The HMC479 devices are SiGe, heterojunction bipolar transistor (HBT) gain block MMIC, SMT amplifiers covering dc to 5 GHz. These amplifiers can be used as cascadable 50 Ω RF/IF gain stages as well as LO or PA drivers with up to 21 dBm output power. The HMC479 amplifiers offer 15 dB of gain with a 33 dBm or 34 dBm output IP3 at 850 MHz, while requiring only 72 mA from a single positive supply. The Darlington feedback topology results in reduced sensitivity to normal process variations and excellent gain stability over temperature, while requiring a minimal number of external bias components.Applications Cellular/PCS/3G  Fixed wireless and WLAN  CATV, cable modem, and direct broadcast satellite (DBS)  Microwave radio and test equipment

The HMC659LC5 is a GaAs MMIC PHEMT Distributed Power Amplifier which is housed in a leadless 5x5 mm RoHS compliant ceramic SMT package operating between DC and 15 GHz. The amplifier provides 19 dB of gain, +35 dBm output IP3 and +27.5 dBm of output power at 1 dB gain compression, while requiring 300mA from a +8V supply.Gain flatness is excellent at ±0.7 dB from DC - 15 GHz making the HMC659LC5 ideal for EW, ECM, Radar and test equipment applications. The HMC659LC5 amplifier I/Os are internally matched to 50 ohms with no external components. The HMC659LC5 is compatible with high volume surface mount manufacturing techniques.Applications Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics

The HMC764LP6CE is a fully functioned Fractional-N Phase-Locked-Loop (PLL) with an Integrated Voltage Controlled Oscillator (VCO). The input reference frequency range is 100 kHz to 220 MHz while the advanced delta-sigma modulator design in the fractional PLL allows both ultra-fine step sizes and very low spurious products. The highly integrated structure provides excellent phase noise performance over temperature, shock and process. The HMC764LP6CE is packaged in a leadless QFN 6 x 6 mm surface mount package. The output power is 15 dBm typical, making the HMC764LP6CE ideal for driving the LO port of many of Hittite’s Hi Linearity and I/Q mixer products.For theory of operation and register map refer to the 'PLLs w/ Integrated VCO - Microwave VCOs' Operating Guide.Applications VSAT Radio Point-to-Point / Multi-Point Radio Test Equipment & Industrial Control Military End-Use Phased Array Applications

The HMC770LP4BE is a GaAs pHEMT Differential Gain Block MMIC amplifier covering 40 MHz to 1 GHz and packaged in a 4x4 mm plastic QFN SMT package. This versatile amplifier can be used as a cascadable IF or RF gain stage in both 50 Ohm and 75 Ohm applications. The HMC770LP4BE delivers 16 dB gain, and +40 dBm output, with only 2.5 dB noise figure.Differential I/Os make this amplifier ideal for transimpedance and SAW filter applications, and in transceivers where the IF path must be handled differentially for improved noise performance. Evaluation PCBs are all available with either SMA (50Ω) or Type F (75Ω) connectors.Applications Cellular / PCS / 3G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment IF & RF Applications

The HMC992LP5E is an IF analog controlled variable gain amplifier composed of two identical voltage variable attenuators in combination with an InGaP HBT gain block MMIC amplifier which operates from 0.1 to 0.8 GHz, and can be controlled to provide anywhere from -10 dB attenuation, to 40 dB of gain. The HMC992LP5E delivers noise figure of 6 dB in its maximum gain state, with output IP3 of up to +40 dBm. The HMC992LP5E is housed in a RoHS compliant 5x5 mm QFN leadless package, and requires no external matching components.Applications Cellular/3G Infrastructure WiBro / WiMAX / 4G Microwave Radio & VSAT Test Equipment and Sensors IF & RF Applications

The HMC207AS8E is a miniature double- balanced mixer in an 8 lead plastic surface mount Small Outline IC (SOIC) package. This passive MMIC mixer is constructed of GaAs Schottky diodes and novel planar transformer baluns on the chip. The device can be used as an upconverter, downconverter, biphase modulator (de)modulator, or phase comparator. The consistent MMIC performance will improve system operation and assure regulatory compliance. The high LO suppression of 45 to 50 dB yields excellent carrier suppression for modulator applications.Applications Base Stations  Cable Modems  Portable Wireless

The HMC207AS8E is a miniature double- balanced mixer in an 8 lead plastic surface mount Small Outline IC (SOIC) package. This passive MMIC mixer is constructed of GaAs Schottky diodes and novel planar transformer baluns on the chip. The device can be used as an upconverter, downconverter, biphase modulator (de)modulator, or phase comparator. The consistent MMIC performance will improve system operation and assure regulatory compliance. The high LO suppression of 45 to 50 dB yields excellent carrier suppression for modulator applications.Applications Base Stations  Cable Modems  Portable Wireless

The HMC230MS8(E) is a broadband 3-bit positive control GaAs IC digital attenuator in 8 lead MSOP surface mount plastic package. Covering 0.75 to 2 GHz, the insertion loss is typically less than 2 dB. The attenuator bit values are 4 (LSB), 8, and 16 dB for a total attenuation of 28 dB. Accuracy is excellent at ±0.5 dB typical with an IIP3 of up to +48 dBm. Three bit control voltage inputs, toggled between 0 and +3 to +5 volts, are used to select each attenuation state at less than 50 uA each. A single Vdd bias of +3 to +5 volts applied through an external 5K Ohm resistor is required.Applications Cellular  PCS, ISM, MMDS  WLL Handset  Base Station Infrastructure

The HMC264 chip is a sub-harmonically pumped (x2) MMIC mixer with an integrated LO amplifier which can be used as an upconverter or downconverter. The chip utilizes a GaAs PHEMT technology that results in a small overall chip area of 1.28mm². The 2LO to RF isolation is excellent eliminating the need for additional filtering. The LO amplifier is a single bias (+3V to +4V) two stage design with only -4 dBm nominal drive requirement. All data is measured with the chip in a 50Ω test fixture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length <0.31 mm (<12 mils).APPLICATIONS Microwave Point-to-Point Radios LMDS SATCOM

The HMC311SC70(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT DC to 8 GHz amplifier. Packaged in an industry standard SC70, the amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO port of HMC mixers with up to +15 dBm output power. The HMC311SC70(E) offers 15 dB of gain and an output IP3 of +30 dBm while requiring only 54 mA from a +5V supply. The Darlington topology results in reduced sensitivity to normal process variations, and yields excellent gain stability over temperature while requiring a minimal number of external bias components.Applications Cellular / PCS / 3G WiBro / WiMAX / 4G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment