OVP and EMI Protected, Precision, Low Noise and Bias Current Single Op Amp Features: Low offset voltage: 60 μV maximum at 25°C (8-lead and 14-lead SOIC) Low offset voltage drift: 1 μV/°C maximum (8-lead and 14-lead SOIC) Low input bias current: 1 nA maximum at 25°C Low voltage noise density: 8 nV/√Hz typical at 1 kHz Large signal voltage gain (AVO): 100 dB minimum over full supply voltage and operating temperature Input overvoltage protection to 32 V above and below the supply voltage rail Integrated EMI filter 70 dB typical rejection at 1000 MHz 90 dB typical rejection at 2400 MHz Rail-to-rail output swing Low supply current: 500 μA typical per amplifier Wide bandwidth Gain bandwidth product (AV = 100): 3.5 MHz typical Unity-gain crossover (AV = 1): 3.5 MHz typical −3 dB bandwidth (AV = 1): 6 MHz typical Dual-supply operation Specified at ±5 V to ±15 V, operates over ±2.5 V to ±18 V Unity-gain stable No phase reversal Long-term offset voltage drift (10,000 hours): 2 μV typical Temperature hysteresis: 2 μV typical

Zero Drift, High Voltage, Low Power, Programmable Gain Instrumentation Amplifier Features: Optimized for ADC synchronization Low power: 22 mW (±12 V supplies) 12 binary gain steps from 1/16 V/V to 128 V/V 3 scaling gains: 1 V/V, 1.25 V/V, and 1.375 V/V ±60 V protected input multiplexer Excellent dc precision Low input offset voltage: ±14 μV maximum Low input offset voltage drift: ±0.08 μV/°C maximum Gain calibration via ROM Low gain drift: ±1 ppm/°C maximum High CMRR: 116 dB minimum, G = 1 V/V Low input bias current: ±1.5 nA maximum High input impedance Integrated input EMI filtering Wide input supply range: ±5 V to ±28 V Dedicated output amplifier supplies 7 GPIO ports with special functions Sequential chip select mode External multiplexer control Excitation current sources SPI port with checksum (CRC) support Internal fault detection Wire break test currents On-chip test multiplexer 28-lead, 5 mm × 5 mm LFCSP, 24-lead TSSOP Specified temperature range: −40°C to +105°C

Zero Drift, High Voltage, Low Power, Programmable Gain Instrumentation Amplifier Features: Optimized for ADC synchronization Low power: 22 mW (±12 V supplies) 12 binary gain steps from 1/16 V/V to 128 V/V 3 scaling gains: 1 V/V, 1.25 V/V, and 1.375 V/V ±60 V protected input multiplexer Excellent dc precision Low input offset voltage: ±14 μV maximum Low input offset voltage drift: ±0.08 μV/°C maximum Gain calibration via ROM Low gain drift: ±1 ppm/°C maximum High CMRR: 116 dB minimum, G = 1 V/V Low input bias current: ±1.5 nA maximum High input impedance Integrated input EMI filtering Wide input supply range: ±5 V to ±28 V Dedicated output amplifier supplies 7 GPIO ports with special functions Sequential chip select mode External multiplexer control Excitation current sources SPI port with checksum (CRC) support Internal fault detection Wire break test currents On-chip test multiplexer 28-lead, 5 mm × 5 mm LFCSP, 24-lead TSSOP Specified temperature range: −40°C to +105°C

Rail-to-Rail, Fast, Low Power 2.5 V to 5.5 V, Single-Supply TTL/CMOS Comparator Features: Fully specified rail-to-rail at VCC = 2.5 V to 5.5 V Input common-mode voltage from −0.2 V to VCC + 0.2 V Low glitch TTL-/CMOS-compatible output stage 40 ns propagation delay Low power 1 mW at 2.5 V Shutdown pin Programmable hysteresis Power supply rejection > 60 dB −40°C to +125°C operation

Rail-to-Rail, Fast, Low Power 2.5 V to 5.5 V, Single-Supply TTL/CMOS Comparator Features: Fully specified rail-to-rail at VCC = 2.5 V to 5.5 V Input common-mode voltage from −0.2 V to VCC + 0.2 V Low glitch TTL-/CMOS-compatible output stage 40 ns propagation delay Low power 1 mW at 2.5 V Shutdown pin Programmable hysteresis Power supply rejection > 60 dB −40°C to +125°C operation

1 MHz to 1.2 GHz VGA with 30 dB Gain Control Range Features: Voltage-controlled amplifier/attenuator Operating frequency: 1 MHz to 1.2 GHz Optimized for controlling output power High linearity: OIP3 47 dBm @ 100 MHz Output noise floor: −149 dBm/Hz @ maximum gain Input impedance: 50 Ω Output impedance: 20 Ω Wide gain-control range: 30 dB Linear-in-dB gain control function: 40 mV/dB Single-supply voltage: 4.75 V to 5.25 V

Low Input Bias Current, Wide BW JFET Precision Dual Op Amp Features: Low Noise 6 nV/√Hz Low Offset Voltage: 100 µV Max Low Input Bias Current 10 pA Max Fast Settling: 600 ns to 0.01% Low Distortion Unity Gain Stable No Phase Reversal Dual-Supply Operation: ±5 V to ±13 V

Dual Low Power, High Speed JFET Operational Amplifier Features: Low supply current: 250 μA/amp maximum High slew rate: 9 V/μs Bandwidth: 3.5 MHz typical Low offset voltage: 1 mV maximum @ 25°C Low input bias current: 20 pA maximum @ 25°C CMRR: 90 dB typical Fast settling time Unity gain stable

High Common-Mode Voltage, Programmable Gain Difference Amplifier Features: High common-mode input voltage range ±120 V at VS = ±15 V Gain range 0.1 to 100 Operating temperature range: −40°C to +85°C Supply voltage range Dual supply: ±2.25 V to ±18 V Single supply: 4.5 V to 36 V Excellent ac and dc performance Offset temperature stability RTI: 10 μV/°C maximum Offset: ±1.5 V mV maximum CMRR RTI: 75 dB minimum, dc to 500 Hz, G = +1

3000 V/S, 35mW Current Feedback Quad Amplifier Features: High speed 250 MHz -3 dB bandwidth (G = +1) 3000 V/µs slew rate 21 ns settling time to 0.1% 1.8 ns rise time for 2 V step Low power 3.5 mA/amp power supply Current (35 mW/amp) Single supply operation Fully specified for +5 V supply High output current of 50 mA Good video specifications (RL = 150 Ω, G = +2) Gain flatness 0.1 dB to 30 MHz 0.04% differential gain error 0.10° differential phase error Low distortion –78 dBc THD at 5 MHz –61 dBc THD at 20 MHz Available in a 14-lead SOIC