The ADRF5024 is a reflective, single-pole double-throw (SPDT) switch manufactured in the silicon process.This switch operates from 100 MHz to 44 GHz with better than 1.7 dB of insertion loss and 35 dB of isolation. The ADRF5024 has an radio frequency (RF) input power handling capability of 27 dBm for both the through path and hot switching.The ADRF5024 draws a low current of 14 ?A on the positive supply of +3.3 V and 120 ?A on negative supply of ?3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)compatible controls.The ADRF5024 is pin-compatible with the ADRF5025, low frequency cutoff version, which operates from 9 kHz to 44 GHz.The ADRF5024 RF ports are designed to match a characteristic impedance of 50 ?. For ultrawideband products, impedance matching on the RF transmission lines can further optimize high frequency insertion loss and return loss characteristics. Refer to the Electrical Specifications section, Typical Performance Characteristics section, and Applications Information section for more details.The ADRF5024 comes in a 2.25 mm ? 2.25 mm, 12-terminal, RoHS-compliant, land grid array (LGA) package and can operate between ?40?C to +105?C.The ADRF5024-EP supports defense and aerospace applications (AQEC).Applications Industrial scanners Test and instrumentation Cellular infrastructure: 5G mmWave Military radios, radars, electronic counter measures (ECMs) Microwave radios and very small aperture terminals (VSATs)

The ADRF5025 is a reflective single-pole double-throw (SPDT) switch, manufactured in silicon process.This switch operates from 9 kHz to 44 GHz with better than 1.6 dB of insertion loss and 35 dB of isolation. The ADRF5025 has an radio frequency (RF) input power handling capability of 27 dBm for both the through path and hot switching.The ADRF5025 draws a low current of 14 ?A on the positive supply of +3.3 V and 120 ?A on negative supply of ?3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible controls.The ADRF5025 is pin compatible with the ADRF5024, low frequency cutoff version, which operates from 100 MHz to 44 GHz.The ADRF5025 RF ports are designed to match a characteristic impedance of 50 ?. For ultrawideband products, impedance matching on the RF transmission lines can further optimize high frequency insertion loss and return loss characteristics. Refer to the Electrical Specifications section, Typical Performance Characteristics section, and Applications Information section for more details.The ADRF5025 comes in a 2.25 mm ? 2.25 mm, 12-terminal, RoHS-compliant, land grid array (LGA) package and can operate from ?40?C to +105?C.Applications Industrial scanners Test and instrumentation Cellular infrastructure: 5G mmWave Military radios, radars, electronic counter measures (ECMs) Microwave radios and very small aperture terminals (VSATs)

The ADRF5043 is a nonreflective, SP4T switch manufactured in the silicon on insulator (SOI) process.The ADRF5043 operates from 9 kHz to 44 GHz with an insertion loss of lower than 2.5 dB and an isolation of higher than 36 dB. The device has a RF input power handling capability of 24 dBm for both through and terminated paths.The ADRF5043 requires a dual-supply voltage of +3.3 V and ?3.3 V. The device employs CMOS- and low voltage transistor to transistor logic (LVTTL)-compatible controls.The ADRF5043 has enable and logic select controls to feature all off state and port mirroring, respectively. The ADRF5043 is pin compatible with the ADRF5042 fast switching version, which operates from 100 MHz to 44 GHz.The ADRF5043 comes in a 24-terminal, 3 mm ? 3 mm, RoHS compliant, land grid array (LGA) package and can operate from ?40?C to +105?C.Applications Industrial Scanners Test instrumentation Cellular infrastructure?millimeterwave (mmWave) 5G Military radios, radars, electronic counter measures (ECMs) Microwave radios and very small aperture terminals (VSATs)

The ADRF5044 is a general-purpose, single-pole, four-throw (SP4T) switch manufactured using a silicon process. It comes in a 24-terminal land grid array (LGA) package and provides high isolation and low insertion loss from 100 MHz to 30 GHz.This broadband switch requires dual-supply voltages, +3.3 V and ?3.3 V, and provides complementary metal-oxide semiconductor (CMOS)/low voltage transistor-transistor logic (LVTTL) logic-compatible control.Applications Test instrumentation Microwave radios and very small aperture terminals (VSATs) Military radios, radars, and electronic counter measures (ECMs) Broadband telecommunications systems

The ADRF5549 is a dual-channel, integrated, RF front-end multichip module designed for time division duplexing (TDD) applications that operates from 1.8 GHz to 2.8 GHz. The ADRF5549 is configured in dual channels with a cascading, two-stage, low noise amplifier (LNA) and a high power, silicon single-pole, double-throw (SPDT) switch.In high gain mode, the cascaded two-stage LNA and switch offer a low noise figure of 1.4 dB and a high gain of 35 dB with an output third-order intercept point (OIP3) of 32 dBm typical.In low gain mode, one stage of the two-stage LNA is in bypass mode providing 17 dB of gain at a lower current of 35 mA. In power-down mode, the LNAs are turned off, and the device draws 12 mA.In transmit operation, when RF inputs are connected to a termination pin (TERM-ChA or TERM-ChB), the switch provides a low insertion loss of 0.6 dB and handles a long-term evolution (LTE) full lifetime average (9 dB peak to average ratio (PAR)) of 40 dBm and 43 dBm for a 9 dB PAR LTE single event (ApplicationsWireless InfrastructureTDD massive multiple input and multiple output (MIMO) and active antenna systemsTDD-based communication systems

The ADRF5740 is a silicon, 4-bit digital attenuator with 22 dB attenuation control range in 2 dB steps.The ADRF5740 operates from 10 MHz to 60 GHz with less than 3.3 dB of insertion loss and with ?(0.2 + 7.0% of attenuation state) of attenuation accuracy at 55 GHz. The ATTIN port of the ADRF5740 has an RF input power handling capability of 24 dBm average and 24 dBm peak for all states.The ADRF5740 requires a dual supply voltage of +3.3 V and ?3.3 V. The ADRF5740 features parallel mode control, and CMOS- and low voltage transistor to transistor logic (LVTTL)-compatible controls.The ADRF5740 RF ports are designed to match a characteristic impedance of 50 ?. The ADRF5740 comes in a 16-terminal, 2.5 mm ? 2.5 mm, RoHS compliant, land grid array (LGA) package and operates from ?40?C to +105?C.Applications Industrial scanners Test and instrumentation Cellular infrastructure: 5G millimeter wave Military radios, radars, electronic counter measures (ECMs) Microwave radios and very small aperture terminals (VSATs)

The ADRF6821 is a highly integrated, dual radio frequency (RF) input, zero intermediate frequency (IF)/low IF RFIC receiverwith a quadrature demodulator, digital step attenuator (DSA),IF linear amplifiers, an integrated, fractional-N phase-locked loop (PLL), and a low phase noise, multicore, voltage controlled oscillator (VCO). The RFIC is ideally suited for communication digital predistortion (DPD) systems.The high isolation 2:1 RF switch and on-chip wideband RFbalun enable the ADRF6821 to support two single-ended, 50 ? terminated RF inputs. A programmable attenuator ensures anoptimal differential RF input level to the high linearity demodulatorcore. The integrated attenuator offers an attenuation range of 15 dB with a step size of 1 dB. High linearity IF amplifiers follow the demodulator and provide an interface to the next componentin the chain, typically an analog-to-digital converter (ADC).The ADRF6821 offers two alternatives for generating thedifferential local oscillator (LO) input signal: internally viathe on-chip fractional-N synthesizer with low phase noiseVCOs or externally via a low phase noise LO signal. Theintegrated synthesizer enables continuous LO coverage from 450 MHz to 2800 MHz. The PLL reference input supports awide frequency range and includes integrated reference dividers before the phase frequency detector (PFD).When selected, the output of the internal fractional-N synthesizeris applied to a divide by 2, quadrature phase splitter. From theexternal LO path, a 2? LO signal can be used with the divide by 2,quadrature phase splitter to generate the quadrature LO inputs to the mixers.The ADRF6821 is fabricated using an advanced silicon germanium(SiGe), bipolar complementary metal oxide semiconductor(BiCMOS) process. It is available in a 56-lead, RoHS compliant,8 mm ? 8 mm LFCSP package with an exposed pad. Performanceis specified over the ?40?C to +105?C case temperature range.Applications Cellular W-CDMA/GSM/LTE DPD receivers? Microwave, point to point radios

The ADRV9008-2 is a highly integrated, RF agile transmit subsystem offering dual channel transmitters, observation path receiver, integrated synthesizers, and digital signal processing functions. The IC delivers a versatile combination of high performance and low power consumption demanded by 2G, 3G and 4G macro-cell base stations, and active antenna, applications.The transmitters use an innovative direct conversion modulator that achieves multi-carrier macro-base-station quality performance and very low power. In 3G/4G mode, the maximum large-signal bandwidth is 200MHz. In MC-GSM mode, which has higher in-band SFDR, the maximum large-signal bandwidth is 75MHz.The observation path consists of a wide bandwidth direct-conversion receiver with state-of-the-art dynamic range. The complete receive subsystem includes dc offset correction, quadrature correction, and digital filtering thus eliminating the need for these functions in the digital baseband. Several auxiliary functions such as ADCs, DACs, and GPIOs for PA and RF-front-end control are also integrated. The fully integrated phase locked loops (PLLs) provide high performance, low power fractional-N RF frequency synthesis for the transmitter and receiver sections. An additional synthesizer is used to generate the clocks needed for the converters, digital circuits, and the serial interface. Special precautions have been taken to provide the isolation demanded in high performance base station applications. All VCO and loop filter components are integrated.The high-speed JESD204B interface supports up to 12.288 Gbps lane rates resulting in two lanes per transmitter in the widest bandwidth mode and two lanes for the observation path receiver in the widest bandwidth mode. The core of the ADRV9008-2 can be powered directly from 1.3 V and 1.8 V regulators and is controlled via a standard 4 wire serial port. Comprehensive power-down modes are included to minimize power consumption in normal use. The ADRV9008-2 is packaged in a 12mm ? 12 mm, 196-ball chip scale ball grid array (CSP_BGA).

The ADRV9009 is a highly integrated, radio frequency (RF), agile transceiver offering dual transmitters and receivers, integrated synthesizers, and digital signal processing functions. The IC delivers a versatile combination of high performance and low power consumption demanded by 3G, 4G, and 5G macro cell time division duplex (TDD) base station applications.The receive path consists of two independent, wide bandwidth, direct conversion receivers with state-of-the-art dynamic range. The device also supports a wide bandwidth, time shared observation path receiver (ORx) for use in TDD applications. The complete receive subsystem includes automatic and manual attenuation control, dc offset correction, quadrature error correction (QEC), and digital filtering, thus eliminating the need?for these functions in the digital baseband. Several auxiliary functions, such as analog-to-digital converters (ADCs), digital-to-analog converters (DACs), and general-purpose inputs/outputs (GPIOs) for the power amplifier (PA), and RF front-end control are also integrated.In addition to automatic gain control (AGC), the ADRV9009 also features flexible external gain control modes, allowing significant flexibility in setting system level gain dynamically.The received signals are digitized with a set of four high dynamic range, continuous time ?-? ADCs that provide inherent antialiasing. The combination of the direct conversion architecture, which does not suffer from out of band image mixing, and the lack of aliasing, relaxes the requirements of the RF filters when compared to traditional intermediate frequency (IF) receivers.The transmitters use an innovative direct conversion modulator that achieves high modulation accuracy with exceptionally low noise.The observation receiver path consists of a wide bandwidth, direct conversion receiver with state-of-the-art dynamic range.The fully integrated phase-locked loop (PLL) provides high performance, low power, fractional-N RF frequency synthesis for the transmitter (Tx) and receiver (Rx) signal paths. An additional synthesizer generates the clocks needed for the converters, digital circuits, and the serial interface. A multichip synchronization mechanism synchronizes the phase of the RF local oscillator (LO) and baseband clocks between multiple ADRV9009 chips. Precautions are taken to provide the isolation required in high performance base station applications. All voltage controlled oscillators (VCOs) and loop filter components are integrated.The high speed JESD204B interface supports up to 12.288 Gbps lane rates, resulting in two lanes per transmitter and a single lane per receiver in the widest bandwidth mode. The interface also supports interleaved mode for lower bandwidths, thus reducing the total number of high speed data interface lanes to one. Both fixed and floating point data formats are supported. The floating point format allows internal AGC to be invisible to the demodulator device.The core of the ADRV9009 can be powered directly from 1.3 V regulators and 1.8 V regulators, and is controlled via a standard 4-wire serial port. Comprehensive power-down modes are included to minimize power consumption in normal use. The ADRV9009 is packaged in a 12 mm ? 12 mm, 196-ball chip scale ball grid array (CSP_BGA).Applications 3G, 4G, and 5G TDD macrocell base stations TDD active antenna systems Massive multiple input, multiple output (MIMO) Phased array radar Electronic warfare Military communications Portable test equipment

The ADRV9029 is a highly integrated, radio frequency (RF) agile transceiver offering four independently controlled transmitters, dedicated observation receiver inputs for monitoring each transmitter channel, four independently controlled receivers, integrated synthesizers, and digital signal processing functions providing a complete transceiver solution. The device provides the performance demanded by cellular infrastructure applications, such as small cell base station radios, macro 3G/4G/5G systems, and massive multiple in/multiple out (MIMO) base stations.The receiver subsystem consists of four independent, wide bandwidth, direct conversion receivers with wide dynamic range. The four independent transmitters use a direct conversion modulator resulting in low noise operation with low power consumption. The device also includes two wide bandwidth, time shared, observation path receivers with two inputs each for monitoring transmitter outputs.The complete transceiver subsystem includes automatic and manual attenuation control, dc offset correction, quadrature error correction (QEC), and digital filtering, eliminating the need for these functions in the digital baseband. Other auxiliary functions such as analog-to-digital converters (ADCs), digital-to-analog converters (DACs), and general-purpose input/ outputs (GPIOs) that provide an array of digital control options are also integrated.To achieve a high level of RF performance, the transceiver includes five fully integrated phase-locked loops (PLLs). Two PLLs provide low noise and low power fractional-N RF synthesis for the transmitter and receiver signal paths. A third fully integrated PLL supports an independent local oscillator (LO) mode for the observation receiver. The fourth PLL generates the clocks needed for the converters and digital circuits, and a fifth PLL provides the clock for the serial data interface.A multichip synchronization mechanism synchronizes the phase of all LOs and baseband clocks between multiple ADRV9029 chips. All voltage controlled oscillators (VCOs) and loop filter components are integrated and adjustable through the digital control interface.This device contains a fully integrated, low power digital predistortion (DPD) adaptation engine for use in power amplifier linearization. DPD enables use of high efficiency power amplifiers, reducing the power consumption of base station radios while also reducing the number of SERDES lanes necessary to interface with baseband processors.The low power crest factor reduction (CFR) engine of the ADRV9029 reduces the peak to average ratio (PAR) of the input signal, enabling higher efficiency transmit line ups while reducing the processing load on baseband processors.The serial data interface consists of four serializer lanes and four deserializer lanes. The interface supports both the JESD204B and JESD204C standards, operating at data rates up to 24.33 Gbps. The interface also supports interleaved mode for lower bandwidths, thus reducing the number of high speed data interface lanes to one. Both fixed and floating-point data formats are supported. The floating-point format allows internal automatic gain control (AGC) to be invisible to the demodulator device.The ADRV9029 is powered directly from 1.0 V, 1.3 V, and 1.8 V regulators and is controlled via a standard serial peripheral interface (SPI) serial port. Comprehensive power-down modes are included to minimize power consumption in normal use. The ADRV9029 is packaged in a 14 mm ? 14 mm, 289-ball chip scale ball grid array (CSP_BGA).APPLICATIONS3G/4G/5G TDD and FDD massive MIMO, macro and small cell base stations