RF Amplifier x2 Active mult SMT, 9 - 16 GHz Fout

The HMC273AMS10G(E) is a general purposebroadband 5-Bit positive control GaAs IC digitalattenuator in a 10 lead MSOP plastic package.Covering 0.7 to 3.8 GHz, the insertion loss is typicallyless than 3 dB. The attenuator bit values are1 (LSB), 2, 4, 8, and 16 dB for a total attenuationof 31 dB. Accuracy is excellent at ±0.2 dB typicalwith an IIP3 of up to +46 dBm. Five bit control voltageinputs, toggled between 0 and +3 to +5 volts, areused to select each attenuation state. A single Vddbias of +3 to +5 volts applied through an external5K Ohm resistor is required.Applications Cellular; UMTS/3G infrastructure ISM, MMDS, WLAN, WiMAX Microwave radio & VSAT Test equipment and sensors

The HMC1049 is a GaAs MMIC low noise amplifier (LNA) that operates between 0.3 GHz and 20 GHz. This LNA provides 16 dB of small signal gain, a 1.7 dB noise figure, and an Output IP3 of 27 dBm, requiring only 70 mA from a 7 V supply. The P1dB output power of 16 dBm enables the LNA to function as a local oscillator (LO) driver for balanced, I/Q or image rejection mixers. VDD can be applied to Pad 2 with VDD = 7 V or to Pad 4 with VDD = 4 V. Pad 4 requires a bias tee. The HMC1049 is also internally matched to 50 Ω for ease of integration into multichip modules (MCMs). All data is taken with the chip in a 50 Ω test fixture connected via 0.025 mm (1 mil) diameter wire bonds of 0.31 mm (12 mil) length.Applications Point-to-point radios Point-to-multipoint radios Military and space Test instrumentation

The HMC1097LP4E is a low noise, high linearity Direct Quadrature Modulator RFIC which is ideal for digital modulation applications from 0.1 to 6.0 GHz including; Cellular/3G, WiMAX/4G, Broadband Wireless Access & ISM circuits. Housed in a compact 4x4 mm (LP4) SMT QFN package, the RFIC requires minimal external components & provides a low cost alternative to more complicated double upconversion architectures. The RF output port is single-ended and matched to 50 Ohms with no external components. The LO requires -6 to +6 dBm and can be driven in either differential or single-ended mode. This device is optimized for a +5V supply, and offers improved carrier feedthrough and sideband suppression characteristics.APPLICATIONS UMTS, GSM or CDMA Basestations Fixed Wireless or WLL ISM Transceivers, 900 & 2400 MHz GMSK, QPSK, QAM, SSB Modulators Cellular/3G and WiMAX/4G

The HMC316MS8(E) is a miniature double balanced mixer in 8 lead plastic surface mount package. The passive GaAs schottky diode mixer implements planar on chip balun transformers, and requires no external components. The mixer can be used as an upconverter, downconverter, or modulator. At mid-band the mixer provides 7.5 dB conversion loss and +25 dBm IIP3 with LO drive levels of +19 dBm. The design was optimized for low cost high volume applications where high converter linearity is required.Applications Cellular Basestations Cable Modems Fixed Wireless Access Systems WiMAX

The HMC400MS8(E) is a high dynamic range passive MMIC mixer in plastic surface mount 8 lead Mini Small Outline Package (MSOP) covering 1.7 to 2.2 GHz. Excellent input IP3 performance of +36 dBm for down conversion and +29 dBm for up conversion is provided for 2.5G & 3G GSM/CDMA based UMTS or PCS applications at an LO drive of +17dBm. With a 1dB compression of +21 dBm, the RF port will accept a wide range of input signal levels. Conversion loss is 8.5dB typical and LO isolations are maintained at 22 to 33 dB.This miniature single-ended monolithic GaAs FET mixer does not require any external components or bias. The 50 to 300 MHz IF frequency response will satisfy many UMTS/PCS transmit or receive frequency plans configured for low side LO. The HMC400MS8(E) input IP3 performance coupled with its high P1dB rivals traditional active FET mixers while offering a much smaller 14.8mm² standard IC footprint and no DC bias.Applications GSM, GPRS & EDGE CDMA & W-CDMA Cable Modem Termination Systems

The HMC407MS8G & HMC407MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 5 and 7 GHz. The amplifier requires no external matching to achieve operation and is thus truly 50 Ohm matched at input and output. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifier provides 15 dB of gain, +29 dBm of saturated power at 28% PAE from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use.Applications UNII HiperLAN

The HMC465LP5(E) is a GaAs MMIC PHEMT DistributedDriver Amplifier packaged in leadless 5x5mm surface mount package which operate betweenDC and 20 GHz. The amplifier provides 15 dB of gain,3 dB noise figure and +25 dBm of saturated outputpower while requiring only 160 mA from a +8V supply.Gain flatness is excellent at ±0.5 dB as well as ±4deg deviation from linear phase from DC - 10 GHzmaking the HMC465LP5(E) ideal for OC192 fiberoptic LN/MZ modulator driver amplifiers as well astest equipment applications. The HMC465LP5(E)amplifiers I/Os are internally matched to 50 Ohms.Applications OC192 LN/MZ modulator driver Microwave radio andVSAT Test instrumentation Military EW, ECM & C³I

The HMC465LP5(E) is a GaAs MMIC PHEMT DistributedDriver Amplifier packaged in leadless 5x5mm surface mount package which operate betweenDC and 20 GHz. The amplifier provides 15 dB of gain,3 dB noise figure and +25 dBm of saturated outputpower while requiring only 160 mA from a +8V supply.Gain flatness is excellent at ±0.5 dB as well as ±4deg deviation from linear phase from DC - 10 GHzmaking the HMC465LP5(E) ideal for OC192 fiberoptic LN/MZ modulator driver amplifiers as well astest equipment applications. The HMC465LP5(E)amplifiers I/Os are internally matched to 50 Ohms.Applications OC192 LN/MZ modulator driver Microwave radio andVSAT Test instrumentation Military EW, ECM & C³I

The HMC471MS8G(E) is a SiGe HBT Dual Channel Gain Block MMIC SMT amplifier covering DC to 5 GHz. These versatile products contain two gain blocks, packaged in a single 8 lead plastic MSOP, for use as either separate cascadable 50 Ohm RF/IF gain stages, LO or PA drivers or with both amplifiers combined utilizing external 90° hybrids to create a high linearity driver amplifier.Each amplifier in the HMC471MS8G(E) offers 20 dB of gain, +20 dBm P1dB with a +34 dBm output IP3 at 850 MHz while requiring only 80 mA from a single positive supply. The combined dual amplifier circuit delivers up to +21 dBm P1dB with +36 dBm OIP3 for specific application bands through 4 GHz.Applications Cellular / PCS / 3G  Fixed Wireless & WLAN  CATV, Cable Modem & DBS  Microwave Radio & Test Equipment