4-Channel, 24 GHz, Receiver Downconverter Features: Integrated baluns for single-ended receiver (Rx) inputs and local oscillator (LO) input Rx channel gain: 22 dB Noise figure (NF): 10 dB P1dB: −10 dBm LO input range: −8 dBm to +5 dBm Rx to IF isolation: 30 dB RF signal bandwidth: 250 MHz Rx output impedance: 900 Ω differential LO input buffer: 24 GHz RF and LO S11 at 50 Ω: −5 dB Temperature sensor with analog output: ±5° Electrostatic discharge (ESD) performance Human body model (HBM): 2000 V Charged device model (CDM): 500 V Qualified for automotive applications

Low Capacitance, Low Charge Injection, 15 V/+12 V iCMOS Quad SPST Switch Features: 1 pF off capacitance 2.6 pF on capacitance <1 pC charge injection 33 V supply range 120 Ω on resistance Fully specified at ±15 V, +12 V No VL supply required 3 V logic-compatible inputs Rail-to-rail operation 16-lead TSSOP and 16-lead LFCSP Typical power consumption: <0.03 μW

LC2MOS 15 V 4 Channel High Performance Analog Multiplexer Features: 44 V supply maximum ratings VSS to VDD analog signal range Low on resistance (100 Ω maximum) Low power (ISUPPLY < 75 µA) Fast switching Break-before-make switching action Plug-in replacement for DG408

High Voltage, Latch-Up Proof, 8-Channel Differential Multiplexer Features: Latch-up proof 3.5 pF off source capacitance 33 pF off drain capacitance 0.35 pC typical charge injection ±0.02 nA on channel leakage Low on resistance: 155 typical ±9 V to ±22 V dual-supply operation 9 V to 40 V single-supply operation VSS to VDD analog signal range Human body model (HBM) ESD rating - 8 kV I/O port to supplies

Fault Protection, 6 RON, SPST Switch with 0.6 k Feedback Channel Features: Analog output protection and detection solution Overvoltage protection up to 60 V on S and SFB pins Power off protection up to 60 V on S and SFB pins Integrated 0.6 k secondary feedback channel Known output under all conditions User enabled, power-on condition pulls source to 0 V Known state without digital inputs present Latch-up immune Optimized resistance for measurement channel and feedback channel Low on resistance of 6 typical on signal channel Ultraflat, on resistance on signal channel 3 mm 2 mm LFCS VSS to VDD 2 V signal range Fully specified at ±15 V, ±20 V, +12 V, and +36 V ±5 V to ±22 V dual supply operation 8 V to 44 V single-supply operation

CMOS, 2.5 Low Voltage Differential 8 Channel Multiplexer Features: +1.8 V to +5.5 V single supply ±2.5 V dual supply 2.5 ON resistance 0.5 ON resistance flatness 100 pA leakage currents 40 ns switching times Differential 8-to-1 multiplexer 28-lead TSSOP package Low-power consumption TTL/CMOS-compatible inputs

Low Voltage, 300 MHz Quad 2:1 Mux Analog HDTV Audio/Video Switch Features: Bandwidth: 300 MHz Low Insertion Loss and on Resistance: 5 typical On Resistance Flatness: 0.68 Typical Single 3 V/5 V Supply Operation Low Quiescent Supply Current: 1 nA Typical TTL/CMOS Compatible Fast switching times: tON, 7 ns; tOFF, 5 ns ESD protection 2 kV human body model (HBM) 200 V machine model (MM) 1 kV field-induced charged device model (FICDM)

Wideband, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT Switches Features: Wideband switch: −3 dB at 4 GHz Absorptive/reflective switches High off isolation (43 dB at 1 GHz) Low insertion loss (0.8 dB at 1 GHz) Single 1.65 V to 2.75 V power supply CMOS/LVTTL control logic 8-lead MSOP and tiny 3 mm × 3 mm LFCSP Low power consumption (<1 µA)

0 Hz/DC to 34 GHz, SPDT MEMS Switches Features: ADGM1001: DC to 34 GHz Insertion loss 0.8 dB (typical) at 18 GHz 1.5 dB (typical) at 34 GHz IIP3: 76 dBm (typical) Maximum RF power: 33 dBm On resistance: 3.4 Ω (typical) Maximum dc current: 200 mA Actuation lifetime: 100 million cycles (minimum) On switching time (tON): 200 μs (typical) Integrated 3.3 V driver for simple control with parallel and SPI Independently controllable switches Space-saving integrated passive components Small, 5.00 mm × 4.00 mm × 0.90 mm, 24-lead LGA package Temperature range: –40°C to +85°C

0 Hz/DC to 16 GHz, SPDT MEMS Switches Features: ADGM1003: DC to 16 GHz Insertion loss 0.5 dB (typical) at 6 GHz 0.7 dB (typical) at 16 GHz Maximum RF power: 27 dBm On resistance: 3.4 Ω (typical) Maximum dc current: 75 mA Actuation lifetime: 100 million cycles (Typical) On switching time (tON): 200 μs (typical) Integrated 3.3 V driver for simple control with parallel and SPI Independently controllable switches Space-saving integrated passive components Small, 5.00 mm × 4.00 mm × 0.90 mm, 24-lead LGA package Temperature range: –40°C to +85°C