2 A, Ultralow Noise, High PSRR, Adjustable Output, RF Linear Regulator Features: Input voltage range: 2.3 V to 5.5 V Adjustable output voltage range (VOUT): 1.2 V to 3.3 V Maximum load current: 2 A Low noise 0.9 μV rms total integrated noise from 100 Hz to 100 kHz 1.6 μV rms total integrated noise from 10 Hz to 100 kHz Noise spectral density: 1.7 nV/√Hz from 10 kHz to 1 MHz Power supply rejection ratio (PSRR) 68 dB from 1 kHz to 100 kHz 45 dB at 1 MHz Dropout voltage: 200 mV typical at IOUT = 2 A, VOUT = 3.3 V Initial accuracy: ±0.6% at ILOAD = 10 mA Accuracy over line, load, and temperature: ±1.5% See data sheet for additional features

18 GHz to 44 GHz, GaAs, pHEMT, MMIC, 1/2 W Power Amplifier Features: Output P1dB: 29 dBm PSAT: 29.5 dBm Gain: 23.5 dB Output IP3: 38 dBm Supply voltage: 5 V at 800 mA Integrated power detector 50 Ω matched input/output Die size: 2.750 mm × 1.805 mm × 0.102 mm

18 GHz to 44 GHz, GaAs, pHEMT, MMIC, 1/2 W Power Amplifier Features: Output P1dB: 29 dBm PSAT: 29.5 dBm Gain: 23.5 dB Output IP3: 38 dBm Supply voltage: 5 V at 800 mA Integrated power detector 50 Ω matched input/output Die size: 2.750 mm × 1.805 mm × 0.102 mm

Ultra-Low-Noise, High-Accuracy 5.0V Voltage Reference Features: Maximum temperature coefficient (TCVOUT): 0.8 ppm/°C (D grade 0°C to 70°C) 1 ppm/°C (C grade 0°C to 70°C) 2 ppm/°C (B grade −40°C to +125°C) 4 ppm/°C (A grade 40°C to +125°C) Output noise (0.1 Hz to 10 Hz): 1 μV p-p at VOUT of 2.048 V typical Initial output voltage error: B, C, D grade: ±0.02% (maximum) Input voltage range: 3 V to 15 V Operating temperature: A grade and B grade: −40°C to +125°C C grade: 0°C to +70°C Output current: +10 mA source/−10 mA sink Low quiescent current: 950 μA (maximum) Low dropout voltage: 300 mV at 2 mA (VOUT ≥ 3 V) 8-lead SOIC package and LCC package AEC-Q100 qualified for automotive applications Long-term drift: 8 ppm typical at 4500 hours

Silicon SPDT Switch, Reflective, 9 kHz to 44 GHz Features: Ultrawideband frequency range: 9 kHz to 44 GHz Reflective design Low insertion loss with impedance match 0.9 dB typical to 18 GHz 1.4 dB typical to 40 GHz 1.6 dB typical to 44 GHz Low insertion loss without impedance match 0.9 dB typical to 18 GHz 1.7 dB typical to 40 GHz 2.2 dB typical to 44 GHz High input linearity P1dB: 27.5 dBm typical IP3: 50 dBm typical High RF input power handling Through path: 27 dBm Hot switching: 27 dBm No low frequency spurious RF settling time (50% VCTL to 0.1 dB final RF output): 3.4 μs 12-terminal, 2.25 mm × 2.25 mm LGA package Pin compatible with the ADRF5024 fast switching version

Silicon SPDT Switch, Nonreflective, 100 MHz to 44 GHz Features: Ultrawideband frequency range: 100 MHz to 44 GHz Nonreflective design Low insertion loss: 1.2 dB to 18 GHz 1.7 dB to 26 GHz 2.4 dB to 40 GHz 3.8 dB to 44 GHz High isolation 55 dB to 18 GHz 53 dB to 26 GHz 50 dB to 40 GHz 45 dB to 44 GHz High input linearity P1dB: 27 dBm typical IP3: 53 dBm typical High power handling 24 dBm insertion loss path 24 dBm isolation path All off state control No low frequency spurious signals 0.1 dB RF settling time: 40 ns typical 20-terminal, 3 mm × 3 mm LGA package Pin compatible with ADRF5027, low frequency cutoff versionADRF5026-EP supports defense and aerospace applications (AQEC standard) Download ADRF5026-EP data sheet (pdf) Supports defense and aerospace applications (AQEC standard) Military temperature range (−55°C to +105°C) Controlled manufacturing baseline 1 assembly/test site 1 fabrication site Product change notification Qualification data available on request V62/21601 DSCC Drawing Number

Nonreflective, 9 kHz to 44 GHz Silicon SP4T Switch Features: Ultrawideband frequency range: 9 kHz to 44 GHz Nonreflective 50 Ω design Low insertion loss: 1.5 dB at 18 GHz 2.4 dB at 40 GHz 2.5 dB at 44 GHz High isolation: 44 dB at 18 GHz 39 dB at 40 GHz 36 dB at 44 GHz High input linearity: P0.1dB: 26 dBm typical IP3: 48 dBm typical High power handling 24 dBm through path 24 dBm terminated path All off state control Logic select control No low frequency spurs Settling time (0.1 dB final RF output): 6 μs 24-terminal, 3 mm × 3 mm LGA package Pin compatible with ADRF5042, fast switching version

Integrated Optical Module with Ambient Light Rejection and Two LEDs Features: 3.8 mm × 5.0 mm × 0.9 mm module with integrated optical components 2 green LEDs, 2 PDs with IR cut filter 2 external sensor inputs 3, 370 mA LED drivers 20-bit burst accumulator enabling 20 bits per sample period On-board sample to sample accumulator enabling up to 27 bits per data read Custom optical package made to work under a glass window Optimized SNR for signal limited cases I2C or SPI communications

0.5C Accurate, 16-Bit Digital SPI Temperature Sensor Features: Easy implementation No temperature calibration/correction required by user No linearity correction required Low power Power saving 1 sample per second (SPS) mode 700 µW typical at 3.3 V in normal mode 7 µW typical at 3.3 V in shutdown mode High performance Temperature accuracy ±0.5°C from −40°C to +105°C (2.7 V to 3.6 V) ±0.4°C from −40°C to +105°C (3.0 V) 16-bit temperature resolution: 0.0078°C Fast first temperature conversion on power-up of 6 ms See datasheet for additional features

0.5C Accurate, 16-Bit Digital I2C Temperature Sensor Features: High performance Temperature accuracy ±0.5°C from −40°C to +105°C (2.7 V to 3.6 V) ±0.4°C from −40°C to +105°C (3.0 V) 16-bit temperature resolution: 0.0078°C Fast first temperature conversion on power-up of 6 ms Easy implementation No temperature calibration/correction required by user No linearity correction required Low power Power saving 1 sample per second (SPS) mode 700 µW typical at 3.3 V in normal mode 7 µW typical at 3.3 V in shutdown mode Wide operating ranges Temperature range: −55°C to +150°C Voltage range: 2.7 V to 5.5 V Programmable interrupts Critical overtemperature interrupt Overtemperature/undertemperature interrupt I2C-compatible interface 8-lead narrow SOICRoHS-compliant package