2, 31.76 W, Digital Input, Filterless Stereo Class D Audio Amplifier Features: Digital input stereo, high efficiency Class-D amplifier Operates from a single 4.5 V to 16.5 V supply State-of-the-art, proprietary, filterless - modulation 106.5 dB SNR at PO = 8.1 W, RL = 8 , AV = 19 dB, PVDD = 12 V, A weighted 0.004% THD + N at 5 W into 8 38.5 V rms output voltage noise, f = 20 Hz to 20 kHz, A weighted, PVDD = 16 V, 8 Pop and clickless on and off sequence 2 14.67 W output at 12 V supply to 4 loads at <1% THD + N 2 14.4 W output at 16 V supply to 8 loads at <1% THD + N Mono mode for increased maximum output power 1 49.69 W output at 16 V supply to 2 loads at <1% THD + N Support for low impedance loads As low as 3 Ω/5 μH in stereo mode As low as 2 Ω/5 μH in mono mode High power efficiency 93.8% efficiency into an 8 Ω load 90.6% efficiency into a 4 Ω load 12.34 mA quiescent current with single 12 V PVDD supply Single-supply operation with internal LDOs or option to use an external 5 V and 1.8 V supply for lowest power consumption I2C control and hardware modes with up to 16 pin-selectable slots/addresses Supported sample rates from 8 kHz to 192 kHz with 24-bit resolution Multiple PCM audio serial data formats TDM slave with support for up to 16 devices on a single bus I2S or left justified slave Adjustable full-scale output tailored for many PVDD sources 2- and 3-cell Li-Ion batteries Digital volume control with selectable smooth ramp Automatic power-down function Supply monitoring automatic gain control (AGC) function reduces system brownout Standalone operational mode without I2C Temperature sensor with 1°C step readout via I2C Short-circuit, undervoltage, and thermal protection Thermal early warning Power-on reset PVDD sensing ADC 40-lead, 6 mm × 6 mm LFCSP with thermal pad

Ultra Low Power, Class-D Audio Amplifier Features: Filterless digital input, mono differential output Class-D amplifier with 3-level Σ-Δ modulation optimized for headphone drive Operates from single 1.8 V supply 80 mW output power, 16 Ω load at <0.1% THD + N 2.57 μV rms noise, 113 dB A weighted signal-to-noise ratio and dynamic range 0.003% THD + N at 30 mW, 1 kHz output 32 Ω load I2C control with up to 4 pin selectable addresses or standalone operation Multiple serial data formats TDM, I2S, or left justified slave PDM input operating from 2.8224 MHz to 12.288 MHz Support sample rates from 8 kHz to 768 kHz 3.9 μs latency with 6 MHz PDM input Flexible digital gain adjustment DC blocking high-pass filter with programmable corner frequency 1.55 mW typical idle power in high performance mode Low power modes for reduced power consumption Flexible output gain limiter and clipping Auto power-down feature with zero digital input Short-circuit protection Pop and click suppression User-selectable ultralow EMI emissions mode Power-on reset 1.8 V PVDD supply 1.2 V to 1.8 V IOVDD supply 11-ball, 0.984 mm × 1.444 mm, 0.35 mm pitch WLCSP

RapID Platform Generation 2 (RPG2) Network Interface Features: Configurable industrial protocol support PROFINET RT (Class B) PROFINET IRT (Class C): coming soon EtherNet/IP with DLR EtherCAT All protocols precertified Configurable applications processor interface UART: 115,200 bps to 1,000,000 bps Ethernet at 10 Mbps or 100 Mbps SPI follower: 10 MHz maximum clock I2C, QSPI, and CAN: future option Industrial Ethernet interface-compliant to IEEE 802.3, 10Base or 100Base transmit half and full duplex Single 3.3 V power supply, 840 mW Cycle time down to 1 ms (cycle times vary based on protocol, link type, and application data) 194-ball chip-scale package BGA form factor RoHS 3 compliant –40°C to +85°C industrial temperature range

Up to 1 GHz Dual-SHARC+ DSP w/ Integrated Arm Cortex-A5 Features:SHARC+ Core Infrastructure 800 MHz (max) or 1 GHz (max) Core clock frequency 2x 640KB on-chip Level 1 (L1) SRAM memory (with parity) increases low latency performance 32-bit, 40-bit & 64-bit floating point support 32-bit fixed point Byte, short-word, word, long-word addressedArm Core Infrastructure: 1 GHz Arm Cortex-A5 (with Neon/FPU) 32 kByte/32 kByte L1 Instr./Data Cache 256 kByte L2 CacheMemory 2048 KB on-chip Level 2 (L2) SRAM with ECC protection - eliminates need for external memory in many use cases Level 3 (L3) interface optimized for low system power, providing 16-bit interface to DDR3 (supporting 1.35 V capable DDR3L devices)16-bit DDR/DDR3L Memory Controller 1.35V support for DDR3LAdvanced Hardware Accelerators Enhanced FIR/IIR offload engines running at Core clock frequency for added processing power Security Crypto Engines with OTPPowerful DMA SystemInnovative Digital Audio Interface (DAI) includes: 8x Full SPORT interfaces w/TDM & I2S modes 2x S/PDIF Rx/Tx, 8 ASRC pairs 8x Precision Clock Generators 2x 4-channel PDM Mic Inputs 40 BuffersOther Peripheral Connectivity / Interfaces: 2x Quad SPI, 1x Octal SPI MLB 3-pin / 6-pin 6x I2C,3x UARTs 2x Link Ports 16x General Purpose Timer, 1x General Purpose Counter 3x Watchdog Timers ePPI USB 2.0 HS OTG Controller 10/100 EMAC 10/100/1000 EMAC w/AVB and 1588 2x CAN FD 8-ch 12bit Housekeeping ADC 135 GPIO pins, 40 DAI pins Thermal SensorPackage 17mm x 17mm (0.8mm pitch) 400-ball FCBGAAdditional Features Security and Protection Crypto hardware accelerators Fast secure boot with IP protection Enhanced FIR and IIR accelerators running up to 1 GHz AEC-Q100 qualified for automotive applications

10 W (40 dBm), 0.01 GHz to 1.1 GHz, GaN Power Amplifier Features: High small signal gain: 20 dB typical POUT: 41.5 dBm typical at PIN = 27 dBm High PAE: 60% typical at PIN = 27 dBm Instantaneous bandwidth: 0.01 GHz to 1.1 GHz across all frequencies Supply voltage: VDD = 28 V at a quiescent current of 100 mA Internal prematching Simple and compact external tuning for optimal performance 5 mm × 5 mm, 32-lead LFCSP

GaAs MMIC DBL-BAL Mixer, 3.5 - 8 GHz Features: Passive Double-Balanced Topology Input IP3 : +17 dBm Low Conversion Loss: 7 dB LO / RF Isolation: 38 dB LO / IF Isolation: 32 dB Upconverter & Downconverter Applications

Low Noise Amplifier SMT, 350 - 550 MHz Features: Noise Figure: ≤1 dB Output IP3: +38 dBm Gain: 17 dB Very Stable Gain vs. Supply & Temp Single Supply: +5V @ 104 mA 50 Ohm Matched Output

Medium Power Amplifier SMT, 5 - 20 GHz Features: Gain: 19 dB Saturated Power: +21 dBm @ 21% PAE Output IP3: +30 dBm Single Supply: +5V @ 114 mA 50 Ohm Matched Input/Output RoHS Compliant 3x3 mm SMT package

GaAs pHEMT MMIC Low Noise Amplifier, DC - 20 GHz Features: Noise Figure: 2.5 dB @ 10 GHz Gain: 14 dB @ 10 GHz P1dB Output Power: +16.5 dBm @ 10 GHz Supply Voltage: +8V @ 75 mA 50 Ohm Matched Input/Output 32 Lead Ceramic 5 x 5 mm SMT Package: 25 mm2

1 dB LSB GaAs MMIC 3-Bit Digital Positive Control Attenuator, DC-6 GHz Features: 1 dB LSB Steps to 7 dB High IP3: +55 dBm ±0.25 dB Typical Bit Error Single Control Line Per Bit Single +5V Supply 16 Lead 3×3 mm SMT Package: 9 mm2