The HMC474 devices are general-purpose SiGe, Heterojunction Bipolar transistor (HBT), gain block MMIC, SMT amplifiers covering dc to 6 GHz. These amplifiers can be used as cascadable 50 Ω RF/IF gain stages with up to 10 dBm output power. The HMC474 devices offer 15 dB or 15.5 dB of gain with 20 dBm or 22 dBm output IP3 at 850 MHz while requiring only 25 mA from a single positive supply. The Darlington topology results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.Applications Cellular/PCS/3G WiBro/WiMAX/4G Fixed wireless and WLAN CATV, cable modem, and direct broadcast (DBS) Microwave radio and test equipment 

The HMC476SC70(E) is a SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifiers covering DC to 6 GHz. This industry standard SC70 packaged amplifier can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +12 dBm output power. The HMC476SC70(E) offers 20 dB of gain with a +24 dBm output IP3 at 850 MHz while requiring only 35 mA from a singlepositive supply. The Darlington topology results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.Applications Cellular/PCS/3G WiBro/WiMAX/4G Fixed Wireless and WLAN CATV, Cable Modem, and Direct Broadcast Satellite (DBS) Microwave Radio and Test Equipment

RF Modules x2 Active mult Module, 24 - 33 GHz Fout

RF Wireless Misc x2 Active mult Chip, 24 - 33 GHz Fout

RF Amplifier VGA LNA 2.3 - 2.5 GHz

RF Amplifier InGaP HBT Gain Block Chip, DC - 10 GHz

RF Amplifier Medium pow amp Chip, 21 - 32 GHz

RF Mixer 2-18GHz Double Balanced mix

The HMC481ST89 & HMC481ST89E are SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifiers covering DC to 5 GHz. Packaged in an industry standard SOT89, the amplifier can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +21 dBm output power. The HMC481ST89(E) offer 20 dB of gain with a +33 dBm output IP3 at 1 GHz while requiring only 79 mA from a single positive supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.Applications Cellular/PCS/3G Fixed Wireless and WLAN CATV, Cable Modem, and Direct Broadcast Satellite (DBS) Microwave Radio & Test Equipment

The HMC482ST89(E) is a SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifier covering DC to 5 GHz. Packaged in an industry standard SOT89, the amplifier can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +24 dBm output power. The Darlington feedback pair results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.Applications Cellular / PCS / 3G  Fixed Wireless, WLAN & WiMAX  CATV, Cable Modem & DBS  Microwave Radio & Test Equipment