The HMC431LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with an integrated resonator, negative resistance device, varactor diode, and buffer amplifier. The VCO’s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator’s monolithic structure. Power output is 2 dBm typical from a 3V supply voltage. The voltage controlled oscillator is packaged in a low cost leadless QFN 4x4 mm surface mount package.APPLICATIONS 802.11a & HiperLAN WLAN  VSAT Radios  UNII & Point-to-Point Radios

The HMC463 is a GaAs MMIC PHEMT Low Noise AGC Distributed Amplifier die which operates between 2 and 20 GHz. The amplifier provides 14 dB of gain, 2.5 dB noise figure and 19 dBm of output power at 1 dB gain compression while requiring only 60 mA from a +5V supply. An optional gate bias (Vgg2) is provided to allow Adjustable Gain Control (AGC) of 10 dB typical. Gain flatness is excellent at ±0.15 dB from 6 - 18 GHz making the HMC463 ideal for EW, ECM and RADAR applications. The HMC463 amplifiercan easily be integrated into Multi-Chip-Modules (MCMs) due to its small size. All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).Applications Telecom Infrastructure  Microwave Radio & VSAT  Military & Space  Test Instrumentation  Fiber Optics

The HMC463LP5(E) is a GaAs MMIC pHEMT Low Noise AGC Distributed Amplifier packaged in a leadless 5x5 mm surface mount package which operates between 2 and 20 GHz. The amplifier provides 13 dB of gain, 2.8 dB noise figure and 18 dBm of output power at 1 dB gain compression while requiring only 60mA from a +5V supply. An optional gate bias (Vgg2) is provided to allow Adjustable Gain Control (AGC) of 8 dB typical. Gain flatness is excellent at 0.5 dB from 6 - 18 GHz making the HMC463LP5(E) ideal for EW, ECM RADAR and test equipment applications. The HMC463LP5(E) LNA I/Os are internally matched to 50 Ohms and are internally DC blocked.Applications Telecom Infrastructure  Microwave Radio & VSAT  Military EW, ECM & C³I  Test Instrumentation  Fiber Optics

The HMC478 devices are SiGe, heterojunction bipolar transistor (HBT), gain block MMIC, SMT amplifiers covering dc to 4 GHz. These amplifiers can be used as cascadable 50 Ω RF/IF gain stages as well as LO or PA drivers with up to 17 dBm or 20 dBm output power. These amplifiers offer 22 dB or 23 dB of gain with 31 dBm, 32 dBm, or 33 dBm output IP3 at 850 MHz, while requiring only 62 mA from a single positive supply. The Darlington feedback topology results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.Applications Cellular/PCS/3G/4G Fixed wireless and WLAN CATV, cable modem, and direct broadcast satellite (DBS) Microwave radio and test equipment 

The HMC659LC5 is a GaAs MMIC PHEMT Distributed Power Amplifier which is housed in a leadless 5x5 mm RoHS compliant ceramic SMT package operating between DC and 15 GHz. The amplifier provides 19 dB of gain, +35 dBm output IP3 and +27.5 dBm of output power at 1 dB gain compression, while requiring 300mA from a +8V supply.Gain flatness is excellent at ±0.7 dB from DC - 15 GHz making the HMC659LC5 ideal for EW, ECM, Radar and test equipment applications. The HMC659LC5 amplifier I/Os are internally matched to 50 ohms with no external components. The HMC659LC5 is compatible with high volume surface mount manufacturing techniques.Applications Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics

The HMC764LP6CE is a fully functioned Fractional-N Phase-Locked-Loop (PLL) with an Integrated Voltage Controlled Oscillator (VCO). The input reference frequency range is 100 kHz to 220 MHz while the advanced delta-sigma modulator design in the fractional PLL allows both ultra-fine step sizes and very low spurious products. The highly integrated structure provides excellent phase noise performance over temperature, shock and process. The HMC764LP6CE is packaged in a leadless QFN 6 x 6 mm surface mount package. The output power is 15 dBm typical, making the HMC764LP6CE ideal for driving the LO port of many of Hittite’s Hi Linearity and I/Q mixer products.For theory of operation and register map refer to the 'PLLs w/ Integrated VCO - Microwave VCOs' Operating Guide.Applications VSAT Radio Point-to-Point / Multi-Point Radio Test Equipment & Industrial Control Military End-Use Phased Array Applications

The HMC851LC3C is a XOR/XNOR gate function designed to support data transmission rates of up to 28 Gbps, and clock frequencies as high as 28 GHz. The HMC851LC3C also features an output level control pin, VR, which allows for loss compensation or for signal level optimization.All input signals to the HMC851LC3C are terminated with 50 Ohms to ground on-chip, and may be either AC or DC coupled. The differential outputs of the HMC851LC3C may be either AC or DC coupled. Outputs can be connected directly to a 50 Ohm to ground terminated system, while DC blocking capacitors may be used if the terminating system is 50 Ohms to a nonground DC voltage. The HMC851LC3C operates from a single -3.3V DC supply, and is available in a ceramic RoHS compliant 3x3 mm SMT package.APPLICATIONS RF ATE Applications Broadband Test & Measurement Serial Data Transmission up to 28 Gbps

The HMC992LP5E is an IF analog controlled variable gain amplifier composed of two identical voltage variable attenuators in combination with an InGaP HBT gain block MMIC amplifier which operates from 0.1 to 0.8 GHz, and can be controlled to provide anywhere from -10 dB attenuation, to 40 dB of gain. The HMC992LP5E delivers noise figure of 6 dB in its maximum gain state, with output IP3 of up to +40 dBm. The HMC992LP5E is housed in a RoHS compliant 5x5 mm QFN leadless package, and requires no external matching components.Applications Cellular/3G Infrastructure WiBro / WiMAX / 4G Microwave Radio & VSAT Test Equipment and Sensors IF & RF Applications

The OP27 precision operational amplifier combines the low offset and drift of the OP07 with both high speed and low noise. Offsets down to 25 μV and maximum drift of 0.6 μV/°C make the OP27 ideal for precision instrumentation applications. Low noise, en = 3.5 nV/√Hz, at 10 Hz, a low 1/f noise corner frequency of 2.7 Hz, and high gain (1.8 million), allow accurate high-gain amplification of low-level signals. A gain bandwidth product of 8 MHz and a 2.8 V/μs slew rate provide excellent dynamic accuracy in high speed, data-acquisition systems.A low input bias current of ±10 nA is achieved by use of a bias current cancellation circuit. Over the military temperature range, this circuit typically holds IB and IOS to ±20 nA and 15 nA, respectively.The output stage has good load driving capability. A guaranteed swing of ±10 V into 600 Ω and low output distortion make the OP27 an excellent choice for professional audio applications.PSRR and CMRR exceed 120 dB. These characteristics, coupled with long-term drift of 0.2 μV/month, allow the circuit designer to achieve performance levels previously attained only by discrete designs.Low cost, high volume production of OP27 is achieved by using an on-chip Zener zap-trimming network. This reliable and stable offset trimming scheme has proven its effectiveness over many years of production history.The OP27 provides excellent performance in low noise, high accuracy amplification of low level signals. Applications include stable integrators, precision summing amplifiers, precision voltage threshold detectors, comparators, and professional audio circuits such as tape heads and microphone preamplifiers.

Rail-to-rail output swing combined with dc accuracy are the key features of the OP495 quad and OP295 dual CBCMOS operational amplifiers. By using a bipolar front end, lower noise and higher accuracy than those of CMOS designs have been achieved. Both input and output ranges include the negative supply, providing the user with zero-in/zero-out capability. For users of 3.3 V systems such as lithium batteries, the OP295/OP495 are specified for 3 V operation.Maximum offset voltage is specified at 300 μV for 5 V operation, and the open-loop gain is a minimum of 1000 V/mV. This yields performance that can be used to implement high accuracy systems, even in single-supply designs.The ability to swing rail-to-rail and supply 15 mA to the load makes the OP295/OP495 ideal drivers for power transistors and H bridges. This allows designs to achieve higher efficiencies and to transfer more power to the load than previously possible without the use of discrete components.For applications such as transformers that require driving inductive loads, increases in efficiency are also possible. Stability while driving capacitive loads is another benefit of this design over CMOS rail-to-rail amplifiers. This is useful for driving coax cable or large FET transistors. The OP295/OP495 are stable with loads in excess of 300 pF.The OP295 and OP495 are specified over the extended indus-trial (−40°C to +125°C) temperature range. The OP295 is available in 8-lead PDIP and 8-lead SOIC_N surface-mount packages. The OP495 is available in 14-lead PDIP and 16-lead SOIC_W surface-mount packages.Applications Battery-operated instrumentation Servo amplifiers Actuator drives Sensor conditioners Power supply control