniature 16 lead QSOP plastic packages. It is intended for use in low phase noise offset-synthesizer app-lications.The HMC440QS16G(E) combines high frequency operation along with ultra low phase noise floor making possible synthesizers with wide loop bandwidth and low N resulting in fast settling and very low phase noise. When used in conjunction with a differential loop amplifier, the HMC440QS16G(E) generates an output voltage that can be used to phase lock a VCO to a reference oscillator.Applications Satellite Communication Systems? Point-to-Point Radios? Military Applications? Sonet Clock Generation Test Equipment

ADPA7005AEHZThe ADPA7005 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), 32 dBm saturated output power (PSAT), >1 W, power amplifier, with an integrated temperature compensated, on-chip power detector that operates between 18 GHz and 44 GHz. The ADPA7005 provides 15.5 dB of small signal gain and approximately 32 dBm of PSAT at 32 GHz from a 5 V supply (see Figure 26 in the data sheet). The ADPA7005 has an output IP3 of 40 dBm between 24 GHz to 34 GHz and is ideal for linear applications such as electronic countermeasure and instrumentation applications requiring >30 dBm of efficient PSAT. The RF input and outputs are internally matched and dc blocked for ease of integration into higher level assemblies. The ADPA7005 is packaged in a 7 mm ? 7 mm, 18?terminal ceramic leadless chip carrier with heat sink (LCC_HS) that exhibits low thermal resistance and is compatible with surface-mount manufacturing techniques.ADPA7005CHIPThe ADPA7005CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 20 GHz to 44 GHz. The amplifier provides 17 dB of small signal gain, 31 dBm output power for 1 dB compression (P1dB), and a typical output third-order intercept (IP3) of 41 dBm. The ADPA7005CHIP requires 1200 mA from a 5 V supply on the supply voltage (VDD) and features inputs and outputs that are internally matched to 50 ?, facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm wire bonds that are at least 0.31 mm long.Applications Military and space Test instrumentation Communications

The ADL5321 is a broadband, linear driver RF amplifier that operates at frequencies from 2.3 GHz to 4.0 GHz. The device can be used in a wide variety of wired and wireless applications, including ISM, WLL, PCS, GSM, CDMA, and W-CDMA.The ADL5321 operates with a 5 V supply voltage and a supply current of 90 mA.The ADL5321 is fabricated on the GaAs HBT process. The device is packaged in a low cost SOT-89 that uses an exposed paddle for excellent thermal impedance. It operates from ?40?C to +105?C, and a fully populated evaluation board is available.The ADL5320 is a companion part to the ADL5321 that operates at similar performance from 400 MHz to 2700 MHz.

The AD8312 is a complete, low cost subsystem for the measurement of RF signals in the frequency range of 50 MHz to 3.5 GHz. It has a typical dynamic range of 45 dB and is intended for use in a wide variety of cellular handsets and other wireless devices. It provides a wider dynamic range and better accuracy than possible using discrete diode detectors. In particular, its temperature stability is excellent over the full operating range of ?40?C to +85?C.Its high sensitivity allows measurement at low power levels, thus reducing the amount of power that needs to be coupled to the detector. It is essentially a voltage-responding device, with a typical signal range of 1.25 mV to 224 mV rms or ?45 dBm to 0 dBm, referencing 50 ?.For convenience, the signal is internally ac-coupled, using a 5 pF capacitor to a load of 3 k? in shunt with 1.3 pF. This high-pass coupling, with a corner at approximately 16 MHz, determines the lowest operating frequency. Therefore, the source may be dc grounded.The AD8312 output, VOUT, increases from close to ground to about 1.2 V because the input signal level increases from 1.25 mV to 224 mV. A capacitor may be connected between the VOUT and CFLT pins when it is desirable to increase the time interval over which averaging of the input waveform occurs.The AD8312 is available in a 6-ball, 1.0 mm ? 1.5 mm, wafer-level chip scale package and consumes 4.2 mA from a 2.7 V to 5.5 V supply.Applications Cellular handsets (GSM, CDMA, WCDMA) RSSI and TSSI for wireless terminal devices Transmitter power measurement