HGT1S20N60A4S9A

onsemi

IGBT, D2-PAK, 600V; DC Collector Current:70A; Collector Emitter Saturation Voltage Vce(on):2.7V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2018); Alternate Case Style:TO-263; Current Ic @ Vce Sat:20A; Current Ic Continuous a Max:70A; Current Temperature:25°C; Fall Time tf:32ns; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:0.43°C/W; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:290W; Pulsed Current Icm:280A; Rise Time:12ns; Termination Type:Surface Mount Device; Transistor Polarity:N Channel; Voltage Vces:600V

* $8.34 - * $8.38
Distributor SKU Stock MOQ 1 10 50 100 1000 10000 Purchase
DigiKey HGT1S20N60A4S9A-ND 0 Buy
element14 APAC HGT1S20N60A4S9A 1 * $8.38 * $8.38 * $5.68 * $4.23 * $3.75 * $3.75 Buy
Farnell HGT1S20N60A4S9A 1 * $8.34 * $8.34 * $5.66 * $4.21 * $3.73 * $3.73 Buy
Mouser Electronics 512-HGT1S20N60A4S9A 0 1 Buy
Quarktwin Electronic Components HGT1S20N60A4S9A 16476 10 Buy

Technical Specifications

ROHS Compliance Not Compliant