The HMC8100LP6JE is a highly integrated IF receiver chip that converts radio frequency (RF) input signals ranging from 800 MHz to 4000 MHz down to a single ended intermediate frequency (IF) signal of 140 MHz at its output. The IF receiver chip is housed in a compact 6 mm x 6 mm LFCSP package and supports complex modulations up to 1024 QAM. The HMC8100LP6JE device includes two VGAs, three power detectors, a programmable AGC block, and selected integrated bandpass filters with 14 MHz, 28 MHz, 56 MHz, and 112 MHz bandwidth. The HMC8100LP6JE also supports baseband IQ interfaces after the mixer so that the chips can be used in the full ODU configuration.The HMC8100LP6JE supports all of the standard microwave frequency bands from 6 to 42 GHz.Applications Point to point communications Satellite communications Wireless microwave backhaul systemsPlease also view complimentary product HMC8200, Intermediate Frequency Transmitter 800 MHz - 4000 MHz.

The HMC833LP6GE is a low noise, wide band, Fractional-N Phase-Locked-Loop (PLL) that features an integrated Voltage Controlled Oscillator (VCO) with a fundamental frequency of 1500 MHz - 3000 MHz, and an integrated VCO Output Divider (divide by 1/2/4/6.../60/62) and doubler, that together allow the HMC833LP6GE to generate frequencies from 25 MHz to 6000 MHz. The integrated Phase Detector (PD) and delta-sigma modulator, capable of operating at up to 100 MHz, permit wider loop-bandwidths with excellent spectral performance.The HMC833LP6GE features industry leading phase noise and spurious performance, across all frequencies, that enable it to minimize blocker effects, and improve receiver sensitivity and transmitter spectral purity. The superior noise floor (< -170 dBc/Hz) makes the HMC833LP6GE an ideal source for a variety of applications - such as; LO for RF mixers, a clock source for high-frequency data-converters, or a tunable reference source for ultra-low spurious applications.Additional features of the HMC833LP6GE include RF output power control from 0 to 9 dB (3 dB steps), output Mute function, and a delta-sigma modulator Exact Frequency Mode which enables users to generate output frequencies with 0 Hz frequency error.Applications Cellular Infrastructure Microwave Radio WiMax, WiFi Communications Test Equipment CATV Equipment DDS Replacement Military Tunable Reference Source for?Spurious- Free Performance

The HMC835LP6GE is a low noise, wide band, Fractional-N PLL that features an integrated VCO with a fundamental frequency of 2020 to 4100 MHz, and an integrated VCO Output Divider (divide by 2/4/6/.../60/62) that together enable the HMC835LP6GE to generate frequencies from 33 MHz to 4100 MHz. Integrated Phase Detector (PD) and a deltasigma modulator capable of operating at up to 100 MHz enable wider loop-bandwidths, faster frequency changes along with excellent spectral performance.Two independent RF outputs, with independent gain control, enable the HMC835LP6GE to distribute identical frequency and phase signals to multiple destinations, at optimal signal levels tailored to each output.External VCO input, allows the HMC835LP6GE to lock external VCOs, and enables cascaded LO architectures for MIMO radio applications. Two separate Charge Pump (CP) outputs enable separate loop filters optimized for both integrated and external VCOs, and seamless switching between integrated or external VCOs during operation. Programmable RF output phase feature can further phase adjust and synchronize multiple HMC835LP6GEs enabling scalable MIMO and beam-forming radio architectures.Additional features include configurable output mute function that mutes RF outputs during frequency changes, Exact Frequency Mode that enables the HMC835LP6GE to generate fractional frequencies with 0 Hz frequency error, and the ability to synchronously change frequencies without changing the phase of the output signal.Applications MIMO Radio Architectures Cellular Infrastructure Cellular backhaul Communications Test Equipment CATV Equipment Phased Array Applications? DDS Replacement

The HMC1082CHIP is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), driver amplifier that operates from 5.5 GHz to 18 GHz. The HMC1082CHIP provides a typical gain of 24 dB, 36 dBm output IP3, and 25.5 dBm of output power for 1 dB compression, requiring only 220 mA from a 5 V supply voltage. The saturated output power (PSAT) is 26 dBm with 24% power added efficiency (PAE).The HMC1082CHIP is an ideal driver amplifier for a wide range of applications including point to point radios from 5.5 GHz to 18 GHz and marine radars at 9 GHz. The HMC1082CHIP can also be used for 6 GHz to 18 GHz EW and ECM applications.APPLICATIONS Software defined radios Electronics warfare (EW) Radar applications Electronic countermeasures (ECMs)

The HMC1162 is a monolithic microwave integrated circuit (MMIC), voltage controlled oscillator (VCO) that integrates the resonator, a negative resistance device, and varactor diodes, and features a half frequency output.Because of the monolithic construction of the oscillator, the output power and phase noise performance are excellent over temperature.The power output is 11 dBm typical from a 5 V supply voltage. The VCO is housed in a RoHS-compliant, 32-lead LFCSP and requires no external matching components.APPLICATIONS Point to point and multipoint radios Test equipment and industrial controls Very small aperture terminals (VSATs)

The HMC3716LP4E is a digital phase frequency detector which operates from 10 to 1300MHz. It is intended for usein low phase noise synthesizer applications.The combination of high frequency of operation along with its ultra low phase noise floor make possible synthesizerswith wide loop bandwidth and low N resulting in fast switching and very low phase noise. When used in conjunctionwith a differential loop amplifier, the HMC3716LP4E generates output voltages that can be used to phase lock a VCOto a reference oscillator.The device is packaged in a 24-pin, 4 x 4mm leadless QFN surface mount package with an exposed ground paddlefor improved RF and thermal performance.Applications Point-to-point radios Satellite communication systems Military applications Sonet clock generation

The HMC539ALP3/539ALP3E is a broadband5-bit GaAs IC digital attenuator in a low cost leadless surface mount package. This single positive control line per bit digital attenuator utilizes an offchip AC ground capacitor for near DC operation,making it suitable for a wide variety of RF and IFapplications. Covering DC to 4 GHz, the insertion loss is less than 0.7 dB typical. The attenuatorbit values are 0.25 (LSB), 0.5, 1, 2, and 4 dB for atotal attenuation of 7.75 dB. Attenuation accuracy isexcellent at ? 0.05 dB typical step error. The attenu-ator also features a high IIP3 of +62 dBm. Five TTL/CMOS control inputs are used to select each attenuation state. A single Vdd bias of +3V to +5V is required.Applications Cellular infrastructure ISM, MMDS, WLAN, WiMAX, WiBro Microwave radio and VSAT Test equipment and sensors

The HMC574AMS8E is low-cost SPDT switchin 8-lead MSOP packages for use in transmit/receive applications which requires very lowdistortion at high incident power levels. Thedevice can control signals from DC to 3 GHz andis especially suited for Cellular/3G infrastructure,WiMAX and WiBro applications with only 0.3 dBtypical insertion loss. The design provides 5 wattpower handling performance and +63 dBm thirdorder intercept at +8 Volt bias. RF1 and RF2 arereflective shorts when ?Off.?Applications Cellular/3G infrastructure Private mobile radio handsets WLAN, WiMAX and WiBro Automotive telematics Test equipment

The HMC618ALP3E is a GaAs pHEMT MMIC Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 1.2 - 2.2 GHz. The amplifier has been optimized to provide 0.75 dB noise figure, 19 dB gain and +36 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC618ALP3E shares the same package and pinout with the HMC617LP3E 0.55 - 1.2 GHz LNA. The HMC618ALP3E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. The HMC618ALP3E offers improved noise figure versus the previously released HMC375LP3(E) and the HMC382LP3(E).Applications Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femto Cells Public Safety Radio

The HMC641ALC4 is a broadband non-reflective GaAs pHEMT SP4T switch in a compact 4x4 mm ceramic package. Covering DC to 20 GHz, this switch offers high isolation, low insertion loss and on-chip termination of isolated ports. This switch also includes an on board binary decoder circuit which reduces the number of required logic control lines from four to two. The HMC641ALC4 is controlled with 0/ -5V logic, exhibits fast switching speed and consumes much less DC current than pin diode based solutions.APPLICATIONS Telecom Infrastructure Microwave Radio & VSAT Military & Space Hybrids Test Instrumentation SATCOM & Sensors