RF Amplifier lo Noise amp SMT, 2.1 - 2.9 GHz

The HMC311SC70(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT DC to 8 GHz amplifier. Packaged in an industry standard SC70, the amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO port of HMC mixers with up to +15 dBm output power. The HMC311SC70(E) offers 15 dB of gain and an output IP3 of +30 dBm while requiring only 54 mA from a +5V supply. The Darlington topology results in reduced sensitivity to normal process variations, and yields excellent gain stability over temperature while requiring a minimal number of external bias components.Applications Cellular / PCS / 3G WiBro / WiMAX / 4G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment

The HMC207AS8E is a miniature double- balanced mixer in an 8 lead plastic surface mount Small Outline IC (SOIC) package. This passive MMIC mixer is constructed of GaAs Schottky diodes and novel planar transformer baluns on the chip. The device can be used as an upconverter, downconverter, biphase modulator (de)modulator, or phase comparator. The consistent MMIC performance will improve system operation and assure regulatory compliance. The high LO suppression of 45 to 50 dB yields excellent carrier suppression for modulator applications.Applications Base Stations  Cable Modems  Portable Wireless

The HMC207AS8E is a miniature double- balanced mixer in an 8 lead plastic surface mount Small Outline IC (SOIC) package. This passive MMIC mixer is constructed of GaAs Schottky diodes and novel planar transformer baluns on the chip. The device can be used as an upconverter, downconverter, biphase modulator (de)modulator, or phase comparator. The consistent MMIC performance will improve system operation and assure regulatory compliance. The high LO suppression of 45 to 50 dB yields excellent carrier suppression for modulator applications.Applications Base Stations  Cable Modems  Portable Wireless

The HMC230MS8(E) is a broadband 3-bit positive control GaAs IC digital attenuator in 8 lead MSOP surface mount plastic package. Covering 0.75 to 2 GHz, the insertion loss is typically less than 2 dB. The attenuator bit values are 4 (LSB), 8, and 16 dB for a total attenuation of 28 dB. Accuracy is excellent at ±0.5 dB typical with an IIP3 of up to +48 dBm. Three bit control voltage inputs, toggled between 0 and +3 to +5 volts, are used to select each attenuation state at less than 50 uA each. A single Vdd bias of +3 to +5 volts applied through an external 5K Ohm resistor is required.Applications Cellular  PCS, ISM, MMDS  WLL Handset  Base Station Infrastructure

The HMC264 chip is a sub-harmonically pumped (x2) MMIC mixer with an integrated LO amplifier which can be used as an upconverter or downconverter. The chip utilizes a GaAs PHEMT technology that results in a small overall chip area of 1.28mm². The 2LO to RF isolation is excellent eliminating the need for additional filtering. The LO amplifier is a single bias (+3V to +4V) two stage design with only -4 dBm nominal drive requirement. All data is measured with the chip in a 50Ω test fixture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length <0.31 mm (<12 mils).APPLICATIONS Microwave Point-to-Point Radios LMDS SATCOM

The HMC311SC70(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT DC to 8 GHz amplifier. Packaged in an industry standard SC70, the amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO port of HMC mixers with up to +15 dBm output power. The HMC311SC70(E) offers 15 dB of gain and an output IP3 of +30 dBm while requiring only 54 mA from a +5V supply. The Darlington topology results in reduced sensitivity to normal process variations, and yields excellent gain stability over temperature while requiring a minimal number of external bias components.Applications Cellular / PCS / 3G WiBro / WiMAX / 4G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment

The HMC342 chip is a GaAs MMIC Low Noise Amplifier (LNA) which covers the frequency range of 13 to 25 GHz. The chip can easily be integrated into Multi-Chip Modules (MCMs) due to its small (2.14 mm²) size. The chip utilizes a GaAs PHEMT process offering 20 dB gain from a single bias supply of +3V @ 41 mA with a noise figure of 3.5 dB. All data is with the chip in a 50 ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length 0.31 mm (<12 mils).Applications Microwave Point-to-Point Radios  Millimeterwave Point-to-Point Radios  VSAT & SATCOM

The HMC561 is a x2 active broadband frequency multiplier chip utilizing GaAs PHEMT technology. When driven by a +5 dBm signal, the multiplier provides +17 dBm typical output power from 8 to 21 GHz and the Fo and 3Fo isolations are 15 dBc at 16 GHz. The HMC561 is ideal for use in LO multiplier chains for Pt to Pt & VSAT Radios yielding reduced parts count vs. traditional approaches. The low additivie SSB Phase Noise of -139 dBc/Hz at 100 kHz offset helps maintain good system noise performance.APPLICATIONS Clock Generation Applications: SONET OC-192 & SDH STM-64 Point-to-Point & VSAT Radios Test Instrumentation Military & Space

The HMC652LP2E / 653LP2E / 654LP2E / 655LP2E are a line of wideband fixed value SMT 50 Ohm matched attenuators which offer attenuation levels of 2, 3, 4 and 6 dB respectively. These passive attenuators are ideal for military, test equipment, and other wideband applications where extremely flat attenuation, and excellent VSWR vs. frequency are required.These wideband attenuators handle up to +25 dBm of input power, and are compatible with high volume surface mount manufacturing techniques.APPLICATIONS Fiber Optics Microwave Radio Military & Space Test & Measurement Scientific Instruments RF/Microwave Circuit Prototyping