The ADL6316 is a transmit variable gain amplifier (VGA) that?provides an interface from radio frequency digital-to-analog?converters (RF DACs), transceivers, and systems on a chip (SoC)?to power amplifiers. Integrated balun and hybrid couplers allow?high performance RF capability in the frequency range of?500 MHz to 1000 MHz.To optimize performance vs. power level, the ADL6316 includes?a voltage variable attenuator (VVA), high linearity amplifiers,?and a digital step attenuator (DSA). All of the devices integrated?into the ADL6316 are programmable via a 4-wire serial port?interface (SPI).The ADL6316 is manufactured on an advanced silicon germanium?(SiGe), bipolar complementary metal-oxide semiconductor?(BiCMOS) process.Applications 2G/3G/4G/long-term evolution (LTE) in FDD/TDD broadband?communication systems

The ADMV1010 is a compact, gallium arsenide (GaAs) design, monolithic microwave integrated circuit (MMIC), I/Q downconverter in a RoHS compliant package optimized for point to point microwave radio designs that operates in the 12.6 GHz to 15.4 GHz frequency range. The ADMV1010 is optimized to work as a low noise, upper sideband (low side local oscillator (LO)), image reject downconverter.The ADMV1010 provides 15 dB of conversion gain with 25 dB of image rejection. The ADMV1010 uses a radio frequency (RF), low noise amplifier (LNA) followed by an in-phase/quadrature (I/Q) double balanced mixer, where a driver amplifier drives the LO. IF1 and IF2 mixer outputs are provided, and an external 90? hybrid is needed to select the required sideband. The I/Q mixer topology reduces the need for filtering the unwanted sideband. The ADMV1010 is a much smaller alternative to hybrid style SSB downconverter assemblies, and it eliminates the need for wire bonding by allowing the use of surface-mount manufacturing assemblies.The ADMV1010 downconverter comes in a compact, thermally enhanced, 4.9 mm ? 4.9 mm, 32-terminal LCC package. The ADMV1010 operates over the ?40?C to +85?C temperature range.Applications Point to point microwave radios Radars and electronic warfare systems Instrumentation and automatic test equipment Satellite communications

The ADMV1011 is a compact, gallium arsenide (GaAs) design,monolithic microwave integrated circuit (MMIC), doublesideband (DSB) upconverter in a RoHS compliant packageoptimized for point to point microwave radio designs thatoperates in the 17 GHz to 24 GHz frequency range.The ADMV1011 provides 21 dB of conversion gain with 32 dBcof sideband rejection for the lower sideband and 23 dBc ofsideband rejection for the upper sideband. The ADMV1011uses a radio frequency (RF) amplifier preceded by an inphase/quadrature (I/Q) double balanced mixer, where a driveramplifier drives the local oscillator (LO) with a 2? multiplier.IF1 and IF2 mixer inputs are provided and an external 90?hybrid is needed to select the required sideband. The I/Q mixertopology reduces the need for filtering the unwanted sideband.The ADMV1011 is a much smaller alternative to hybrid styleDSB upconverter assemblies and it eliminates the need for wirebonding by allowing the use of surface-mount manufacturingassemblies.The ADMV1011 upconverter comes in a compact, thermallyenhanced, 4.9 mm ? 4.9 mm LCC package. The ADMV1011operates over the ?40?C to +85?C temperature range.Applications Point to point microwave radios Radars and electronic warfare systems Instrumentation, automatic test equipment

The ADMV1013 is a wideband, microwave upconverter optimized for point to point microwave radio designs operating in the 24 GHz to 44 GHz radio frequency (RF) range.The upconverter offers two modes of frequency translation. The device is capable of direct conversion to RF from baseband in-phase quadrature (I/Q) input signals, as well as single-sideband (SSB) upconversion from complex intermediate frequency (IF) inputs. The baseband I/Q input path can be disabled and modulated complex IF signals, anywhere from 0.8 GHz to 6.0 GHz, can be inserted in the IF path and upconverted to 24 GHz to 44 GHz while suppressing the unwanted sideband by typically better than 26 dBc. The serial port interface (SPI) allows adjustment of the quadrature phase and mixer gate voltage to allow optimum sideband suppression and local oscillator (LO) nulling. In addition, the SPI interface allows powering down the output envelope detector to reduce power consumption.The ADMV1013 upconverter comes in a 40-terminal land grid array package (LGA) package. The ADMV1013 operates over the ?40?C to +85?C case temperature range.Applications Point to point microwave radios Radar, electronic warfare systems Instrumentation, automatic test equipment (ATE)

The ADMV4420 is a highly integrated, double balanced, active mixer with an integrated fractional-N synthesizer, ideally suited for next generation K band satellite communications.The RF front end consists of an integrated RF balun and low noise amplifier (LNA) for an optimal, 7 dB, single-sideband noise figure while minimizing external components. Additionally, the high dynamic range IF output amplifier provides a nominal conversion gain of 36 dB.An integrated low phase noise, fractional-N, phase-locked loop (PLL) with a multicore voltage controlled oscillator (VCO) and internal 2? multiplier generate the necessary on-chip LO signal for the double balanced mixer, eliminating the need for external frequency synthesis. The multicore VCO uses an internal autocalibration routine that allows the PLL to select the necessary settings and lock in approximately 400 ?s.The reference input to the PLL employs a differentially excited 50 MHz crystal oscillator. Alternatively, the reference input can be driven by an external, singled-ended, 50 MHz source. The phase frequency detector (PFD) comparison frequency of the PLL operates up to 50 MHz.The ADMV4420 is fabricated on a silicon germanium (SiGe), bipolar complementary metal-oxide semiconductor (BiCMOS) process, and is available in a 32-lead, RoHS compliant, 5 mm ? 5 mm LFCSP package with an exposed pad. The device is specified over the ?40?C to +85?C temperature range on a 5 V power supply.Applications Satellite communication Point to point microwave communication

The ADMV7420 is a fully integrated system in package (SiP) inphase/quadrature (I/Q) downconverter that operates betweenan intermediate frequency (IF) output range of dc and 2 GHzand a radio frequency (RF) input range of 81 GHz and 86 GHz.The device provides a small signal conversion gain of 10 dBwith 30 dBc of image rejection. The ADMV7420 uses a lownoise amplifier followed by an image rejection mixer that isdriven by a 6? local oscillator (LO) multiplier. Differential I andQ mixer outputs are provided for direct conversion applications.Alternatively, the outputs can be combined using an external90? hybrid and two external 180? hybrids for single-endedapplications.The ADMV7420 comes in a fully integrated, surface-mount,34-terminal, 11 mm ? 13 mm, chip array small outline no leadcavity (LGA_CAV) package. The ADMV7420 operates over the?40?C to +85?C case temperature range. APPLICATIONS E-band communication systems High capacity wireless backhauls Test and measurement Aerospace and defense

The ADPA1106 is a gallium nitride (GaN), broadband power amplifier that delivers 46 dBm (40 W) with 56% typical power added efficiency (PAE) across a bandwidth of 2.7 GHz to 3.1 GHz. The ADPA1106 has a gain flatness of ?0.15 dB across the 2.7 GHz to 3.1 GHz frequency range.The ADPA1106 is ideal for pulsed applications such as marine, weather, and military radar.The ADPA1106 comes in a 32-lead, lead frame chip scale package, premolded cavity (LFCSP_CAV) and is specified for operation from ?40?C to +85?C.APPLICATIONSWeather radarMarine radarMilitary radar

The ADPA7007CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 18 GHz to 44 GHz. The amplifier provides a gain of 21.5 dB, an output power for 1 dB compression (P1dB) of 31 dBm, and a typical output thirdorder intercept (IP3) of 41 dBm. The ADPA7007CHIP requires 1400 mA from a 5 V supply on the supply voltage (VDD) and features inputs and outputs that are internally matched to 50 ?, facilitating integration into multichip modules (MCMs). All data was taken with the chip connected via two 0.025 mm wire bonds that are at least 0.31 mm long.Applications Military and space Test instrumentation

The ADRF5020 is a general-purpose, single-pole, double-throw(SPDT) switch manufactured using a silicon process. It comesin a 3 mm ? 3 mm, 20-lead land grid array (LGA) package andprovides high isolation and low insertion loss from 100 MHz to30 GHz.This broadband switch requires dual supply voltages, +3.3 Vand ?2.5 V, and provides CMOS/LVTTL logic-compatiblecontrol.Applications Test instrumentation Microwave radios and very small aperture terminals (VSATs) Military radios, radars, electronic counter measures (ECMs) Broadband telecommunications systems

The ADRF5026 is a nonreflective, single-pole, double-throw (SPDT) radio frequency (RF) switch manufactured in a silicon process.The ADRF5026 operates from 100 MHz to 44 GHz with better than 3.8 dB of insertion loss and 45 dB of isolation. The ADRF5026 features an all off control, where both RF ports are in an isolation state. The ADRF5026 has a nonreflective design and both of the RF ports are internally terminated to 50 ?. The ADRF5026 requires a dual-supply voltage of +3.3 V and ?3.3 V. The device employs complimentary metal-oxide semiconductor/low-voltage transistor-transistor logic (CMOS/LVTTL) logic-compatible controls.The ADRF5026 is pin-compatible with the ADRF5027 low frequency cutoff version, which operates from 9 kHz to 44 GHz. The ADRF5026 RF ports are designed to match a characteristic impedance of 50 ?. For ultrawideband products, impedance matching on the RF transmission lines can further optimize high frequency insertion loss and return loss characteristics. Refer to the Narrow-Band Impedance Matching section for an example of a matched circuit that achieves a flat insertion loss response of 2.4 dB from 28 GHz to 43 GHz.The ADRF5026 comes in a 20-terminal, 3 mm ? 3 mm, RoHS-compliant, land grid array (LGA) package and can operate from ?40?C to +105?C.The ADRF5026 supports defense and aerospace applications (AQEC).Applications Industrial scanners Test and instrumentation Cellular infrastructure: 5G mmWave Military radios, radars, electronic counter measures (ECMs) Microwave radios and very small aperture terminals (VSATs)