Integrated Precision Battery Sensor for Automotive Features:HIGH PRECISION ADCS Dual channel, simultaneous sampling, 16-bit, Σ-Δ ADCs Programmable ADC throughput from 1 Hz to 8 kHz On-chip 5 ppm/°C voltage reference Current channel Fully differential, buffered input Programmable gain from 1 to 512 ADC input range: −200 mV to +300 mV Digital comparators, with current accumulator feature Voltage channel Buffered, on-chip attenuator for 12 V battery inputs Temperature channel External and on-chip temperature sensor optionsMICROCONTROLLER ARM7TDMI® core, 16-/32-bit RISC architecture 20.48 MHz PLL with programmable divider PLL input source On-chip precision oscillator On-chip low power oscillator External (32.768 kHz) watch crystal JTAG port supports code download and debugMEMORY 96-kB Flash/EE memory, 6-kB SRAM 10,000-cycle Flash/EE endurance, 20-year Flash/EE retention In-circuit download via JTAG and LINON-CHIP PERIPHERALS SAEJ2602/LIN 1.3/LIN 2.0-compatible (slave) support via UART with hardware synchronization Flexible wake-up I/O pin, master/slave SPI® serial I/O 9-pin GPIO port, 3× general-purpose timers Wake-up and watchdog timers Power supply monitor, on-chip power-on-resetPOWER Operates directly from 12 V battery supply Current consumption Normal mode 10 mA at 10 MHz Low power monitor modePACKAGE AND TEMPERATURE RANGE 48-lead, 7 mm × 7 mm LFCSP Fully specified for −40°C to +115°C operation

Single-/Dual-Supply, High Voltage Isolated IGBT Gate Driver Features: 4 A peak drive output capability Output power device resistance < 1Ω Desaturation protection Isolated Fault output Soft Shutdown on Fault Isolated Fault and Ready functions Low propagation delay 55 ns typical Minimum pulse width: 50 ns Operating temperature range: −40°C to +125°C Output voltage range to 35 V See data sheet for additional features

3-Axis, 2 g/4 g/8 g/16 g Ultralow Power Digital Accelerometer Features: Multipurpose accelerometer with 10- to 13-bit resolution for use in a wide variety of applications Digital output accessible via SPI (3- and 4-wire) and I2C Built-in motion detection features make tap, double-tap, activity, inactivity, orientation, and free-fall detection trivial user-adjustable thresholds interrupts independently mappable to two interrupt pins Low power operation down to 23 μA and embedded FIFO for reducing overall system power Wide supply and I/O voltage range: 1.7 V to 2.75 V Wide operating temperature range (−40°C to +85°C) 10,000 g shock survival Small, thin Pb free, RoHS compliant 3 mm × 3 mm × 0.95 mm LGA package

Low Noise, Low Drift, Low Power, 3-Axis MEMS Accelerometers with Digital Output Features: Hermetic package offers optimal long-term stability 0 g offset vs. temperature (all axes): 0.75 mg/°C maximum Ultralow noise spectral density (all axes): 75 μg/√Hz Low power, VSUPPLY (LDO regulator enabled) Measurement mode: 200 μA Standby mode: 21 μA Digital output features Digital SPI and limited I2C interfaces supported 20-bit ADC Data interpolation routine for synchronous sampling Programmable high- and low-pass digital filters Integrated temperature sensor Voltage range options VSUPPLY with internal regulators: 2.25 V to 3.6 V V1P8ANA, V1P8DIG with internal LDO regulator bypassed: 1.8 V typical ± 10% Operating temperature range: −40°C to +125°C 14-terminal, 6 mm × 5.6 mm × 2.2 mm, LCC package

3-Axis, 200 g Digital MEMS Accelerometer Features: Low power: as low as 35 µA in measurement mode and 0.1 µA in standby mode at VS = 2.5 V (typical) Power consumption scales automatically with bandwidth Embedded, 32-level FIFO buffer minimizes processor load Bandwidth of up to 1 kHz Bandwidth selectable via serial command Shock event detection Activity/inactivity monitoring Supply voltage range: 2.0 V to 3.6 V I/O voltage range: 1.7 V to VS SPI (3- or 4-wire) and I2C digital interfaces Wide temperature range: −40°C to +85°C 10,000 g shock survival Pb free/RoHS compliant Small and thin: 3 mm × 5 mm × 1 mm LGA packageADXL375-EP supports defense and aerospace applications (AQEC standard)Download ADXL375-EP Data Sheet (pdf)Extended industrial temperature range: −55°C to +105°CControlled manufacturing baseline1 assembly/test site1 fabrication siteProduct change notificationQualification data available on requestV62/ 18612 DSCC Drawing Number

2, 31.76 W, Digital Input, Filterless Stereo Class D Audio Amplifier Features: Digital input stereo, high efficiency Class-D amplifier Operates from a single 4.5 V to 16.5 V supply State-of-the-art, proprietary, filterless - modulation 106.5 dB SNR at PO = 8.1 W, RL = 8 , AV = 19 dB, PVDD = 12 V, A weighted 0.004% THD + N at 5 W into 8 38.5 V rms output voltage noise, f = 20 Hz to 20 kHz, A weighted, PVDD = 16 V, 8 Pop and clickless on and off sequence 2 14.67 W output at 12 V supply to 4 loads at <1% THD + N 2 14.4 W output at 16 V supply to 8 loads at <1% THD + N Mono mode for increased maximum output power 1 49.69 W output at 16 V supply to 2 loads at <1% THD + N Support for low impedance loads As low as 3 Ω/5 μH in stereo mode As low as 2 Ω/5 μH in mono mode High power efficiency 93.8% efficiency into an 8 Ω load 90.6% efficiency into a 4 Ω load 12.34 mA quiescent current with single 12 V PVDD supply Single-supply operation with internal LDOs or option to use an external 5 V and 1.8 V supply for lowest power consumption I2C control and hardware modes with up to 16 pin-selectable slots/addresses Supported sample rates from 8 kHz to 192 kHz with 24-bit resolution Multiple PCM audio serial data formats TDM slave with support for up to 16 devices on a single bus I2S or left justified slave Adjustable full-scale output tailored for many PVDD sources 2- and 3-cell Li-Ion batteries Digital volume control with selectable smooth ramp Automatic power-down function Supply monitoring automatic gain control (AGC) function reduces system brownout Standalone operational mode without I2C Temperature sensor with 1°C step readout via I2C Short-circuit, undervoltage, and thermal protection Thermal early warning Power-on reset PVDD sensing ADC 40-lead, 6 mm × 6 mm LFCSP with thermal pad

10 W (40 dBm), 0.01 GHz to 1.1 GHz, GaN Power Amplifier Features: High small signal gain: 20 dB typical POUT: 41.5 dBm typical at PIN = 27 dBm High PAE: 60% typical at PIN = 27 dBm Instantaneous bandwidth: 0.01 GHz to 1.1 GHz across all frequencies Supply voltage: VDD = 28 V at a quiescent current of 100 mA Internal prematching Simple and compact external tuning for optimal performance 5 mm × 5 mm, 32-lead LFCSP

Ultralow Noise, 150 mA CMOS Linear Regulator Features: Chinese data sheet available Ultralow noise: 9 μV rms, independent of VOUT No additional noise bypass capacitor required Stable with 1 μF ceramic input and output capacitors Maximum output current: 150 mA Input voltage range: 2.2 V to 5.5 V Low quiescent current IGND = 10 μA with zero load Low shutdown current: <1 μA Low dropout voltage: 105 mV at 150 mA load Initial output voltage accuracy: ±1% Up to 14 fixed output voltage options: 1.8 V to 3.3 V PSRR performance of 70 dB at 10 kHz Current limit and thermal overload protection Logic-controlled enable 5-lead TSOT package 4-ball, 0.8 mm × 0.8 mm, 0.4 mm pitch WLCSP AEC-Q100 qualified for automotive applications

High Voltage, 1.5A, 500kHz Step-Down Switching Regulators Features: Wide Input Range: 5.5V to 60V 1.5A Peak Switch Current Small 16-Pin SSOP Package or Thermally Enhanced TSSOP Package Saturating Switch Design: 0.2Ω Peak Switch Current Maintained Over Full Duty Cycle Range Constant 500kHz Switching Frequency Effective Supply Current: 2.5mA Shutdown Current: 25µA 1.2V Feedback Reference (LT1956) 5V Fixed Output (LT1956-5) Easily Synchronizable Cycle-by-Cycle Current Limiting

FAILSAFE SWITCH, SPST, 6GHZ, SOT-26;