The HMC8205BF10 is a gallium nitride (GaN) broadband power amplifier delivering 45.5 dBm (35 W) with 38% power added efficiency (PAE) across an instantaneous bandwidth of 0.3 GHz to 6 GHz. No external matching is required to achieve full band operation. Additionally, no external inductor is required to bias the amplifier. Also, dc blocking capacitors for the RFIN and RFOUT pins are integrated into the HMC8205BF10.The HMC8205BF10 is ideal for pulsed or continuous wave(CW) applications, such as military jammers, wirelessinfrastructure, radar, and general-purpose amplification.The HMC8205BF10 amplifier is a 10-lead ceramic leaded chip carrier (LDCC).The HMC8205BCHIPS is a gallium nitride (GaN), broadbandpower amplifier that delivers 45.5 dBm (35 W) with 40% poweradded efficiency (PAE) across an instantaneous bandwidth of0.4 GHz to 6 GHz. No external matching is required to achievefull band operation. No external inductor is required to bias theamplifier. In addition, dc blocking capacitors for the RFIN andRFOUT pins are integrated into the HMC8205BCHIPS.The HMC8205BCHIPS is ideal for pulsed or continuous wave(CW) applications, such as military jammers, wirelessinfrastructure, radar, and general-purpose amplification.APPLICATIONS Military jammers Commercial and military radar Power amplifier stage for wireless infrastructure? Test and measurement equipment

The HMC8415LP6GE is a gallium nitride (GaN), power amplifier, delivering 40 W (46 dBm) with more than 37.5% power added efficiency (PAE) across a bandwidth of 9 GHz to 10.5 GHz.The HMC8415LP6GE is ideal for pulsed applications, such as wireless weather, marine, and military radar applications.APPLICATIONS Weather radars Marine radars Military radars

The HMC8500PM5E is a gallium nitride (GaN), broadbandpower amplifier delivering 10 W (40 dBm), typical, with up to 55% power added efficiency (PAE) across an instantaneousbandwidth of 0.01 GHz to 2.8 GHz, at an input power of 30 dBm. The typical gain flatness is 3 dB at small signal levels.The HMC8500PM5E is ideal for pulsed or continuous wave(CW) applications, such as wireless infrastructure, radars,public mobile radios, and general-purpose amplification.The HMC8500PM5E amplifier is externally tuned using lowcost, surface-mount components and is available in a compactLFCSP package.Note that, throughout this data sheet, multifunction pins, such as RFIN/VGG, are referred to either by the entire pin name or by a single function of the pin, for example, RFIN, when only that function is relevantAPPLICATIONS Extended battery operation for public mobile radios Power amplifier stage for wireless infrastructures Test and measurement equipment Commercial and military radars General-purpose transmitter amplification

The HMC951A is a compact gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), in-phase quadrature (I/Q) downconverter in a RoHS compliant package that operates from 5.6 GHz to 8.6 GHz. This device provides a small signal conversion gain of 13 dB with a noise figure of 2 dB and an image rejection of 32 dBc. The HMC951A uses a low noise amplifier (LNA) followed by an image mixer that is driven by a local oscillator (LO) buffer amplifier. The image reject mixer eliminates the need for a filter following the LNA and removes thermal noise at the image frequency. The IF1 and IF2 mixer outputs are provided and an external 90? hybrid is needed to select the required sideband. The I/Q mixer topology reduces the need for filtering of unwanted sideband. The HMC951A is a smaller alternative to hybrid style, single sideband (SSB) downconverter assemblies, and it eliminates the need for wire bonding by allowing the use of surface-mount manufacturing techniques.The HMC951A is available in 4 mm ? 4 mm, 24-lead lead frame chip scale package (LFCSP) and operates over the ?40?C to +85?C temperature range. An evaluation board for the HMC951A is also available upon request. Applications Point to point and point to multipoint radios Military radars, electronic warfare, and electronic intelligence Satellite communications Sensors

The HMC1119 is a broadband, highly accurate, 7-bit digitalattenuator, operating from 0.1 GHz to 6.0 GHz with 31.5 dBattenuation control range in 0.25 dB steps.The HMC1119 is implemented in a silicon process, offeringvery fast settling time, low power consumption, and high ESDrobustness. The device features safe state transitions and isoptimized for excellent step accuracy and high linearity overfrequency and temperature range. The RF input and output areinternally matched to 50 ? and do not require any externalmatching components. The design is bidirectional; therefore,the RF input and output are interchangeable.The HMC1119 has an on-chip regulator that can support a widesupply operating range from 3.3 V to 5.0 V with no performancechange in electrical characteristics. The HMC1119 incorporates adriver that supports serial (3-wire) and parallel controls of theattenuator.The HMC1119 comes in a RoHS-compliant, compact, 4 mm ?4 mm LFCSP package.A fully populated evaluation board is available.Applications Cellular infrastructure Microwave radios and very small aperture terminals (VSATs) Test equipment and sensors IF and RF designs

RF BOOSTERPACK CC110L

The CC1352P device is a true multi band wireless MCU supporting long range applications with the industry’s lowest power integrated +20 dBm power amplifier (PA). The CC1352P enables concurrent operation at both 2.4  GHz and Sub-1 GHz frequencies with PA support determined by external RF matching components.

To kick start your development, we offer two LAUNCHXL-CC1352P LaunchPads with optimized external RF components, one for Sub-1GHz PA and another for 2.4GHz PA wireless operations:

LAUNCHXL-CC1352P1:

• Sub-1 GHz operation at 868 MHz / 915 MHz up to 20 dBm
• 2.4 GHz operation up to 5 dBm

LAUNCHXL-CC1352P-2:

• Sub-1 GHz operation at 868 MHz / 915 MHz up to +14 dBm
• 2.4 GHz operation up to +18 dBm (For Europe, 2.4 GHz operation is certified up to +10 dBm)

The CC1352P device is part of the SimpleLink™ microcontroller (MCU) platform which consists of Wi-Fi®, Bluetooth® low energy, Sub-1 GHz and host MCUs, which all share a common, easy-to-use development environment with a single core software development kit (SDK) and rich tool set.

Features:

• LaunchPad with multiband radio supporting concurrent 2.4 GHz and sub-1 GHz operation
• Broad band antenna support for Sub-1 GHz (868 MHz / 915 MHz) and 2.4 GHz frequency bands
• On-board emulator gets you started with instant code development
• All IOs accessible on pin headers compatible with the LaunchPad/BoosterPack eco system

What's included:

• LaunchPad Board
• Micro USB Cable
• Quick Start Guide

AFE7444 quad-channel RF-sampling AFE with 14-bit 9-GSPS DAC and 3-GSPS ADC evaluation module

The ADG901/ADG902 are wideband switches that use a complementary metal-oxide semiconductor (CMOS) process to provide high isolation and low insertion loss to 1 GHz. The ADG901 is an absorptive (matched) switch with 50 ? terminated shunt legs, while the ADG902 is a reflective switch. These devices are designed such that the isolation is high over the dc to 1 GHz frequency range. These switches enable the user to pass dc signals up to 0.5 V without the use of a dc blocking capacitor. They have on-board CMOS control logic, thus eliminating the need for external controlling circuitry. The control inputs are both CMOS and LVTTL compatible. The low power consumption of these CMOS devices makes them ideally suited to wireless applications and general-purpose high frequency switching.Product Highlights 40 dB Off Isolation at 1 GHz 0.8 dB Insertion Loss at 1 GHz 17 dBm P1dB at 1 GHzApplications Wireless communications General purpose RF switching Dual-band applications High speed filter selection Digital transceiver front-end switch IF switching Tuner modules Antenna diversity switching list

CC2541 Mini Development Kit