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Texas Instruments TPD4E110DPWEVM

Price $1.98
RoHS Yes Compliant Compliant Not Compliant Not Compliant Compliant Not Compliant Not Compliant
Lead Status Yes No No No No No No No
Offset Drift(Typ)(uV/C) 0.03 0.5 1.7
Iq per channel(Typ)(mA) 0.385 0.35 3.3
Vos (Offset Voltage @ 25C)(Max)(mV) 0.025 0.8 0.75
Operating Temperature Range(C) -40 to 125 -40 to 105,-55 to 125,0 to 70 -55 to 125 -40 to 85
Input Bias Current(Max)(pA) 850 30000
Rating Automotive Catalog Military Catalog
Approx. Price (US$) 1.65 | 1ku 3.90 | 100u 1.20 | 1ku
Output Current(Typ)(mA) 18 25 31
GBW(Typ)(MHz) 2 0.7 6
Architecture CMOS Bipolar Bipolar
Number of Channels(#) 2 4 2
Slew Rate(Typ)(V/us) 0.8 0.4 45
Additional Features EMI Hardened,Zero Drift N/A High Cload Drive
CMRR(Typ)(dB) 114 117 108
CMRR(Min)(dB) 106 97 85
Package Size mm2 mm2 mm2 mm2
Vn at 1kHz(Typ)(nV/rtHz) 8.8 22 10.5
Total Supply Voltage(Max)(+5V=5, +/-5V=10) 36 44 44
Total Supply Voltage(Min)(+5V=5, +/-5V=10) 4 5 4
Iq per channel(Max)(mA) 0.44 0.55 4.4
Package Group VSSOP PDIP,SOIC CDIP,CFP,LCCC,SOIC TSSOP,SOIC
Rail-to-Rail In to V-,Out In to V- In to V-
IIB(Max)(pA) 1500000
Iq(Max)(mA) 7.0
Design Support EVM,Reference Design
Vin(Min)(V) 0.8
IGate Source(Max)(uA) 350
VGS(Max)(V) 11.5
VSense Reverse(Typ)(mV) Adjustable
Vin(Max)(V) 16.5
IGate Source(Typ)(uA) 292
Vabsmin(Min)(V) -0.3
Channel(s) Controlled(#) 1
Vabsmax(Max)(V) 18
IGate Sink(Typ)(mA) 5
Iq(Typ)(mA) 1.2
IGate Pulsed(Typ)(A) 2.35