Low Cost, Low Power, True RMS-to-DC Converter Features: Converts an ac voltage waveform to a dc voltage and then converts to the true rms, average rectified, or absolute value 200 mV rms full-scale input range (larger inputs with input attenuator) High input impedance: 1012 Ω  Low input bias current: 25 pA maximum High accuracy: ±0.3 mV ± 0.3% of reading RMS conversion with signal crest factors up to 5 Wide power supply range: +2.8 V, −3.2 V to ±16.5 V Low power: 200 μA maximum supply current Buffered voltage output No external trims needed for specified accuracy Related device: the AD737 features a power-down control with standby current of only 25 μA; the dc output voltage is negative and the output impedance is 8 kΩ

Dual 12-Bit nanoDAC+ with 2 ppm/C Reference, I2C Interface Features: Low drift 2.5 V reference: 2 ppm/°C typical Tiny package: 3 mm × 3 mm, 16-lead LFCSP Total unadjusted error (TUE): ±0.1% of full-scale range (FSR) maximum Offset error: ±1.5 mV maximum Gain error: ±0.1% of FSR maximum High drive capability: 20 mA, 0.5 V from supply rails User selectable gain of 1 or 2 (GAIN pin) Reset to zero scale or midscale (RSTSEL pin) 1.8 V logic compatibility Low glitch: 0.5 nV-sec 400 kHz I2C-compatible serial interface Low power: 3.3 mW at 3 V 2.7 V to 5.5 V power supply −40°C to +105°C temperature range

4-Channel, I2C, Ultralow Power 12-Bit ADC in 20-Lead LFCSP/TSSOP Features: I2C-compatible serial interface supports standard and fast modes Ultralow power: 90 μW typical at 3 V in fast mode Specified for VDD of 2.7 V to 5.25 V On-chip accurate 2.5 V reference, 5 ppm/°C typical drift 4 single-ended analog input channels ALERT function BUSY function Autocycle mode Wide input bandwidth 68 dB signal-to-noise ratio (SNR) typical at input frequency of 1 kHz Flexible power/throughput rate management No pipeline delays Power-down mode 550 nA typical at VDD = 5.25 V 435 nA typical at VDD = 3 V 20-lead LFCSP and TSSOP packages Temperature range: −40°C to +125°C

20 V, 6 A, Synchronous, Step-Down DC-to-DC Regulator Features: Input voltage range: 4.5 V to 20 V Integrated MOSFET: 44 mΩ typical/11 mΩ typical Reference voltage: 0.6 V ± 1% Continuous output current: 6 A Programmable current-limit thresholdProgrammable switching frequency: 200 kHz to 1400 kHz Precision enable and power good External compensation Internal soft start with external adjustable option Startup into a precharged output Supported by ADIsimPower design tool

18 V, 12 A Step-Down Regulator with Programmable Current Limit Features: Input voltage: 4.5 V to 18 V Continuous output current: 12 A Integrated MOSFETs: 17 mΩ high-side/4.5 mΩ low-side 0.6 V ± 0.5% reference voltage Programmable switching frequency range: 200 kHz to 2200 kHz Enhanced transient response Programmable current limit with ±10% accuracy Precision enable and power good External compensation and soft start Start up into a precharged output Supported by the ADIsimPower design tool

18 GHz to 44 GHz, GaAs, pHEMT, MMIC, 1/2 W Power Amplifier Features: Output P1dB: 29 dBm PSAT: 29.5 dBm Gain: 23.5 dB Output IP3: 38 dBm Supply voltage: 5 V at 800 mA Integrated power detector 50 Ω matched input/output Die size: 2.750 mm × 1.805 mm × 0.102 mm

18 GHz to 44 GHz, GaAs, pHEMT, MMIC, 1/2 W Power Amplifier Features: Output P1dB: 29 dBm PSAT: 29.5 dBm Gain: 23.5 dB Output IP3: 38 dBm Supply voltage: 5 V at 800 mA Integrated power detector 50 Ω matched input/output Die size: 2.750 mm × 1.805 mm × 0.102 mm

Ultra-Low-Noise, High-Accuracy 4.096V Voltage Reference Features: Maximum temperature coefficient (TCVOUT): 0.8 ppm/°C (D grade 0°C to 70°C) 1 ppm/°C (C grade 0°C to 70°C) 2 ppm/°C (B grade −40°C to +125°C) 4 ppm/°C (A grade 40°C to +125°C) Output noise (0.1 Hz to 10 Hz): 1 μV p-p at VOUT of 2.048 V typical Initial output voltage error: B, C, D grade: ±0.02% (maximum) Input voltage range: 3 V to 15 V Operating temperature: A grade and B grade: −40°C to +125°C C grade: 0°C to +70°C Output current: +10 mA source/−10 mA sink Low quiescent current: 950 μA (maximum) Low dropout voltage: 300 mV at 2 mA (VOUT ≥ 3 V) 8-lead SOIC package and LCC package AEC-Q100 qualified for automotive applications Long-term drift: 8 ppm typical at 4500 hours

Ultra-Low-Noise, High-Accuracy 5.0V Voltage Reference Features: Maximum temperature coefficient (TCVOUT): 0.8 ppm/°C (D grade 0°C to 70°C) 1 ppm/°C (C grade 0°C to 70°C) 2 ppm/°C (B grade −40°C to +125°C) 4 ppm/°C (A grade 40°C to +125°C) Output noise (0.1 Hz to 10 Hz): 1 μV p-p at VOUT of 2.048 V typical Initial output voltage error: B, C, D grade: ±0.02% (maximum) Input voltage range: 3 V to 15 V Operating temperature: A grade and B grade: −40°C to +125°C C grade: 0°C to +70°C Output current: +10 mA source/−10 mA sink Low quiescent current: 950 μA (maximum) Low dropout voltage: 300 mV at 2 mA (VOUT ≥ 3 V) 8-lead SOIC package and LCC package AEC-Q100 qualified for automotive applications Long-term drift: 8 ppm typical at 4500 hours

Integrated Dual RF Tx, Rx, and Observation Rx Features: Dual transmitters Dual receivers Dual input shared observation receiver Maximum receiver bandwidth: 200 MHz Maximum tunable transmitter synthesis bandwidth: 450 MHz Maximum observation receiver bandwidth: 450 MHz Fully integrated fractional-N RF synthesizers Fully integrated clock synthesizer Multichip phase synchronization for RF LO and baseband clocks JESD204B datapath interface Tuning range (center frequency): 75 MHz to 6000 MHz