The HMC8205BF10 is a gallium nitride (GaN) broadband power amplifier delivering 45.5 dBm (35 W) with 38% power added efficiency (PAE) across an instantaneous bandwidth of 0.3 GHz to 6 GHz. No external matching is required to achieve full band operation. Additionally, no external inductor is required to bias the amplifier. Also, dc blocking capacitors for the RFIN and RFOUT pins are integrated into the HMC8205BF10.The HMC8205BF10 is ideal for pulsed or continuous wave(CW) applications, such as military jammers, wirelessinfrastructure, radar, and general-purpose amplification.The HMC8205BF10 amplifier is a 10-lead ceramic leaded chip carrier (LDCC).The HMC8205BCHIPS is a gallium nitride (GaN), broadbandpower amplifier that delivers 45.5 dBm (35 W) with 40% poweradded efficiency (PAE) across an instantaneous bandwidth of0.4 GHz to 6 GHz. No external matching is required to achievefull band operation. No external inductor is required to bias theamplifier. In addition, dc blocking capacitors for the RFIN andRFOUT pins are integrated into the HMC8205BCHIPS.The HMC8205BCHIPS is ideal for pulsed or continuous wave(CW) applications, such as military jammers, wirelessinfrastructure, radar, and general-purpose amplification.APPLICATIONS Military jammers Commercial and military radar Power amplifier stage for wireless infrastructure  Test and measurement equipment

The HMC936ALP6E is a 6-bit digital phase shifterwhich is rated from 1.2 to 1.4 GHz, providing 360degrees of phase coverage, with a LSB of 5.625degrees. The HMC936ALP6E features very low RMSphase error of 1.2 degrees and extremely low inser-tionloss variation of ±0.5 dB across all phase states. Thishigh accuracy phase shifter is controlled with positivecontrol logic of 0/+5V and requires no negative supplyvoltage. The HMC936ALP6E is housed in a compact6x6 mm plastic leadless SMT package and is internallymatched to 50 Ohms with no external components.Applications EW receivers  Weather and military radar Satellite communications Beamforming modules Phase cancellation

The ADRF6518 is a matched pair of fully differential low noise and low distortion programmable filters and variable gain amplifiers (VGAs). Each channel is capable of rejecting large out-of-band interferers while reliably boosting the wanted signal, thus reducing the bandwidth and resolution requirements on the analog-to-digital converters (ADCs). The excellent matching between channels and their high spurious-free dynamic range over all gain and bandwidth settings make the ADRF6518 ideal for quadrature-based (IQ) communication systems with dense constellations, multiple carriers, and nearby interferers. The various amplifier gains, filter corners and other features are all programmable via a serial port interface (SPI) port.The first VGA that precedes the filters offers 24 dB of continuous gain control with fixed gain options of 9 dB, 12 dB, and 15 dB, and sets a differential input impedance of 400 Ω. The filters provide a six-pole Butterworth response with 0.5 dB corner frequencies from 1 MHz to 63 MHz in 1 MHz steps. For operation beyond 63 MHz, the filter can be disabled and completely bypassed, thereby extending the −3 dB BW up to 1100 MHz. A wideband peak detector is available to monitor the peak signal at the filter inputs. The pair of VGAs that follow the filters each provides 24 dB of continuous gain control with fixed gain options of 12 dB, 15 dB, 18 dB, and 21 dB. The output buffers offer an additional option of 3 dB or 9 dB gain and provide a differential output impedance of less than 10 Ω. They are capable of driving 1.5 V p-p into 400 Ω loads at better than 65 dBc HD3. The output common-mode voltage defaults to VPS/2 and can be adjusted down to 900 mV via the VOCM pin. Independent, built-in dc offset correction loops for each channel can be disabled via the SPI if fully dc-coupled operation is desired. The high-pass corner frequency is determined by external capacitors on the OFS1 and OFS2 pins and the postfilter VGA gain.The ADRF6518 operates from a 3.15 V to 3.45 V supply and consumes a maximum supply current of 400 mA. When fully disabled, it consumes <1 mA. The ADRF6518 is fabricated in an advanced silicon-germanium BiCMOS process and is available in a 32-lead, exposed pad LFCSP. Performance is specified over the −40°C to +85°C temperature range.Applications Point-to-point and point-to-multipoint radios Baseband I/Q receivers Diversity receivers ADC drivers Instrumentation Medical

RF Mixer 27-31.5 GHz Triple Balanced mix

RF Amplifier lo Noise amp SMT, 24 - 28 GHz

RF Mixer DBL-BAL mix SMT 4.5 - 9.0 GHz

FREQUENCY SYNTHESIZER, 7GHZ, QFN-EP;

RF Amplifier

InGaP HBT Power Amplifier SMT, 4.9 - 5.9 GHz Features: Gain: 20 dB 34% PAE @ Psat = +26 dBm 3.7% EVM @ Pout = +15 dBm with 54 Mbps OFDM Signal Supply Voltage: +3 V Power Down Capability Low External Part Count

5.9 GHz to 23.6 GHz, Wideband, Microwave Upconverter Features: Wideband RF output frequency range: 5.9 GHz to 23.6 GHz Two upconversion modes Direct conversion from baseband I/Q to RF Single sideband upconversion from real IF LO input frequency range: 5.4 GHz to 14 GHz LO doubler for up to 28 GHz Matched 100 Ω balanced RF output, LO input, and IF input High impedance baseband inputs Sideband suppression and carrier feedthrough optimization Variable attenuator and power detector for Tx power control Programmable via 4-wire SPI interface 32-lead, 5 mm × 5 mm LFCSP microwave packaging