Precision Analog Microcontroller, 16-Bit Analog Input/Output with MDIO Interface, Arm Cortex-M33 Features: Analog input/output Multichannel, 16-bit, 2 MSPS ADC Up to 16 external channels On-chip die temperature monitor 4 power monitor channels 4 PGA/TIA channels supporting voltage and current measurements Fully differential and single-ended modes 0 V to VREF analog input range 12-bit voltage output DACs 8× 0 V to 2.5 V, 1 kΩ load 4× 0 V to 2.5 V, 2.5 kΩ load On-chip low drift voltage reference, 1.25 V or 2.5 V Buffered 1.25 V or 2.5 V output 4 voltage comparators Microcontroller 32-bit Arm Cortex-M33 core, 32-bit RISC architecture, FPU Serial wire port supports code download and debug Clocking options 16 MHz on-chip oscillator 160 MHz PLL output with programmable divider External clock source Memory 2× 512 kB independent Flash/EE memories 10,000-cycle Flash/EE endurance 20-year Flash/EE retention 128 kB SRAM with ECC Software triggered, in circuit reprogrammability via MDIO or I2C On-chip peripherals 2× UART, 3× SPI, 3× I2C serial input/output Multilevel voltage (3.3 V, 1.8 V, 1.2 V) GPIOs MDIO slave up to 10 MHz 5 general-purpose timers Wake-up timer (WUTs) Watchdog timers (WDTs) 32-element PLA 16-bit PWM 10 external Interrupts Power Multiple supplies: 3.3 V for voltage DACs and ADCs, and 3.3 V, 1.8 V, or 1.2 V for digital inputs/outputs Flexible operating modes for low power applications Packages and temperature range 5 mm × 5 mm 81-ball CSP_BGA and 3.46 mm × 3.46 mm 64-ball WLCSP BGA package uses ULA molding compounds Fully specified for −40°C to +105°C operation Tools Low cost quick start development system Full third-party support  

3.0 kV rms, Dual-Channel Digital Isolators Features: High common-mode transient immunity: 100 kV/µs typical High robustness to radiated and conducted noise Low propagation delay 13 ns maximum for 5 V operation 15 ns maximum for 1.8 V operation 150 Mbps minimum data rate Safety and regulatory approvals UL recognition: 3000 V rms for 1 minute per UL 1577 CSA Component Acceptance Notice 5A VDE certificate of conformity DIN VDE V 0884-11:2017-01 VIORM = 565 V peak CQC certification per GB4943.1-2011 Backward compatibility ADuM120N0 pin-compatible with ADuM1285 ADuM120N1 pin-compatible with ADuM1280 and ADuM1200 ADuM121N0 pin-compatible with ADuM1286 ADuM121N1 pin-compatible with ADuM1281 and ADuM1201 Low dynamic power consumption 1.8 V to 5 V level translation High temperature operation: 125°C Failsafe high or low options 8-lead, RoHS-compliant, SOIC package Qualified for automotive applications

Micropower, Dual-Channel Digital Isolators, Default High (2/0 Channel Directionality) Features: Ultralow power operation 3.3 V operation 6 μA per channel quiescent current, refresh enabled 0.3 μA per channel quiescent current, refresh disabled 148 μA/Mbps per channel typical dynamic current 2.5 V operation 3 μA per channel quiescent current, refresh enabled 0.1 μA per channel quiescent current, refresh disabled Quad-channel products available See datasheet for additional features

3kV rms, Default Low, Dual-Channel Digital Isolators (2/0 Channel Directionality) Features: Up to 100 Mbps data rate (NRZ) Low propagation delay: 23 ns typical Low dynamic power consumption Bidirectional communication 3.3 V to 5 V level translation High temperature operation: 125°C High common-mode transient immunity: >25 kV/μs Default high output: ADuM1280/ADuM1281 Default low output: ADuM1285/ADuM1286 Narrow body, RoHS-compliant, 8-lead SOIC Safety and regulatory approvals UL recognition: 3000 V rms for 1 minute per UL 1577 CSA Component Acceptance Notice 5A VDE Certificate of Conformity DIN V VDE V 0884-10 (VDE V 0884-10): 2006-12 VIORM = 560 V peak Qualified for automotive applications

Quad-Channel Digital Isolator (3/1 Channel Directionality) Features: Qualified for automotive applications Low power operation Bidirectional communication 3 V/5 V level translation High temperature operation: 125°C High data rate: dc to 90 Mbps (NRZ) Precise timing characteristics High common-mode transient immunity: >25 kV/μs See data sheet for additional features

Ultra-Low-Noise, High-Accuracy 4.096V Voltage Reference Features: Maximum temperature coefficient (TCVOUT): 0.8 ppm/°C (D grade 0°C to 70°C) 1 ppm/°C (C grade 0°C to 70°C) 2 ppm/°C (B grade −40°C to +125°C) 4 ppm/°C (A grade 40°C to +125°C) Output noise (0.1 Hz to 10 Hz): 1 μV p-p at VOUT of 2.048 V typical Initial output voltage error: B, C, D grade: ±0.02% (maximum) Input voltage range: 3 V to 15 V Operating temperature: A grade and B grade: −40°C to +125°C C grade: 0°C to +70°C Output current: +10 mA source/−10 mA sink Low quiescent current: 950 μA (maximum) Low dropout voltage: 300 mV at 2 mA (VOUT ≥ 3 V) 8-lead SOIC package and LCC package AEC-Q100 qualified for automotive applications Long-term drift: 8 ppm typical at 4500 hours

Ultra-Low-Noise, High-Accuracy 5.0V Voltage Reference Features: Maximum temperature coefficient (TCVOUT): 0.8 ppm/°C (D grade 0°C to 70°C) 1 ppm/°C (C grade 0°C to 70°C) 2 ppm/°C (B grade −40°C to +125°C) 4 ppm/°C (A grade 40°C to +125°C) Output noise (0.1 Hz to 10 Hz): 1 μV p-p at VOUT of 2.048 V typical Initial output voltage error: B, C, D grade: ±0.02% (maximum) Input voltage range: 3 V to 15 V Operating temperature: A grade and B grade: −40°C to +125°C C grade: 0°C to +70°C Output current: +10 mA source/−10 mA sink Low quiescent current: 950 μA (maximum) Low dropout voltage: 300 mV at 2 mA (VOUT ≥ 3 V) 8-lead SOIC package and LCC package AEC-Q100 qualified for automotive applications Long-term drift: 8 ppm typical at 4500 hours

Silicon SPDT Switch, Reflective, 9 kHz to 44 GHz Features: Ultrawideband frequency range: 9 kHz to 44 GHz Reflective design Low insertion loss with impedance match 0.9 dB typical to 18 GHz 1.4 dB typical to 40 GHz 1.6 dB typical to 44 GHz Low insertion loss without impedance match 0.9 dB typical to 18 GHz 1.7 dB typical to 40 GHz 2.2 dB typical to 44 GHz High input linearity P1dB: 27.5 dBm typical IP3: 50 dBm typical High RF input power handling Through path: 27 dBm Hot switching: 27 dBm No low frequency spurious RF settling time (50% VCTL to 0.1 dB final RF output): 3.4 μs 12-terminal, 2.25 mm × 2.25 mm LGA package Pin compatible with the ADRF5024 fast switching version

Silicon SPDT Switch, Nonreflective, 100 MHz to 44 GHz Features: Ultrawideband frequency range: 100 MHz to 44 GHz Nonreflective design Low insertion loss: 1.2 dB to 18 GHz 1.7 dB to 26 GHz 2.4 dB to 40 GHz 3.8 dB to 44 GHz High isolation 55 dB to 18 GHz 53 dB to 26 GHz 50 dB to 40 GHz 45 dB to 44 GHz High input linearity P1dB: 27 dBm typical IP3: 53 dBm typical High power handling 24 dBm insertion loss path 24 dBm isolation path All off state control No low frequency spurious signals 0.1 dB RF settling time: 40 ns typical 20-terminal, 3 mm × 3 mm LGA package Pin compatible with ADRF5027, low frequency cutoff versionADRF5026-EP supports defense and aerospace applications (AQEC standard) Download ADRF5026-EP data sheet (pdf) Supports defense and aerospace applications (AQEC standard) Military temperature range (−55°C to +105°C) Controlled manufacturing baseline 1 assembly/test site 1 fabrication site Product change notification Qualification data available on request V62/21601 DSCC Drawing Number

Nonreflective, 9 kHz to 44 GHz Silicon SP4T Switch Features: Ultrawideband frequency range: 9 kHz to 44 GHz Nonreflective 50 Ω design Low insertion loss: 1.5 dB at 18 GHz 2.4 dB at 40 GHz 2.5 dB at 44 GHz High isolation: 44 dB at 18 GHz 39 dB at 40 GHz 36 dB at 44 GHz High input linearity: P0.1dB: 26 dBm typical IP3: 48 dBm typical High power handling 24 dBm through path 24 dBm terminated path All off state control Logic select control No low frequency spurs Settling time (0.1 dB final RF output): 6 μs 24-terminal, 3 mm × 3 mm LGA package Pin compatible with ADRF5042, fast switching version