16-Bit, Isolated, Sigma-Delta Modulator Features: 5 MHz to 21 MHz master clock input frequency Offset drift vs. temperature: ±0.25 μV/°C SNR: 82 dB typical 16 bits, no missing codes Full-scale analog input voltage range: ±64 mV ENOB: 13 bits typical IDD1: 10 mA maximum On-board digital isolator Operating temperature range: −40°C to +125°C High isolation common-mode transient immunity: 150 kV/μs minimum, VDD2 = 3.3 V Wide-body SOICs 16-lead SOIC_W 8-lead SOIC_IC with increased creepage Safety and regulatory approvals UL recognition 5700 V rms for 1 minute per UL 1577 CSA Component Acceptance Notice 5A VDE Certificate of Conformity DIN V VDE V 0884-10: VIORM = 1270 VPEAK DIN V VDE V 0884-11: VIORM = 1060 VPEAK (pending)

200 g Range, 3-Axis Digital Accelerometer Features: ±200 g measurement range Low power: 170 μA in measurement mode and 17 μA in standby mode at VS = 2.5 V (typical) User selectable bandwidth up to 3200 Hz ODR Fixed 13-bit output resolution Supply voltage range: 2.0 V to 3.6 V Embedded memory management system with FIFO technology minimizes host processor load Shock event detection Activity/inactivity monitoring SPI (3- or 4-wire) and I2C digital interfaces Wide temperature range: −40 to +125°C 10,000 g shock survival Pb free and RoHS compliant Small and thin: 32-lead, 5 mm × 5 mm × 1.45 mm LFCSP AEC-Q100 qualified for automotive applications

Small, Low Power, 3-Axis 5 g Accelerometer Features:3-axis sensingSmall, low profile package4 mm 4 mm 1.45 mm LFCSPLow power: 350 A typicalSingle-supply operation: 1.8 V to 3.6 V10,000 g shock survivalExcellent temperature stabilityBandwidth adjustment with a single capacitor per axisRoHS/WEEE lead-free compliant

3-Axis, 200 g Digital MEMS Accelerometer Features: Low power: as low as 35 µA in measurement mode and 0.1 µA in standby mode at VS = 2.5 V (typical) Power consumption scales automatically with bandwidth Embedded, 32-level FIFO buffer minimizes processor load Bandwidth of up to 1 kHz Bandwidth selectable via serial command Shock event detection Activity/inactivity monitoring Supply voltage range: 2.0 V to 3.6 V I/O voltage range: 1.7 V to VS SPI (3- or 4-wire) and I2C digital interfaces Wide temperature range: −40°C to +85°C 10,000 g shock survival Pb free/RoHS compliant Small and thin: 3 mm × 5 mm × 1 mm LGA packageADXL375-EP supports defense and aerospace applications (AQEC standard)Download ADXL375-EP Data Sheet (pdf)Extended industrial temperature range: −55°C to +105°CControlled manufacturing baseline1 assembly/test site1 fabrication siteProduct change notificationQualification data available on requestV62/ 18612 DSCC Drawing Number

Configurable, Dual 2 A/Single 4 A, Synchronous Step-Down DC-to-DC Regulator Features: Configurable 3 A/1 A or 2 A/2 A dual output load combinations or 4 A combined single output High efficiency: up to 95% Input voltage VIN: 2.75 V to 5.5 V Selectable fixed output: 0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V or adjustable output voltage to 0.6 V minimum ±1.5% accuracy reference voltage Selectable fixed switching frequency: 300 kHz, 600 kHz, or 1.2 MHz Optimized gate slew rate for reduced EMI External synchronization or internal clock output Dual-phase, 180° shifted PWM channels Current mode for fast transient response, no current sense resistor required Pulse-skip under light load or forced PWM operation See data sheet for additonal features

20 V, 6 A, Synchronous, Step-Down DC-to-DC Regulator Features: Input voltage range: 4.5 V to 20 V Integrated MOSFET: 44 mΩ typical/11 mΩ typical Reference voltage: 0.6 V ± 1% Continuous output current: 6 A Programmable current-limit thresholdProgrammable switching frequency: 200 kHz to 1400 kHz Precision enable and power good External compensation Internal soft start with external adjustable option Startup into a precharged output Supported by ADIsimPower design tool

18 V, 12 A Step-Down Regulator with Programmable Current Limit Features: Input voltage: 4.5 V to 18 V Continuous output current: 12 A Integrated MOSFETs: 17 mΩ high-side/4.5 mΩ low-side 0.6 V ± 0.5% reference voltage Programmable switching frequency range: 200 kHz to 2200 kHz Enhanced transient response Programmable current limit with ±10% accuracy Precision enable and power good External compensation and soft start Start up into a precharged output Supported by the ADIsimPower design tool

40 V, 200 mA, Low Noise, CMOS LDO Linear Regulator Features: Low noise: 11 μV rms independent of fixed output voltage PSRR of 88 dB at 10 kHz, 68 dB at 100 kHz, 50 dB at 1 MHz, VOUT ≤ 5 V, VIN = 7 V Input voltage range: 2.7 V to 40 V Maximum output current: 200 mA Initial accuracy: ±0.8% Accuracy over line, load, and temperature −1.2% to +1.5%, TJ = −40°C to +85°C ±1.8%, TJ = −40°C to +125°C Low dropout voltage: 200 mV (typical) at a 200 mA load, VOUT = 5 V User programmable soft start (LFCSP and SOIC only) Low quiescent current, IGND = 50 μA (typical) with no load Low shutdown current: 1.8 μA at VIN = 6 V, 3.0 μA at VIN = 40 V Stable with a small 2.2 μF ceramic output capacitor Fixed output voltage options: 1.8 V, 2.5 V, 3.3 V, 3.8 V, and 5.0 V 15 standard voltages between 1.2 V and 5.0 V are available Adjustable output from 1.2 V to VIN – VDO, output can be adjusted above initial set point Precision enable 2 mm × 2 mm, 6-lead LFCSP, 8-Lead SOIC, 5-Lead TSOT AEC-Q100 qualified for automotive applications

18 GHz to 44 GHz, GaAs, pHEMT, MMIC, 1/2 W Power Amplifier Features: Output P1dB: 29 dBm PSAT: 29.5 dBm Gain: 23.5 dB Output IP3: 38 dBm Supply voltage: 5 V at 800 mA Integrated power detector 50 Ω matched input/output Die size: 2.750 mm × 1.805 mm × 0.102 mm

18 GHz to 44 GHz, GaAs, pHEMT, MMIC, 1/2 W Power Amplifier Features: Output P1dB: 29 dBm PSAT: 29.5 dBm Gain: 23.5 dB Output IP3: 38 dBm Supply voltage: 5 V at 800 mA Integrated power detector 50 Ω matched input/output Die size: 2.750 mm × 1.805 mm × 0.102 mm