Microwave Wideband Synthesizer with Integrated VCO Features: Output frequency range: 800 MHz to 12.8 GHz Jitter = 18 fsRMS (Integration BW: 100 Hz to 100 MHz) Jitter = 27 fsRMS (ADC SNR Method) Wideband Noise Floor: -160 dBc/Hz @12 GHz PLL Specifications: -239 dBc/Hz: Normalized In-Band Phase Noise Floor -147 dBc/Hz: Normalized In-Band 1/f Noise Phase Detector Frequency up to 500 MHzReference Input Frequency up to 1 GHz Typical -100 dBc PFD spursReference to Output Delay Specifications: Part-to-Part Standard Deviation: 3 ps Temperature Drift: 0.03 ps/ Adjustment Step Size: <+/-0.1 ps Multi-chip Output Phase Alignment 3.3 V and 5 V Power supplies 7 mm x 7 mm 48 Lead LGA

Low Capacitance, Low Charge Injection, 15 V/+12 V iCMOS Quad SPST Switch Features: 1 pF off capacitance 2.6 pF on capacitance <1 pC charge injection 33 V supply range 120 Ω on resistance Fully specified at ±15 V, +12 V No VL supply required 3 V logic-compatible inputs Rail-to-rail operation 16-lead TSSOP and 16-lead LFCSP Typical power consumption: <0.03 μW

High Voltage, Latch-Up Proof, 8-Channel Differential Multiplexer Features: Latch-up proof 3.5 pF off source capacitance 33 pF off drain capacitance 0.35 pC typical charge injection ±0.02 nA on channel leakage Low on resistance: 155 typical ±9 V to ±22 V dual-supply operation 9 V to 40 V single-supply operation VSS to VDD analog signal range Human body model (HBM) ESD rating - 8 kV I/O port to supplies

Fault Protection, 6 RON, SPST Switch with 0.6 k Feedback Channel Features: Analog output protection and detection solution Overvoltage protection up to 60 V on S and SFB pins Power off protection up to 60 V on S and SFB pins Integrated 0.6 k secondary feedback channel Known output under all conditions User enabled, power-on condition pulls source to 0 V Known state without digital inputs present Latch-up immune Optimized resistance for measurement channel and feedback channel Low on resistance of 6 typical on signal channel Ultraflat, on resistance on signal channel 3 mm 2 mm LFCS VSS to VDD 2 V signal range Fully specified at ±15 V, ±20 V, +12 V, and +36 V ±5 V to ±22 V dual supply operation 8 V to 44 V single-supply operation

Low Voltage, 300 MHz Quad 2:1 Mux Analog HDTV Audio/Video Switch Features: Bandwidth: 300 MHz Low Insertion Loss and on Resistance: 5 typical On Resistance Flatness: 0.68 Typical Single 3 V/5 V Supply Operation Low Quiescent Supply Current: 1 nA Typical TTL/CMOS Compatible Fast switching times: tON, 7 ns; tOFF, 5 ns ESD protection 2 kV human body model (HBM) 200 V machine model (MM) 1 kV field-induced charged device model (FICDM)

Wideband, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT Switches Features: Wideband switch: −3 dB at 4 GHz Absorptive/reflective switches High off isolation (43 dB at 1 GHz) Low insertion loss (0.8 dB at 1 GHz) Single 1.65 V to 2.75 V power supply CMOS/LVTTL control logic 8-lead MSOP and tiny 3 mm × 3 mm LFCSP Low power consumption (<1 µA)

0 Hz/DC to 34 GHz, SPDT MEMS Switches Features: ADGM1001: DC to 34 GHz Insertion loss 0.8 dB (typical) at 18 GHz 1.5 dB (typical) at 34 GHz IIP3: 76 dBm (typical) Maximum RF power: 33 dBm On resistance: 3.4 Ω (typical) Maximum dc current: 200 mA Actuation lifetime: 100 million cycles (minimum) On switching time (tON): 200 μs (typical) Integrated 3.3 V driver for simple control with parallel and SPI Independently controllable switches Space-saving integrated passive components Small, 5.00 mm × 4.00 mm × 0.90 mm, 24-lead LGA package Temperature range: –40°C to +85°C

0 Hz/DC to 16 GHz, SPDT MEMS Switches Features: ADGM1003: DC to 16 GHz Insertion loss 0.5 dB (typical) at 6 GHz 0.7 dB (typical) at 16 GHz Maximum RF power: 27 dBm On resistance: 3.4 Ω (typical) Maximum dc current: 75 mA Actuation lifetime: 100 million cycles (Typical) On switching time (tON): 200 μs (typical) Integrated 3.3 V driver for simple control with parallel and SPI Independently controllable switches Space-saving integrated passive components Small, 5.00 mm × 4.00 mm × 0.90 mm, 24-lead LGA package Temperature range: –40°C to +85°C

0 Hz/DC to 16 GHz, SPDT MEMS Switches Features: ADGM1003: DC to 16 GHz Insertion loss 0.5 dB (typical) at 6 GHz 0.7 dB (typical) at 16 GHz Maximum RF power: 27 dBm On resistance: 3.4 Ω (typical) Maximum dc current: 75 mA Actuation lifetime: 100 million cycles (Typical) On switching time (tON): 200 μs (typical) Integrated 3.3 V driver for simple control with parallel and SPI Independently controllable switches Space-saving integrated passive components Small, 5.00 mm × 4.00 mm × 0.90 mm, 24-lead LGA package Temperature range: –40°C to +85°C

Robust, Industrial, Low Latency and Low Power 10 Mbps, 100 Mbps, and 1 Gbps Ethernet PHY Features: 10BASE-Te/100BASE-TX/1000BASE-T IEEE® 802.3™ compliant MII, RMII, and RGMII MAC interfaces 1000BASE-T RGMII latency transmit < 68 ns, receive < 226 ns 100BASE-TX MII latency transmit< 52 ns, receive < 248 ns EMC test standards IEC 61000-4-5 surge (±4 kV) IEC 61000-4-4 electrical fast transient (EFT) (±4 kV) IEC 61000-4-2 ESD (±6 kV contact discharge) IEC 61000-4-6 conducted immunity (10 V) EN55032 radiated emissions (Class A) EN55032 conducted emissions (Class A) Unmanaged configuration using multilevel pin strapping EEE in accordance with IEEE 802.3az Start of packet detection for IEEE 1588 time stamp support Enhanced link detection Configurable LED Crystal oscillator frequency/25 MHz clock input frequency (50 MHz for RMII) 25 MHz/125 MHz synchronous clock output Small package and wide temperature range 40-lead, 6 mm × 6 mm LFCSP Specified for −40°C to +105°C ambient operation Low power consumption 330 mW for 1000BASE-T 140 mW for 100BASE-TX 3.3 V/2.5 V/1.8 V MAC interface VDDIO supply Integrated power supply monitoring and POR