The ADL5501 is a mean-responding power detector for use in high frequency receiver and transmitter signal chains from 50 MHz to 6 GHz. It is easy to apply, requiring only a single supply between 2.7 V and 5.5 V and a power supply decoupling capacitor. The input is internally ac-coupled and has a nominal input impedance of 50 ?. The output is a linear-responding dc voltage with a conversion gain of 6.3 V/V rms at 900 MHz.The ADL5501 is intended for true power measurement of simple and complex waveforms. The device is particularly useful for measuring high crest factor (high peak-to-rms ratio) signals, such as CDMA-, CDMA2000-, W-CDMA-, and QPSK-/QAM-based OFDM waveforms. The on-chip modulation filter provides adequate averaging for most waveforms.The on-chip, 100 ? series resistance at the output, combined with an external shunt capacitor, creates a low-pass filter response that reduces the residual ripple in the dc output voltage. For more complex waveforms, an external capacitor at the FLTR pin can be used for supplementary signal demodulation.The ADL5501 offers excellent temperature stability across a 30 dB range and near 0 dB measurement error across temperature over the top portion of the dynamic range. In addition to its temperature stability, the ADL5501 offers low process variations that further reduce calibration complexity.The ADL5501 operates from ?40?C to +85?C and is available in a small 6-lead SC-70 package. It is fabricated on a proprietary high fT silicon bipolar process.ApplicationsMeasurement of CDMA-, CDMA2000-, W-CDMA-, and QPSK-/ QAM-based OFDM, and other complex modulationwaveforms RF transmitter or receiver power measurement

The ADL5545 is a single-ended RF/IF gain block amplifier that provides broadband operation from 30 MHz to 6 GHz. The ADL5545 provides over 36 dBm of OIP3 using only 56 mA from a 5 V supply.The ADL5545 provides a gain of 24 dB, which is stable over frequency, temperature, power supply, and from device to device. The amplifier is offered in the industry-standard SOT-89 package and is internally matched to 50 ? at the input and output, making the ADL5545 very easy to implement in a wide variety of applications. The only external components required are the input/output ac coupling capacitors, power supply decoupling capacitors, and dc bias inductor.The ADL5545 is fabricated on an InGaP HBT process and has a high ESD rating of ?1.5 kV (Class 1C). The ADL5545 is also fully specified for operation across the wide temperature range of ?40?C to +105?C. A fully populated RoHS-compliant evaluation board is available.

The ADL5605 is a broadband, two-stage, 1 W RF driver amplifier that operates over a frequency range of 700 MHz to 1000 MHz.The ADL5605 operates on a 5 V supply voltage and a supply current of 307 mA. The driver also incorporates a fast power-up/power-down function for TDD applications, applications that require a power saving mode, and applications that intermittently transmit data.The ADL5605 is fabricated on a GaAs HBT process and is packaged in a compact 4 mm ? 4 mm, 16-lead LFCSP that uses an exposed paddle for excellent thermal impedance. The ADL5605 operates from ?40?C to +85?C. A fully populated evaluation board tuned to 943 MHz is also available.ApplicationsWireless infrastructureAutomated test equipmentISM/AMR applications

The ADL5920 is an ultrawideband, bidirectional detector that simultaneously measures forward and reverse rms power levels in a signal path, along with the return loss.The forward and reverse power traveling through the integrated bidirectional bridge is measured using two 50 dB linear in dB rms detectors. The detector output voltages, available at the VRMSF and VRMSR pins, are proportional to the forward and reflected power in dBm. A third, differential, output produces a voltage proportional to the return loss (reflection coefficient) in dB, closely related to the voltage standing wave ratio (VSWR). The common-mode level of this output is externally adjustable through the VOCM pin.The primary transmission line of the bidirectional bridge, from RFIN to RFOUT (or vice versa) is dc-coupled and allows small amounts of dc bias current through the bridge. When dc-coupled to source and load, the positive and negative supply pins of the ADL5920 must be connected to +5 V and ?2.5 V, respectively (relative to the dc voltage at RFIN and RFOUT). The internal detector circuitry is also dc-coupled to the directional bridge to support measurements down to 9 kHz.The maximum input signal on each of the RF ports (RFIN and RFOOUT) is 30 dBm for open and shorted terminations and 33 dBm for a matched termination.The ADL5920 draws 160 mA from a 5 V supply and has a low power, power-down mode controlled through the PWDN/TADJS pin.The device is supplied in a 32-lead, 5 mm ? 5 mm LFCSP and is specified for ambient operating temperatures in the ?40?C to +85?C range.Multifunction pin names may be referenced by their relevant function only.Applications Industrial metering Broadband inline power and return loss measurement Transmit power control and automatic level control in wireless transmitters, signal generators, network analyzers, and wireless communications testers Condition based monitoring of system modules, cables, and connectors

The ADL6010 is a versatile, broadband envelope detector covering the microwave spectrum. It provides state-of-the-art accuracy with very low power consumption (8 mW) in a simple, easy to use 6-lead format. The output is a baseband voltage proportional to the instantaneous amplitude of the radio frequency (RF) input signal. It exhibits minimal slope variation of the RF input to envelope output transfer function from 0.5 GHz to 43.5 GHz.The detector cell uses a proprietary eight Schottky diode array followed by a novel linearizer circuit that creates a linear voltmeter with an overall scaling factor (or transfer gain) of nominally ?2.2 relative to the voltage amplitude of the input.Although the ADL6010 is not inherently a power responding device, it remains convenient to specify the input in this way. Thus, the permissible input power, relative to a 50 ? source input impedance, ranges from ?30 dBm to +15 dBm. The corresponding input voltage amplitudes of 11.2 mV to 1.8 V generate quasi-dc outputs from about 25 mV to 4 V above common (COMM).A subtle aspect of the balanced detector topology is that no even-order distortion, caused by nonlinear source loading, occurs at the input. This is an important benefit in applications where a low ratio coupler is used to extract a signal sample and is a significant improvement over traditional diode detectors.The power equivalent of a fluctuating RF input amplitude can be extracted by the addition of an rms-to-dc converter IC. Alternatively, the baseband output can be applied to a suitably fast analog-to-digital converter (ADC) and the rms value (and other signal metrics, such as peak to average ratio) calculated in the digital domain.The output response accuracy is insensitive to variation in the supply voltage, which can range from 4.75 V to 5.25 V. The ultralow power dissipation contributes to its long-term stability.The ADL6010ACPZN is specified for operation from ?40?C to +85?C, and the ADL6010SCPZN is specified for operation from ?55?C to +125?C. Both are available in a 6-lead, 2 mm ? 2 mm LFCSP package.Applications Microwave point to point links Microwave instrumentation Radar-based measurement systems

The ADL6317 is a transmit variable gain amplifier (VGA) that provides an interface from radio frequency digital-to-analog converters (RF DACs), transceivers, and systems on a chip (SoC) to power amplifiers. Integrated balun and hybrid couplers allow high performance RF capability in the frequency range of 1500 MHz to 3000 MHz.To optimize performance vs. power level, the ADL6317 includes a voltage variable attenuator (VVA), high linearity amplifiers, and a digital step attenuator (DSA). All of the devices integrated into the ADL6317 are programmable via a 4-wire serial port interface (SPI).The ADL6317 is manufactured on an advanced silicon germanium (SiGe), bipolar complementary metal oxide semiconductor (BiCMOS) process.Applications 2G/3G/4G/long-term evolution (LTE) in FDD/TDD broadband communication systems