1.2 A, Ultralow Noise, High PSRR, Adjustable Output, RF Linear Regulator Features: Input voltage range: 2.3 V to 5.5 V Adjustable output voltage range (VOUT): 1.2 V to 3.3 V Maximum load current: 1.2 A Low noise 0.9 µV rms typical output noise from 100 Hz to 100 kHz 1.6 µV rms typical output noise from 10 Hz to 100 kHz Noise spectral density: 1.7 nV/√Hz from 10 kHz to 1 MHz Power supply rejection ratio (PSRR) 82 dB from 1 kHz to 100 kHz 55 dB at 1 MHz Dropout voltage: 120 mV typical at IOUT = 1.2 A, VOUT = 3.3 V Initial accuracy: ±0.6% at ILOAD = 10 mA Accuracy over line, load, and temperature: ±1.5% Operating supply current (IGND) 4.0 mA typical at 0 µA 7.0 mA typical at 1.2 A Low shutdown current: 0.2 μA typical Stable with a 10 µF ceramic output capacitor 10-lead, 3 mm × 3 mm LFCSP and 8-lead SOIC packages Precision enable Supported by ADIsimPower tool

2 A, Ultralow Noise, High PSRR, Adjustable Output, RF Linear Regulator Features: Input voltage range: 2.3 V to 5.5 V Adjustable output voltage range (VOUT): 1.2 V to 3.3 V Maximum load current: 2 A Low noise 0.9 μV rms total integrated noise from 100 Hz to 100 kHz 1.6 μV rms total integrated noise from 10 Hz to 100 kHz Noise spectral density: 1.7 nV/√Hz from 10 kHz to 1 MHz Power supply rejection ratio (PSRR) 68 dB from 1 kHz to 100 kHz 45 dB at 1 MHz Dropout voltage: 200 mV typical at IOUT = 2 A, VOUT = 3.3 V Initial accuracy: ±0.6% at ILOAD = 10 mA Accuracy over line, load, and temperature: ±1.5% See data sheet for additional features

Charge Pump, 7-Channel Smart LED Driver with I2C Interface Features: Charge pump with automatic gain selection of 1×, 1.5×, and 2× for maximum efficiency 7 independent, programmable LED drivers 7 drivers capable of 30 mA (typical) 1 driver also capable of 60 mA (typical) Programmable maximum current limit (128 levels) Standby mode for <1 μA current consumption 16 programmable fade in and fade out time 0.1 sec to 5.5 sec Choose from linear, square, or cubic rates Fading override I2C-compatible interface for all programming Dedicated reset pin and built-in power-on reset (POR) Short-circuit, overvoltage, and overtemperature protection Internal soft start to limit inrush currents Input-to-output isolation during faults or shutdown Operation down to VIN = 2.5 V with undervoltage lockout (UVLO) at VIN = 2.0 V Available in a small 20-ball, 2.15 mm × 2.36 mm × 0.6 mm WLCSP or a 20-lead, 4 mm × 4 mm × 0.75 mm LFCSP

46 dBm (40 W), 2.7 GHz to 3.5 GHz, GaN Power Amplifier Features: Frequency range: 2.7 GHz to 3.5 GHz POUT: 46 dBm typical with PIN = 21 dBm at 2.7 GHz to 3.1 GHz Power gain: 25 dB typical with PIN = 21 dBm at 2.7 GHz to 3.1 GHz Small signal gain: 34.5 dB typical at 2.7 GHz to 3.1 GHz PAE: 56% typical with PIN = 21 dBm at 2.7 GHz to 3.1 GHz Supply voltage: VDD = 50 V at IDQ = 300 mA with 10% duty cycle 32-lead, 5 mm × 5 mm LFCSP_CAV package

GaAs, pHEMT, MMIC,1/2 W, 20 GHz to 44 GHz, Power Amplifier Features: Output P1dB: 28 dBm (typical at 34 GHz to 44 GHz) PSAT: 30 dBm (typical at 20 GHz to 34 GHz) Gain: 15 dB (typical at 34 GHz to 44 GHz) IP3: 40 dBm (typical) Supply voltage: 5 V at 600 mA Die size: 2.75 mm × 1.805 mm × 0.1 mm

18 GHz to 44 GHz, GaAs, pHEMT, 32 dBm (>1 W), MMIC Power Amplifier Features:ADPA7005AEHZ Output P1dB: up to 31 dBm typical PSAT: up to 32 dBm typical Gain: up to 15.5 dB typical Output IP3: up to 42.5 dBm typical Supply voltage: 5 V at 1400 mA 50 matched input/output 18-terminal, 7 mm × 7 mm LCC_HS package Integrated power detectorADPA7005CHIP Output P1dB: 31 dBm typical at 20 GHz to 34 GHz PSAT: 32 dBm typical at 20 GHz to 34 GHz Gain: 17 dB typical at 20 GHz to 34 GHz Output IP3: 41 dBm typical at 20 GHz to 34 GHz Supply voltage: 5 V at 1200 mA maximum 50 Ω matched input/output Die size: 3.75 mm × 3.47 mm × 0.1 mm

18 GHz to 44 GHz, GaAs, pHEMT, MMIC, 1/2 W Power Amplifier Features: Output P1dB: 29 dBm PSAT: 29.5 dBm Gain: 23.5 dB Output IP3: 38 dBm Supply voltage: 5 V at 800 mA Integrated power detector 50 Ω matched input/output Die size: 2.750 mm × 1.805 mm × 0.102 mm

18 GHz to 44 GHz, GaAs, pHEMT, MMIC, 1/2 W Power Amplifier Features: Output P1dB: 29 dBm PSAT: 29.5 dBm Gain: 23.5 dB Output IP3: 38 dBm Supply voltage: 5 V at 800 mA Integrated power detector 50 Ω matched input/output Die size: 2.750 mm × 1.805 mm × 0.102 mm

18 GHz to 44 GHz, GaAs, pHEMT, MMIC, 1/2 W Power Amplifier Features: Output P1dB: 29 dBm PSAT: 29.5 dBm Gain: 23.5 dB Output IP3: 38 dBm Supply voltage: 5 V at 800 mA Integrated power detector 50 Ω matched input/output Die size: 2.750 mm × 1.805 mm × 0.102 mm

Ultralow Noise, Low Power Current Amplifier Features: Ultralow noise, low power current amplifier 80 fA/√Hz (typical) noise floor 140 μA (typical) of supply current when active (EE = 0 μW/cm2) 100 nA (typical) of supply current in standby Flexible output configuration Optimized for pulsed systems Nominal linear output: 240 μA Space-saving 2 mm × 2 mm LFCSP package