GaAs, pHEMT, MMIC, 1 W, Power Amplifier with Power Detector, 37 GHz to 40 GHz Features: 32 dBm typical saturated output power (PSAT) at 18% power added efficiency (PAE) at 39 GHz P1dB compression output power: 31.5 dBm typical High output third-order intercept (IP3): 40 dBm typical High gain: 24 dB typical 50 Ω matched input/output Ceramic, 6 mm × 6 mm, high frequency, air cavity package

26 GHz, T Flip-Flop w/Reset Features: Supports Clock Frequencies up to 26 GHz Differential & Singe-Ended Operation Fast Rise and Fall Times: 18/17 ps Low Power Consumption: 270 mW typ. Propagation Delay: 95 ps Single Supply: -3.3V 16 Lead Ceramic 3×3mm SMT Package: 9mm2

Wideband VCO SMT w/Buffer Amplifier SMT, 6 - 12 GHz Features: Wide Tuning Bandwidth Pout: +1 dBm Low SSB Phase Noise: -95 dBc/Hz @100 kHz No External Resonator Needed Single Positive Supply: +5V @ 57 mA 24 Lead 4x4mm SMT Package: 16mm2

9 GHz to 12 GHz, GaAs, MMIC, I/Q Downconverter Features: Conversion gain: 11 dB (typical) at IFOUT = 100 MHz Image rejection: 25 dB (typical) at IFOUT = 100 MHz LO to RF isolation: 46 dB (typical) LO to IF isolation: 26 dB (typical) IF output frequency: dc to 3.5 GHz 32-lead, 4.9 mm × 4.9 mm ceramic leadless chip carrier

5.6 GHz to 8.6 GHz, GaAs, MMIC, I/Q Downconverter Features: Conversion gain: 13 dB typical Image rejection: 32 dBc typical Input P1dB compression: −6 dBm typical Input IP3: 3 dBm typical, 6.0 GHz to 8.6 GHz Noise figure: 2 dB typical LO to RF isolation: 48 dBm typical LO to IF isolation: 13 dBm typical RF to IF isolation: 10 dBm typical Amplitude balance: 0.2 dB typical Phase balance: −2° typical RF return loss: 10 dB typical LO return loss: 15 dB typical IF return loss: 15 dB typical Exposed paddle, 4 mm × 4 mm, 24-lead, LFCSP

Multichannel ISM Band FSK/GFSK/OOK/GOOK/ASK Transmitter Features: Single-chip, low power UHF transmitter 75 MHz to 1 GHz frequency operation Multichannel operation using fractional-N PLL 2.3 V to 3.6 V operation On-board regulator Programmable output power −16 dBm to +14 dBm, 0.4 dB steps Data rates: dc to 179.2 kbps Low current consumption 868 MHz, 10 dBm, 21 mA 433 MHz, 10 dBm, 17 mA 315 MHz, 0 dBm, 10 mA Programmable low battery voltage indicator 24-lead TSSOP

I2C CMOS 8 10 Unbuffered Analog Switch Array with Dual/Single Supplies Features: I2C-compatible Interface 3.4 MHz High Speed I2C Option 32-lead LFCSP_VQ (5 mm × 5 mm) Double-buffered Input Logic Simultaneous Update of Multiple Switches Up to 300 MHz Bandwidth Fully Specified at Dual ±5 V/single +12 V Operation On Resistance 35 Ω Maximum Low Quiescent Current < 20 μA

User Defined Fault Protection and Detection, 0.8 pC QINJ, 8:1 Multiplexer Features: User defined secondary supplies set overvoltage level Overvoltage protection up to −55 V and +55 V Power-off protection up to −55 V and +55 V Overvoltage detection on source pins Minimum secondary supply level: 4.5 V single-supply Interrupt flags indicate fault status Low charge injection (QINJ): 0.8 pC Low drain/source on capacitance: 19 pF Latch-up immune under any circumstance Known state without digital inputs present VSS to VDD analog signal range ±5 V to ±22 V dual-supply operation 8V to 44 V single-supply operation Fully specified at ±15 V, ±20 V, +12 V, and +36 V 

0.4 CMOS, Dual DPDT Switch in WLCSP/LFCSP/TSSOP Features: 1.8 V to 5.5 V operation Ultralow on resistance 0.4 Ω typical 0.6 Ω maximum at 5 V supply Excellent audio performance, ultralow distortion 0.07 Ω typical 0.14 Ω maximum RON flatness High current carrying capability 400 mA continuous 600 mA peak current at 5 V Automotive temperature range: −40°C to +125°C Rail-to-rail switching operation Typical power consumption (<0.1 μW)

0 Hz/dc to 14 GHz, Single-Pole, Four-Throw MEMS Switch with Integrated Driver Features: Fully operational down to 0 Hz/dc On resistance: 2.9 Ω (maximum) Off leakage: 0.5 nA (maximum) −3 dB bandwidth 11 GHz (typical) for RF1, RF4 14 GHz (typical) for RF2, RF3 RF performance characteristics Insertion loss: 0.26 dB (typical) at 2.5 GHz Isolation: 24 dB (typical) at 2.5 GHz IIP3: 69 dBm (typical) RF power: 36 dBm (maximum) Actuation lifetime: 1 billion cycles (minimum) Hermetically sealed switch contacts On switching time: 75 μs (maximum) Integrated driver removes the need for an external driver Supply voltage: 3.0 V to 3.6 V CMOS-/LVTTL-compatible Parallel and SPI interface Independently controllable switches Switch is in an open state with no power supply present Requirement to avoid floating nodes on all RFx pins (see the Floating Node section in data sheet) 24-lead, 5 mm × 4 mm × 0.95 mm, LFCSP Operating temperature range: 0°C to 85°C