High-Side or Low-Side Gate Driver IC Non-Inverting 8-PDIP

IGBT Trench 600 V 8 A 56 W Through Hole TO-220AB

IGBT 430 V 20 A 125 W Surface Mount TO-263AB

IGBT 600 V 100 A 330 W Through Hole TO-247AC

IGBT Trench 600 V 20 A 101 W Through Hole TO-220AB

MOSFET, DUAL NP LOGIC MICRO-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.135ohm; Rds(on) Test Voltage Vgs:2.7V; Threshold Voltage Vgs:-; Power Dissipation Pd:1.25W; Transistor Case Style:µSOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Cont Current Id N Channel 2:2.4A; Cont Current Id P Channel:1.7A; Continuous Drain Current Id, N Channel:2.4A; Continuous Drain Current Id, P Channel:-1.7A; Current Temperature:25°C; Drain Source Voltage Vds, N Channel:20V; Drain Source Voltage Vds, P Channel:-20V; Full Power Rating Temperature:25°C; No. of Transistors:2; On Resistance Rds(on), N Channel:0.12ohm; On Resistance Rds(on), P Channel:0.28ohm; On State Resistance N Channel Max:135mohm; On State Resistance P Channel Max:270mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:14A; Pulse Current Idm N Channel 2:19A

Single N-Channel 100 V 0.055 Ohm 125 nC 150 W SMT Hexfet Transistor TO-3

JANTX2N6758 Series 200 V 490 mOhm 75 W Through Hole Hexfet Transistor - TO-3

SINGLE IGBT 1.2KV 40A; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):1.2kV; Power Dissipation Pd:300W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:3; Operating Temperature Max:150°C; MSL:- ;RoHS Compliant: No

HEXFET HiRel Gen 5 QIRL