Low Noise Amplifier SMT, 350 - 550 MHz Features: Noise Figure: ≤1 dB Output IP3: +38 dBm Gain: 17 dB Very Stable Gain vs. Supply & Temp Single Supply: +5V @ 104 mA 50 Ohm Matched Output

RF Power Detector with Buffered Output and >40dB Dynamic Range Features: Internal Schottky Diode RF Detector with Two Input Power Ranges: LTC5505-1, –28dBm to 18dBm LTC5505-2, –32dBm to 12dBm Wide Input Frequency Range: 300MHz to 3GHz (LTC5505-1); 300MHz to 3.5GHz (LTC5505-2) Temperature Compensated Buffered Detector Output Wide VCC Range of 2.7V to 6V Low Operating Current: 0.5mA Low Shutdown Current: <2µA Low Profile (1mm) ThinSOT™ Package

1kHz-3GHz High Signal Level Active Mixer Features: Broadband RF, LO and IF Operation High Input IP3: >20dBm from 30MHz to 900MHz +17dBm at 1900MHz Typical Conversion Gain: 1dB SSB Noise Figure: 11dB at 900MHz 14dB at 1900MHz Integrated LO Buffer: Insensitive to LO Drive Level Single-Ended or Differential LO Drive High LO-RF Isolation Enable Function 4.5V to 5.25V Supply Voltage Range 4mm x 4mm QFN Package

Medium Power Amplifier SMT, 17.5 - 25.5 GHz Features: Gain: 13 dB Saturated Power: +23 dBm @ 26% PAE Supply Voltage: +5V 50 Ohm Matched Input/Output RoHS Compliant 3x3 mm SMT package

1 Watt Power Amplifier SMT, 0.4 - 2.2 GHz Features: Output IP3: +48 dBm 22.5 dB Gain @ 400 MHz 9 dB Gain @ 2100 MHz 53% PAE @ +31 dBm Pout +24 dBm CDMA2000 Channel Power@ -45 dBc ACP Single +5V Supply Integrated Power Control (VPD) QSOP16G SMT Package: 29.4 mm²

HMC474MP86 / HMC474SC70SiGe, HBT gain block amplifiers, SMT, dc to 6 GHz Features: Gain: 15 dB or 15.5 dB P1dB output power: 8 dB Output third-order intercept points (IP3s): 20 dBm or 22 dBm Cascadable 50 inputs/outputs Single supply: 3 V to 10 V Industry standard SC70 Package

Phase Detector / PLL Frequency Synthesizer Features: 400 MHz bandwidth 2.7 to 3.3 V power supply Separate charge pump supply (VP) allows extended tuning voltage in 3 V systems Programmable charge pump currents 3-wire serial interface Analog and digital lock detect Hardware and software power-down mode 104  MHz phase detectorADF4002-EP supports defense and aerospace applications (AQEC standard) Download ADF4002-EP data sheet (pdf) Military temperature range: −55°C to +125°C Controlled manufacturing baseline One assembly/test site One fabrication site Enhanced product change notification Qualification data available on request V62/11607 DSCC Drawing Number

46 dBm (40 W), 2.7 GHz to 3.5 GHz, GaN Power Amplifier Features: Frequency range: 2.7 GHz to 3.5 GHz POUT: 46 dBm typical with PIN = 21 dBm at 2.7 GHz to 3.1 GHz Power gain: 25 dB typical with PIN = 21 dBm at 2.7 GHz to 3.1 GHz Small signal gain: 34.5 dB typical at 2.7 GHz to 3.1 GHz PAE: 56% typical with PIN = 21 dBm at 2.7 GHz to 3.1 GHz Supply voltage: VDD = 50 V at IDQ = 300 mA with 10% duty cycle 32-lead, 5 mm × 5 mm LFCSP_CAV package

GaAs, pHEMT, MMIC,1/2 W, 20 GHz to 44 GHz, Power Amplifier Features: Output P1dB: 28 dBm (typical at 34 GHz to 44 GHz) PSAT: 30 dBm (typical at 20 GHz to 34 GHz) Gain: 15 dB (typical at 34 GHz to 44 GHz) IP3: 40 dBm (typical) Supply voltage: 5 V at 600 mA Die size: 2.75 mm × 1.805 mm × 0.1 mm

18 GHz to 44 GHz, GaAs, pHEMT, 32 dBm (>1 W), MMIC Power Amplifier Features:ADPA7005AEHZ Output P1dB: up to 31 dBm typical PSAT: up to 32 dBm typical Gain: up to 15.5 dB typical Output IP3: up to 42.5 dBm typical Supply voltage: 5 V at 1400 mA 50 matched input/output 18-terminal, 7 mm × 7 mm LCC_HS package Integrated power detectorADPA7005CHIP Output P1dB: 31 dBm typical at 20 GHz to 34 GHz PSAT: 32 dBm typical at 20 GHz to 34 GHz Gain: 17 dB typical at 20 GHz to 34 GHz Output IP3: 41 dBm typical at 20 GHz to 34 GHz Supply voltage: 5 V at 1200 mA maximum 50 Ω matched input/output Die size: 3.75 mm × 3.47 mm × 0.1 mm