Bidirectional, Zero-Drift, Current Sense Amplifier Features: Typical 0.1 μV/°C offset drift Maximum ±400 μV voltage offset over full temperature range 2.7 V to 5.5 V power supply operating range Electromagnetic interference (EMI) filters Included High common-mode input voltage range −2 V to +70 V operating −4 V to +85 V survival Initial gain = 20 V/V Wide operating temperature range: −40°C to +125°C Bidirectional operation Available in 8-lead SOIC and 8-lead MSOP Common-mode rejection ratio (CMRR): 86 dB, dc to 10 kHz Qualified for automotive applications

High Performance, Low Power, Rail-to-Rail Precision Instrumentation Amplifier Features: Low power: 330 μA maximum quiescent current Rail-to-rail output Low noise and distortion 8 nV/√Hz maximum input voltage noise at 1 kHz 0.15 μV p-p RTI noise (G = 100) 0.5 ppm nonlinearity with 2 kΩ load (G = 1) Excellent ac specifications 80 dB minimum CMRR at 10 kHz (G = 1) 2.2 MHz bandwidth (G = 1) High precision dc performance (AD8422BRZ) 150 dB minimum CMRR (G = 1000) 0.04% maximum gain error (G = 1000) 0.3 μV/°C maximum input offset drift 0.5 nA maximum input bias current Wide supply range 4.6 V to 36 V single supply ±2.3 V to ±18 V dual supply Input overvoltage protection: 40 V from opposite supply Gain range: 1 to 1000 Available in 8-lead LFCSP, 8-lead MSOP, and 8-lead SOIC_N

Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Dual Operational Amplifier Features: Fast settling time: 500 ns to 0.1% Low offset voltage: 400 μV maximumLow input bias current:25 pA typical at VS = ±15 V Dual-supply operation: ±5 V to ±15 V Low noise: 8 nV/√Hz typical at f = 1 kHz Low distortion: 0.0005% No phase reversal Unity-gain stableAD8512-EP supports defense and aerospace applications (AQEC standard) Download AD8512-EP data sheet (pdf) Military temperature range (−55°C to +125°C) Controlled manufacturing baseline 1 assembly/test site 1 fabrication site Product change notification Qualification data available on requestV62/18919 DSCC Drawing Number

Low Power, Precision, Auto-Zero Op Amp Features: Low offset voltage: 13 μV maximum Input offset drift: 0.03 μV/°C Single-supply operation: 2.7 V to 5.5 V High gain, CMRR, and PSRR Low input bias current: 25 pA Low supply current: 180 μA

Digitally Programmable Sensor Signal Zero-Drift Amplifier Features: Very low offset voltage: 10 μV maximum over temperature Very low input offset voltage drift: 60 nV/°C maximum High CMRR: 96 dB minimum Digitally programmable gain and output offset voltage Single-wire serial interface Open and short wire fault detection Low-pass filtering Stable with any capacitive load See data sheet for additional features

Dual High Voltage, High Side Current Sense Amplifier Features: Two Independent Current Sense Amplifiers Wide Supply Range: 4V to 60V, 70V Absolute Maximum Low Offset Voltage: 450µV Maximum Fast Response: 1µs Response Time Gain Configurable with External Resistors Low Input Bias Current: 170nA Maximum PSRR: 110dB Minimum (6V to 60V) Output Current: 1mA Maximum Low Supply Current: 275µA per Amplifier, VS = 12V Specified for –40°C to 125°C Temperature Range Available in an 8-lead MSOP Package

Precision Zero Drift Current Sense Amplifier Features: Supply Range: 4V to 60V, 70V Maximum (LTC6102) 5V to 100V, 105V Maximum (LTC6102HV) ±10μV Input Offset Maximum ±50nV/°C Input Offset Drift Maximum Fast Response: 1μs Step Response Gain Configurable with Two Resistors Low Input Bias Current: 3nA Maximum PSRR 130dB Minimum Output Currents up to 1mA Operating Temperature Range: –40°C to 125°C Disable Mode (LTC6102-1 Only): 1μA Maximum Available in 8-Lead MSOP and 3mm × 3mm DFN Packages

Low Noise Quad Op Amp Features: Very Low-Noise, 5 nV/√Hz @ 1 kHz Max  Excellent Input Offset Voltage, 0.4 mV Max  Low Offset Voltage Drift, 2 µV/°C Max  Very High Gain, 1000 V/mV Min  Outstanding CMR, 110 dB Min  Slew Rate, 2 V/µs Typ  Gain-Bandwidth Product, 6 MHz Typ  Industry Standard Quad Pinouts  Available in Die Form 

Programmable Transimpedance, Current to Bits Receiver Module Features: High performance, current input, data acquisition μModule that includes a TIA, analog filter, ADC driver, and ADC 3 selectable TZ settings: 2 k, 20 k, and 200 k Internal 1.8 V LDO for the ADC All passive components including supply decoupling Small form factor: 12.00 mm × 6.00 mm CSP_BGA Operation from a single 3.3 V supply Full-scale input current to 800 μA (TZ = 2 k) Fast input overload recovery High analog input current to 40 mAAnalog filter for noise reduction and antialias filtering Selectable 1.0 MHz and 100 MHz LPF bandwidth Low input referred current noise: 16 pA rms TZ = 200 k, 65,536 averages, 1 MHz analog filter Supports input pulse widths down to 10 ns 14-bit ADC with sample rate up to 125 MSPS Serial LVDS data output SPI control interface Quiescent power: 546 mW, LDO enabled Temperature range: 40C to +85C

10 MHz, 14.5 nV/Hz, Rail-to-Rail I/O, Zero Input Crossover Distortion Amplifier Features: Power supply rejection ratio (PSRR): 98 dB minimum  Common-mode rejection ratio (CMRR): 95 dB minimum Offset voltage: 120 μV maximum Single-supply operation: 2.7 V to 5.5 V  Dual-supply operation: ±1.35 V to ±2.75 V  Wide bandwidth: 10 MHz  Rail-to-rail input and output  Low noise 2 μV p-p from 0.1 Hz to 10 Hz  14.5 nV/√Hz at 1 kHz  Very low input bias current: 2 pA maximum