IRF6616TR1
Infineon Technologies AG
Category: Transistors
MOSFET N DIRECTFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0037ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:2.8W; Transistor Case Style:DirectFET MX; No. of Pins:7Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 3 - 168 hours; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:3765pF; Current Id Max:19A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +150°C; Packaging:Cut Tape; Pulse Current Idm:150A; Reverse Recovery Time trr Typ:15ns; SMD Marking:6616; Termination Type:Surface Mount Device; Voltage Vds:40V; Voltage Vds Typ:40V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
* $1.33 - * $1.69Distributors
Technical Specifications
Lead Free Status | No |
ROHS Compliance | Not Compliant |