2SK3666-3-TB-E

DATASHEET

Sanyo Semiconductor

JFET, N CH, 30V, 0.01A, SOT23; Breakdown Voltage Vbr:30V; Zero Gate Voltage Drain Current Idss Min:600µA; Zero Gate Voltage Drain Current Idss Max:6mA; Gate-Source Cutoff Voltage Vgs(off) Max:2.2V; Transistor Case Style:SOT-23; Transistor Type:JFET; No. of Pins:3 Pin; Operating Temperature Max:150°C; MSL:-; Current Idss Max:6mA; Current Idss Min:600µA; Drain Source Voltage Vds:30V; No. of Pins:3Pins; Power Dissipation Pd:200mW; Termination Type:Surface Mount Device; Transistor Polarity:N Channel; Zero Gate Voltage Drain Current Idss:600µA to 6mA

$0.00 - * $0.15

Distributors

Currency:

Distributor	SKU	Stock	MOQ	1	10	50	100	1000	10000	Purchase
element14 APAC	2SK3666-3-TB-E	1632	5		* $0.13	* $0.13	* $0.10	* $0.09	* $0.09	Buy
Farnell	2SK3666-3-TB-E	814520	3000						* $0.08	Buy
Newark	2SK3666-3-TB-E	569	6000	$0.00	$0.00	$0.00	$0.00	$0.00	$0.00	Buy