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SN74LV393ANSRG4
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SN74BCT640DWG4
|
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TLC59283DBQ
|
Price |
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$2.05 |
$0.37 |
$3.63 |
|
$1.08 |
RoHS |
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Compliant |
Compliant |
Compliant |
Compliant |
Yes |
Compliant |
Compliant |
Yes |
Lead Status |
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No |
No |
No |
No |
Yes |
No |
No |
Yes |
VIL(Max)(V) |
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0.8 |
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VCC(Max)(V) |
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3.6 |
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Ron(Typ)(Ohms) |
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4 |
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Turn on Time (Enable)(Max)(ns) |
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0.5 |
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Package Size |
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mm2 |
mm2 |
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mm2 |
mm2 |
mm2 |
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mm2 |
ESD Charged Device Model(kV) |
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4 |
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VCC(Min)(V) |
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3 |
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ESD HBM(Typ)(kV) |
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6 |
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Operating Temperature Range(C) |
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-40 to 85 |
-40 to 85 |
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-40 to 85,0 to 70 |
0 to 70 |
-40 to 125 |
-40 to 85 |
-40 to 85 |
Bandwidth(MHz) |
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600 |
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Bandwidth(Max)(MHz) |
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600 |
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Additional Features |
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Low power stand by mode,Ioff Protection,10 BASE-T,100 BASE-T,1000 BASE-T,LVDS |
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N/A |
N/A |
Shutdown |
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Input/Output Continuous Current(Max)(mA) |
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128 |
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Package Group |
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WQFN |
SOIC |
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PDIP,SOIC |
PDIP,SO,SOIC,TSSOP |
SOIC,VSSOP |
PDIP,SOIC |
SSOP,VQFN |
Propagation Delay(ns) |
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0.3 |
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ICC(Max)(uA) |
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600 |
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Input/Output OFF-state Capacitance(Typ)(pF) |
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3 |
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Approx. Price (US$) |
|
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|
0.90 | 1ku |
1.73 | 1ku |
|
1.00 | 1ku |
0.22 | 1ku |
2.70 | 1ku |
1.55 | 1ku |
0.43 | 1ku |
Input/Ouput Voltage(Min)(V) |
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0 |
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ICC(Typ)(uA) |
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250 |
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RON Flatness(Typ)(Ohms) |
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0.7 |
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Input/Output ON-state Capacitance(Typ)(pF) |
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9 |
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Ron Channel Match(Max)() |
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1.5 |
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Number of Channels(#) |
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8 |
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2 |
4 |
2 |
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Input/Ouput Voltage(Max)(V) |
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3.6 |
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Ron(Max)(Ohms) |
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8 |
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Configuration |
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1 |
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Turn off Time (Disable)(Max)(ns) |
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0.9 |
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VIH(Min)(V) |
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2 |
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OFF-state leakage current(Max)(A) |
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1 |
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Rating |
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Catalog |
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Catalog |
Catalog |
Catalog |
Catalog |
Catalog |
Status Output |
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SD\FLT |
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Current Limit Function Enabled |
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Always |
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Fault Response |
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Auto Retry |
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Channel(s) Controlled(#) |
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1 |
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ON_OFF Control Input(s) |
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SD\FLT |
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Current Limit Accuracy |
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+/- 15% @ 100 mV,+/- 7.5% @ 400 mV |
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Current Measurement Accuracy(%) |
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N/A |
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Vabsmax_cont(V) |
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-9999 |
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Current Limit Threshold(Typ)(Ext FET=mV) |
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Adjustable |
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Vin(Max)(V) |
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-10.5 |
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Vin(Min)(V) |
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-9999 |
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Special Features |
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Ultra High Voltage |
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N/A |
Iq per channel(Typ)(mA) |
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0.312 |
0.7 |
1.8 |
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Vn at 1kHz(Typ)(nV/rtHz) |
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40 |
0 |
5.1 |
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Slew Rate(Typ)(V/us) |
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3.4 |
0.6 |
20 |
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Output Current(Typ)(mA) |
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45 |
30 |
30 |
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CMRR(Typ)(dB) |
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90 |
90 |
140 |
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CMRR(Min)(dB) |
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72 |
70 |
126 |
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Vos (Offset Voltage @ 25C)(Max)(mV) |
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2 |
8 |
0.12 |
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Architecture |
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FET |
Bipolar |
FET |
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GBW(Typ)(MHz) |
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2 |
1 |
11 |
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Iq per channel(Max)(mA) |
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0.345 |
1.75 |
2 |
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Input Bias Current(Max)(pA) |
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60 |
500000 |
10 |
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Offset Drift(Typ)(uV/C) |
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6 |
10 |
0.35 |
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Total Supply Voltage(Min)(+5V=5, +/-5V=10) |
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7 |
5 |
4.5 |
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Total Supply Voltage(Max)(+5V=5, +/-5V=10) |
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36 |
30 |
36 |
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Rail-to-Rail |
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In to V+ |
In to V- |
In to V-,Out |
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Fault Protection(V) |
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-9 to 14 |
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Supply Voltage(s)(Nom)(V) |
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5 |
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Estimated Package Size (WxL)(mm2) |
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[pf]8SOIC[/pf] |
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Duplex |
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Half |
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Common Mode Range |
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-7 to 12 |
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HBM ESD(kV) |
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16 |
|
ICC(Max)(mA) |
|
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15 |
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Isolated |
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No |
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Fail Safe |
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Idle, Open, Short |
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Number of Nodes |
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256 |
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Signaling Rate(Max)(Mbps) |
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10 |
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No. of TX |
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1 |
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No. of RX |
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1 |
|
Ch to Ch Accuracy(Typ)(+/- %) |
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1 |
Data Transfer Rate(Typ)(MHz) |
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35 |